Abstract:
Provided are a waveguide with a reduced phase error and a photonics device including the same. The waveguide structure may include a lower clad, a core pattern with at least one bending region, on the lower clad, a beam deflecting pattern on the core pattern, and an upper clad covering the core pattern provided with the beam deflecting pattern. The beam deflecting pattern may be formed of a material, whose refractive index may be higher than that of the upper clad and may be lower than or equivalent to that of the core pattern, and the beam deflecting pattern has an increasing and decreasing width or an oscillating width, when measured along the bending region.
Abstract:
An optical filter of the inventive concept includes a slab waveguide disposed on a substrate, an input guide gate and an output guide gate spaced apart from each other in the slab waveguide, and an echelle grating filter disposed in the slab waveguide. The echelle grating filter has curvature and extends in a first direction. The echelle grating filter has gratings of sawtooth shape on one surface thereof. Light inputted through the input guide gate is totally reflected at the echelle grating filter by one reflecting process.
Abstract:
Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
Abstract:
Provided is an optical switch including a substrate, a first optical waveguide disposed on the substrate and having a conductive portion disposed on one surface thereof, and a second optical waveguide disposed on the substrate being spaced apart from the first optical waveguide and having an electrode portion disposed on one surface thereof. The electrode portion and the conductive portion face each other. The electrode portion controls an optical field between the first optical waveguide and the second optical waveguide.
Abstract:
Provided is a thermo-optic optical switch including an input waveguide configured to receive an optical signal, an output waveguide configured to output the optical signal, branch waveguides branching from the input waveguide to be connected to the output waveguide, and heater electrodes disposed on the branch waveguides and configured to heat the branch waveguides, wherein the branch waveguides includes first and second phase shifters having first and second thermo-optic coefficients of opposite signs.
Abstract:
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device according to an embodiment of the inventive concept includes a first semiconductor chip having a recess portion in one surface thereof; a first adhesion pattern filled within the recess portion of the first semiconductor chip; and a second semiconductor chip disposed on the first adhesion pattern. The second semiconductor chip may represent improved heat dissipation characteristics.
Abstract:
Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
Abstract:
Provided is a wavelength combiner including a slab waveguide; an output waveguide extended from the slab waveguide in a first direction; and at least one rib waveguide disposed at an interval horizontally from the output waveguide and extended from the slab waveguide in the first direction, wherein the rib waveguide is tapered in the first direction.
Abstract:
Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract:
An interface circuit configured to transmit and receive signals between electronic devices is provided. The interface circuit includes an optical connection protocol manager configured to serialize a parallel transmission packet electrical signal generated based on output data to generate a serialized transmission packet electrical signal, parallelize a serial reception packet electrical signal to generate a parallelized reception packet electrical signal, and parse the parallelized reception packet electrical signal according to whether there is an error in the parallelized reception packet electrical signal to generate input data; and an electro-optical converter configured to convert the serialized transmission packet electrical signal into a transmission packet optical signal to output the transmission packet optical signal, receive a reception packet optical signal, and convert the reception packet optical signal into the serial reception packet electrical signal to provide the serial reception packet electrical signal to the optical connection protocol manager.