公开(公告)号：US4745447A

公开(公告)日：1988-05-17

申请号：US745294

申请日：1985-06-14

申请人： Chung Y. Chen ,  Alfred Y. Cho ,  Sung-Nee G. Chu

发明人： Chung Y. Chen ,  Alfred Y. Cho ,  Sung-Nee G. Chu

IPC分类号： H01L27/095 ,  H01L29/201 ,  H01L29/43 ,  H01L29/47 ,  H01L29/80 ,  H01S5/00 ,  H01S5/026 ,  H01L29/56

CPC分类号： H01L29/201 ,  H01L29/432 ,  H01L29/475 ,  H01L29/802

摘要： Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.

摘要翻译： 可以通过掺杂砷化镓层作为肖特基势垒，由砷化镓作为电子传导层（沟道层）制成有用的场效应晶体管。 使用较厚的砷化镓层实现低反向漏电流。

公开(公告)号：US4750025A

公开(公告)日：1988-06-07

申请号：US823985

申请日：1986-01-30

申请人： Chung Y. Chen ,  Alfred Y. Cho

发明人： Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L29/10 ,  H01L29/205 ,  H01L29/70

CPC分类号： H01L29/1004

摘要： We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.

摘要翻译： 当基极区域由发射极结附近的轻掺杂层和集电极结附近的重掺杂层构成时，我们发现晶体管具有期望的器件特性。 在发射极 - 基极结处的耗尽区的边缘设计成在轻掺杂的基极区域中停止。

公开(公告)号：US4739385A

公开(公告)日：1988-04-19

申请号：US5357

申请日：1987-01-12

申请人： Clyde G. Bethea ,  Chung Y. Chen ,  Alfred Y. Cho

发明人： Clyde G. Bethea ,  Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L31/112 ,  H01L29/80 ,  H01L29/14 ,  H01L29/40 ,  H01L31/10

CPC分类号： H01L31/1123

摘要： A modulation-doped field effect photodetector has a fast response time.

摘要翻译： 调制掺杂场效应光电检测器具有快速响应时间。

公开(公告)号：US4471367A

公开(公告)日：1984-09-11

申请号：US327551

申请日：1981-12-04

申请人： Chung Y. Chen ,  Alfred Y. Cho

发明人： Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/861 ,  H01L29/864 ,  H01L29/872 ,  H01L29/56

CPC分类号： H01L29/475 ,  H01L29/812 ,  H01L29/872

摘要： A thin and highly doped Ga.sub.0.47 In.sub.0.53 As layer disposed on a Ga.sub.0.47 In.sub.0.53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.

摘要翻译： 设置在Ga 0.47 In 0.53As层上的薄且高度掺杂的Ga 0.47 In 0.53 As层增加势垒高度并产生有用的器件特性。 例如，该结构可以用作InGaAs场效应晶体管中的栅电极。

公开(公告)号：US4553155A

公开(公告)日：1985-11-12

申请号：US592724

申请日：1984-03-22

申请人： Chung Y. Chen ,  Alfred Y. Cho

发明人： Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L31/0304 ,  H01L31/103 ,  H01L27/14

CPC分类号： H01L31/03046 ,  H01L31/1035 ,  Y02E10/544

摘要： A high speed bias-free photodetector which capacitively couples the output signal to an external circuit is described.

摘要翻译： 描述了将输出信号电容耦合到外部电路的高速偏置光电探测器。

公开(公告)号：US4471370A

公开(公告)日：1984-09-11

申请号：US257355

申请日：1981-04-24

申请人： Chung Y. Chen ,  Alfred Y. Cho

发明人： Chung Y. Chen ,  Alfred Y. Cho

IPC分类号： H01L31/10 ,  H01L31/109 ,  H01L31/11 ,  H01L29/161 ,  H01L27/14 ,  H01L29/12

CPC分类号： H01L31/11 ,  H01L31/109

摘要： A majority carrier photodetector has high sensitivity and fast response times. The photodetector comprises a thin highly doped layer surrounded on either side by two nominally undoped layers which are completely depleted at thermal equilibrium.

摘要翻译： 多数载波光电探测器具有高灵敏度和快速响应时间。 光电检测器包括薄的高度掺杂层，其在任一侧被两个在热平衡下完全耗尽的标称未掺杂的层包围。

公开(公告)号：US5502787A

公开(公告)日：1996-03-26

申请号：US445821

申请日：1995-05-22

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02F1/025 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  G02B6/02 ,  G02B6/16

CPC分类号： B82Y20/00 ,  G02B6/122 ,  G02B6/1228 ,  H01S5/20 ,  H01S5/305 ,  H01S5/2004 ,  H01S5/3211 ,  H01S5/3402

摘要： Articles according to the invention include a semiconductor waveguide having a core and a cladding, with the cladding including doped semiconductor material. The doping level is selected such that both the real part n and the imaginary part k of the complex refractive index of the doped material are relatively low, exemplarily n

摘要翻译： 根据本发明的制品包括具有芯和包层的半导体波导，其中包层包含掺杂的半导体材料。 选择掺杂级别使得掺杂材料的复折射率的实部n和虚部k都相对较低，示例性地为n <0.5εINFINITY 1/2和k <1，其中εINININITY为高 材料的频率晶格介电常数。 掺杂水平的适当选择可以导致引导辐射的改进的限制，而不会导致辐射的衰减的过度增加。 本发明示例性地体现在长波长（DIFFERENCE8.5μm）量子级联激光器中。 预期其他实施例。

公开(公告)号：US5265177A

公开(公告)日：1993-11-23

申请号：US881020

申请日：1992-05-08

申请人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

发明人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B27/09 ,  H01S5/00

CPC分类号： G02B6/42 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/09 ,  G02B27/0994 ,  G02B6/4206 ,  G02B2006/12195 ,  G02B6/305 ,  Y10S438/978

摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (RIE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.

公开(公告)号：US5212395A

公开(公告)日：1993-05-18

申请号：US844264

申请日：1992-03-02

申请人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

发明人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

IPC分类号： H01L31/10 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC分类号： H01L31/022466 ,  H01L31/02161 ,  H01L31/105

摘要： This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.

公开(公告)号：US4239955A

公开(公告)日：1980-12-16

申请号：US956065

申请日：1978-10-30

申请人： Alfred Y. Cho

发明人： Alfred Y. Cho

IPC分类号： C30B23/06 ,  H01L21/203 ,  H05B3/06

CPC分类号： C30B23/063

摘要： The effusion cell for molecular beam epitaxy apparatus consists of a pyrolytic BN cylindrical crucible surrounded by a heating coil. The position of the heating coil is maintained by a plurality of ceramic rods extending parallel to the cylinder axis with notches along their length for engaging the heating coil. The ceramic rods are secured by a retaining ring near the front of the crucible and an apertured disk near the back of the crucible. The entire assembly is surrounded by a foil heat shield.

摘要翻译： 用于分子束外延装置的渗流池由由加热线圈包围的热解BN圆柱形坩埚组成。 加热线圈的位置由平行于圆柱体轴线延伸的多个陶瓷棒保持，其长度方向上具有凹口，用于接合加热线圈。 陶瓷棒通过靠近坩埚前部的保持环和靠近坩埚后部的孔径盘固定。 整个组件被箔片隔热罩包围。