公开(公告)号：US4181544A

公开(公告)日：1980-01-01

申请号：US956066

申请日：1978-10-30

申请人： Alfred Y. Cho

发明人： Alfred Y. Cho

IPC分类号： C23C14/54 ,  C23C14/56 ,  C30B23/06 ,  H01L21/203 ,  C23C13/08

CPC分类号： C23C14/56 ,  C23C14/541 ,  C30B23/063 ,  Y10S148/006 ,  Y10S148/169

摘要： Apparatus for molecular beam deposition sequentially on a plurality of substrates is described. The apparatus includes a growth chamber and an auxiliary (sample-exchange) chamber coupled by an air-lock. The substrates are carried by a rod which can be translated via a bellows mechanism between the two chambers. The auxiliary chamber includes a port which permits access to the samples so that the entire rod-bellows mechanism need not be removed in order to change samples. The auxiliary chamber also includes means for maintaining therein an inert atmosphere at a pressure in excess of atmospheric pressure especially when the port is open. The growth chamber includes a cylindrical liquid nitrogen (LN.sub.2) shroud which has an aperture in its wall to admit molecular beams to only a heated (growth) substrate. The unheated (idle) substrates are thus shaded from the beams. In addition, the shroud surrounds both the growth substrate and idle substrates in the growth chamber. This configuration of the shroud reduces the likelihood of contamination of idle substrates. In addition, the growth chamber includes means for selectively heating the growth substrate, the idle substrates remaining unheated so as to reduce the evaporation of high vapor pressure elements therefrom.Another aspect of the invention is the provision of uniquely designed pyrolytic BN effusion cells for generating the various molecular beams.

摘要翻译： 描述了在多个基板上顺序分子束沉积的装置。 该装置包括通过空气锁耦合的生长室和辅助（取样器 - 交换）室。 基板由杆组成，杆可通过两个腔室之间的波纹管机构平移。 辅助室包括允许进入样品的端口，使得整个杆 - 波纹管机构不需要被移除以便改变样品。 辅助室还包括用于在其中保持超过大气压力的压力的惰性气氛的装置，特别是当端口打开时。 生长室包括圆柱形液氮（LN2）护罩，其在其壁上具有孔，以将分子束仅允许加热（生长）基底。 因此，未加热（空闲）基板由梁遮蔽。 此外，护罩围绕生长衬底和生长室中的空闲衬底。 护罩的这种构造减少了空闲基板的污染的可能性。 此外，生长室包括用于选择性地加热生长衬底的装置，空闲衬底保持不加热，从而减少高蒸气压元件的蒸发。 本发明的另一方面是提供独特设计的热解BN渗流池用于产生各种分子束。

公开(公告)号：US4137865A

公开(公告)日：1979-02-06

申请号：US755663

申请日：1976-12-30

申请人： Alfred Y. Cho

发明人： Alfred Y. Cho

IPC分类号： C23C14/54 ,  C23C14/56 ,  C30B23/02 ,  C23C13/08

CPC分类号： C30B23/02 ,  C23C14/541 ,  C23C14/56

摘要： Apparatus for molecular beam deposition sequentially on a plurality of substrates is described. The apparatus includes a growth chamber and an auxiliary (sample-exchange) chamber coupled by an air-lock. The substrates are carried by a rod which can be translated via a bellows mechanism between the two chambers. The auxiliary chamber includes a port which permits access to the samples so that the entire rod-bellows mechanism need not be removed in order to change samples. The auxiliary chamber also includes means for maintaining therein an inert atmosphere at a pressure in excess of atmospheric pressure especially when the port is open. The growth chamber includes a cylindrical LN.sub.2 shroud which has an aperture in its wall to admit molecular beams to only a heated (growth) substrate. The unheated (idle) substrates are thus shaded from the beams. In addition, the shroud surrounds both the growth substrate and idle substrates in the growth chamber. This configuration of the shroud reduces the likelihood of contamination of idle substrates. In addition, the growth chamber includes means for selectively heating the growth substrate, the idle substrates remaining unheated so as to reduce the evaporation of high vapor pressure elements therefrom.Another aspect of the invention is the provision of uniquely designed pyrolytic BN effusion cells for generating the various molecular beams.

