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    Plasma-assisted sintering
    25.
    发明申请
    Plasma-assisted sintering 审中-公开
    等离子体辅助烧结

    公开(公告)号：US20060057016A1

    公开(公告)日：2006-03-16

    申请号：US10513305

    申请日：2003-05-07

    Applicant: Devendra Kumar ,  Satyendra Kumar

    Inventor： Devendra Kumar ,  Satyendra Kumar

    IPC: B22F3/105

    CPC classification number: C23C4/134 ,  B22F3/105 ,  B22F2999/00 ,  B82Y30/00 ,  C04B35/64 ,  C04B2235/666 ,  C23C26/00 ,  H05H1/46 ,  H05H2001/4607 ,  B22F2202/13

    Abstract: Methods and systems for plasma-assisted sintering are provided. The method can include initiating a sintering plasma with a cavity (12) by subjecting a gas to radiation in the presence of a plasma catalyst and exposing at least a portion of an object which can be a powdered material component to the plasma for a period of time sufficient to sinter at least a portion of the object.

    Abstract translation: 提供等离子体辅助烧结的方法和系统。 该方法可以包括通过在等离子体催化剂的存在下对气体进行辐射来引发具有空腔（12）的烧结等离子体，并将至少一部分可以是粉末材料成分的物体暴露于等离子体一段时间 足以烧结物体的至少一部分的时间。

    Method for manufacturing semiconductor device having porous structure with air-gaps
    26.
    发明授权
    Method for manufacturing semiconductor device having porous structure with air-gaps 有权
    具有空隙的具有多孔结构的半导体器件的制造方法

    公开(公告)号：US06949456B2

    公开(公告)日：2005-09-27

    申请号：US10693200

    申请日：2003-10-24

    Applicant: Devendra Kumar

    Inventor： Devendra Kumar

    IPC: H01L23/522 ,  H01L21/768 ,  H01L21/4763

    CPC classification number: H01L21/76835 ,  H01L21/76807 ,  H01L21/7682

    Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

    Abstract translation: 半导体器件的制造方法包括：（i）在其上形成有电路的基板上沉积由诸如苯并环丁烯的有机聚合物制成的牺牲层; （ii）蚀刻除了要形成气隙的部分之外的牺牲层; （iii）在所述衬底上沉积低介电层，直到所述空隙部分完全封闭在所述低电介质层中; （iv）蚀刻低电介质层以在其上形成通孔和沟槽; （v）在步骤（iv）之前或之后，除去气隙部分; 和（vi）在通孔和沟槽中沉积铜，所述通孔和沟槽填充有与基底表面接触的铜。

    Analysis of radiofrequency discharges in plasma
    28.
    发明授权
    Analysis of radiofrequency discharges in plasma 失效
    血浆射频放电分析

    公开(公告)号：US5135604A

    公开(公告)日：1992-08-04

    申请号：US621784

    申请日：1990-12-04

    Applicant: Devendra Kumar ,  Sean P. McGlynn

    Inventor： Devendra Kumar ,  Sean P. McGlynn

    IPC: G01N27/62

    CPC classification number: G01N27/628

    Abstract: Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition.

    Abstract translation: 将等离子体中的激光光电信号分离成两部分：（1）电离速率变化分量，和（2）光声介质成分。 即使当两个部件在时间上重叠时，也可以通过在rf放电等离子体中测量时间分辨的激光光电信号，随着rf频率在等离子体和相关联的驱动/检测电路的电共振峰附近变化而进行。 可以构造新的光谱仪来进行这些测量。 这种光谱仪将有助于更好地理解和控制诸如等离子体蚀刻和等离子体沉积之类的工艺。

    Aminophenoxycyclotriphosphazene cured epoxy resins and the composites, laminates, adhesives and structures thereof
    29.
    发明授权
    Aminophenoxycyclotriphosphazene cured epoxy resins and the composites, laminates, adhesives and structures thereof 失效
    氨基苯氧基环三磷腈固化环氧树脂及其复合材料，层压材料，粘合剂及其结构

    公开(公告)号：US4668589A

    公开(公告)日：1987-05-26

    申请号：US806572

    申请日：1985-11-21

    Applicant: Devendra Kumar ,  George M. Fohlen ,  John A. Parker

    Inventor： Devendra Kumar ,  George M. Fohlen ,  John A. Parker

    IPC: C07F9/6593 ,  C08G59/50 ,  C08G79/02

    CPC classification number: C07F9/65815 ,  C08G59/5046 ,  Y10T428/31511 ,  Y10T428/31525

    Abstract: Aminophenoxycyclotriphosphazenes such as hexakis(4-aminophenoxy)cyclotriphosphazene and tris(4-aminophenoxy)-tris phenoxyclyclotriphosphazene are used as curing agents for epoxy resins. These 1,2-epoxy resins are selected from di- or polyepoxide-containing organic moieties of the formula (CH.sub.2 --CHO--CH.sub.2).sub.m --W--R--W--(CH.sub.2 CH--CH.sub.2 O).sub.m where R is diphenyldimethylmethane, diphenylmethane, bis(dibromophenyl)dimethylmethane, or ##STR1## W is a nitrogen or oxygen atom; and m is 1 when W is oxygen and 2 when W is nitrogen. The resins are cured thermally in stages at between about 110.degree. to 135.degree. C. for between about 1 and 10 min, then at between about 175.degree. to 185.degree. C. for between about 0.5 to 10 hr and post-cured at between about 215.degree. and 235.degree. C. for between abut 0.1 and 2 hr. These resins are useful for making fire-resistant elevated temperature stable composites, laminates (e.g. graphite fiber or fiberglass), molded parts, and adhesives and structures, usually for aircraft secondary structures and for spacecraft construction.

    Abstract translation: 使用氨基苯氧基环三磷腈如六（4-氨基苯氧基）环三磷腈和三（4-氨基苯氧基） - 三苯氧基氯三磷腈为环氧树脂的固化剂。 这些1,2-环氧树脂选自式（CH2-CHO-CH2）mWRW-（CH2CH-CH2O）m的二元或多环氧化物的有机部分，其中R是二苯基二甲基甲烷，二苯基甲烷，双（二溴苯基）二甲基甲烷或 W是氮或氧原子; 当W为氧时，m为1，W为氮时m为2。 树脂在约110至135℃之间分段固化约1至10分钟，然后在约175至185℃之间约0.5至10小时并在约 215℃和235℃之间约0.1和2小时。 这些树脂可用于制备耐火高温稳定复合材料，层压材料（例如石墨纤维或玻璃纤维），模制零件，以及通常用于飞机二级结构和航天器结构的粘合剂和结构。

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