摘要翻译： 描述了在多个基板上顺序分子束沉积的装置。 该装置包括通过空气锁耦合的生长室和辅助（取样器 - 交换）室。 基板由杆组成，杆可通过两个腔室之间的波纹管机构平移。 辅助室包括允许进入样品的端口，使得整个杆 - 波纹管机构不需要被移除以便改变样品。 辅助室还包括用于在其中保持超过大气压力的压力的惰性气氛的装置，特别是当端口打开时。 生长室包括圆柱形LN2护罩，其在其壁上具有孔，以将分子束仅允许加热（生长）基底。 因此，未加热（空闲）基板由梁遮蔽。 此外，护罩围绕生长衬底和生长室中的空闲衬底。 护罩的这种构造减少了空闲基板的污染的可能性。 此外，生长室包括用于选择性地加热生长衬底的装置，空闲衬底保持不加热，从而减少高蒸气压元件的蒸发。

公开(公告)号：US5550854A

公开(公告)日：1996-08-27

申请号：US346051

申请日：1994-11-29

申请人： Howard Z. Chen ,  Alfred Y. Cho

发明人： Howard Z. Chen ,  Alfred Y. Cho

IPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

CPC分类号： H01S5/10 ,  H01S5/1228 ,  H01S5/3428

摘要： A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included.

摘要翻译： 具有在光传播方向上形成的渐变折射率，分离限制异质结构（GRINSCH）和半绝缘半导体的交替部分的二进制分层结构的激光器。 激光器的有源区域包括在衬底上的至少两个GRINSCH部分和至少三个以交替方式夹持至少两个GRINSCH部分的填充部分。 包括基于二分层结构的半导体激光器的最小阈值电流和封装问题的实际限制的分析。

公开(公告)号：US4739385A

公开(公告)日：1988-04-19

申请号：US5357

申请日：1987-01-12

申请人： Clyde G. Bethea ,  Chung Y. Chen ,  Alfred Y. Cho

发明人： Clyde G. Bethea ,  Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L31/112 ,  H01L29/80 ,  H01L29/14 ,  H01L29/40 ,  H01L31/10

CPC分类号： H01L31/1123

摘要： A modulation-doped field effect photodetector has a fast response time.

摘要翻译： 调制掺杂场效应光电检测器具有快速响应时间。

公开(公告)号：US4599728A

公开(公告)日：1986-07-08

申请号：US512232

申请日：1983-07-11

申请人： Kambiz Alavi ,  Alfred Y. Cho ,  Thomas P. Pearsall ,  Henryk Temkin

发明人： Kambiz Alavi ,  Alfred Y. Cho ,  Thomas P. Pearsall ,  Henryk Temkin

IPC分类号： H01S5/343 ,  H01S5/40 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34313 ,  H01S5/34306 ,  H01S5/4031

摘要： A multi-quantum well laser having a Ga.sub.0.47 In.sub.0.53 As/Al.sub.0.48 In.sub.0.52 As active region emitting at 1.55 .mu.m and well layers having a thickness less than 150 Angstroms.

摘要翻译： 具有发射在1.55μm的Ga 0.47 In 0.53As / Al 0.48 In 0.52As有源区和厚度小于150埃的阱层的多量子阱激光器。

公开(公告)号：US4471367A

公开(公告)日：1984-09-11

申请号：US327551

申请日：1981-12-04

申请人： Chung Y. Chen ,  Alfred Y. Cho

发明人： Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/861 ,  H01L29/864 ,  H01L29/872 ,  H01L29/56

CPC分类号： H01L29/475 ,  H01L29/812 ,  H01L29/872

摘要： A thin and highly doped Ga.sub.0.47 In.sub.0.53 As layer disposed on a Ga.sub.0.47 In.sub.0.53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.

摘要翻译： 设置在Ga 0.47 In 0.53As层上的薄且高度掺杂的Ga 0.47 In 0.53 As层增加势垒高度并产生有用的器件特性。 例如，该结构可以用作InGaAs场效应晶体管中的栅电极。

公开(公告)号：US4297783A

公开(公告)日：1981-11-03

申请号：US142076

申请日：1980-04-21

申请人： Horace C. Casey, Jr. ,  Alfred Y. Cho ,  Philip W. Foy

发明人： Horace C. Casey, Jr. ,  Alfred Y. Cho ,  Philip W. Foy

IPC分类号： H01L21/033 ,  H01L21/203 ,  H01L21/314 ,  H01L29/06 ,  H01L21/223

CPC分类号： H01L29/0638 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/0332 ,  H01L21/314

摘要： Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.

摘要翻译： 通过MBE生长的半绝缘，氧，铁或铬掺杂的AlGaAs单晶层，GaAs器件中的表面复合电流降低。 AlGaAs层在GaAs体上生长，然后被掩蔽。 通过掩模中的窗口扩散合适的杂质将AlGaAs层的暴露部分转换成低电阻率并且改变GaAs体的下面的区域的导电性。 然而，AlGaAs层的外围部分保持半绝缘，并且有效地将表面复合速度 - 扩散长度乘积减少超过一个数量级。

公开(公告)号：US4249190A

公开(公告)日：1981-02-03

申请号：US54822

申请日：1979-07-05

申请人： Alfred Y. Cho

发明人： Alfred Y. Cho

IPC分类号： H01L29/417 ,  H01L21/203 ,  H01L21/285 ,  H01L21/338 ,  H01L29/47 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L29/66856 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/28581 ,  H01L29/8122

摘要： A planar field effect transistor (FET) includes a plurality of spaced-apart, floating Schottky barrier, epitaxial metal gate electrodes which are embedded within a semiconductor body. A drain electrode and a gate control electrode are formed on one major surface of the body whereas a source electrode, typically grounded, is formed on an opposite major surface of the body. The FET channel extends vertically between the source and drain, and current flow therein is controlled by application of suitable gate voltage. Two modes of operation are possible: (1) the depletion regions of the control gates and the floating gates pinch off the channel so that with zero control gate voltage no current flows from source to drain; then, forward biasing the control gate opens the channel; and (2) the depletion regions of the control gates and the floating gates do not pinch off the channel, but reverse biasing the control gate produces pinch off. Specifically described is a GaAs FET in which the floating gate electrodes are Al epitaxial layers grown by molecular beam epitaxy.

摘要翻译： 平面场效应晶体管（FET）包括多个间隔开的浮动肖特基势垒，嵌入在半导体本体内的外延金属栅电极。 漏极电极和栅极控制电极形成在主体的一个主表面上，而通常接地的源电极形成在主体的相对主表面上。 FET通道在源极和漏极之间垂直延伸，并且通过施加合适的栅极电压来控制其中的电流。 两种操作模式是可能的：（1）控制栅极和浮栅的耗尽区夹紧通道，使得在零控制栅极电压下，没有电流从源极流到漏极; 然后，正向偏置控制门打开通道; 和（2）控制栅极和浮置栅极的耗尽区不夹断沟道，而反向偏置控制栅极会产生夹断。 具体描述的是其中浮栅电极是通过分子束外延生长的Al外延层的GaAs FET。

公开(公告)号：US4236166A

公开(公告)日：1980-11-25

申请号：US54821

申请日：1979-07-05

申请人： Alfred Y. Cho ,  James V. DiLorenzo

发明人： Alfred Y. Cho ,  James V. DiLorenzo

IPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/205 ,  H01L29/78 ,  H01L29/80 ,  H01L29/812

CPC分类号： H01L29/7828 ,  H01L29/8122

摘要： A vertical field effect transistor (10) includes a relatively wide bandgap, lowly doped active layer (18) epitaxially grown on, and substantially lattice matched to, an underlying semiconductor body portion (13). A mesa (20) of lower bandgap material is epitaxially grown on and substantially lattice matched to the active layer. A source electrode (22) is formed on a bottom major surface (34) of the semiconductor body portion, a drain electrode (24) is formed on the top of the mesa, and a pair of gate electrode stripes (26) are formed on the active layer adjacent both sides of the mesa. When voltage (V.sub.G), negative with respect to the drain, is applied to the gate electrodes, the depletion regions (28) thereunder extend laterally in the active layer until they intersect, thereby pinching off the flow of current in the channel extending from the drain and source electrodes. Also described is an embodiment in which spaced-apart, high impedance zones (30) underlie the active layer and the mesas, and the spaces between zones underlie the gate stripes.

摘要翻译： 垂直场效应晶体管（10）包括在下面的半导体主体部分（13）上外延生长并基本上与其基本上晶格匹配的相对较宽的带隙低掺杂有源层（18）。 较低带隙材料的台面（20）外延生长并基本上与有源层晶格匹配。 源电极（22）形成在半导体主体部分的底部主表面（34）上，在台面的顶部形成漏极电极（24），并且一对栅电极条（26）形成在 邻近台面两侧的活动层。 当相对于漏极的负电压（VG）被施加到栅电极时，其下面的耗尽区（28）在有源层中横向延伸，直到它们相交，从而夹紧从沟道延伸的通道中的电流 漏极和源极。 还描述了一种实施例，其中位于有源层和台面之下的间隔开的高阻抗区域（30）以及位于栅极条之下的区域之间的空间。

公开(公告)号：US5633193A

公开(公告)日：1997-05-27

申请号：US652285

申请日：1996-05-22

申请人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

发明人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

IPC分类号： H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546

摘要： Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.

摘要翻译： 在不同的含磷III / V半导体材料（例如，InP）的非平面表面上的含磷III / V半导体材料（例如，InGaAsP）的异质外延生长通过基本上加热非平面表面而得到促进 抽真空室至质量传递温度，并将表面暴露于至少磷的助熔剂形成固体磷源。 该质量传送步骤之后是期望的半导体材料的原位生长，其中生长的至少初始部分在不大于质量传输温度的第一生长温度下进行。 生长通常在高于第一生长温度的第二生长温度下完成。 该方法的一个重要方面是从固体源提供所需的通量（例如磷，砷，铟，镓），导致无氢的质量传输和生长，其可以在比在 现有技术 该方法的示例性和优选应用是在基于InP的DFB激光器中的光栅形成和过度生长。