公开(公告)号：US08501516B2

公开(公告)日：2013-08-06

申请号：US12740607

申请日：2008-10-13

申请人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L21/306

CPC分类号： B81C1/00103 ,  B81B2203/0384 ,  B81C2201/0136

摘要： A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer.

摘要翻译： 一种用于生产具有凸起状侧壁轮廓形状或能够被设定的倾斜角的微机械图案的方法，从存在于或沉积在硅半导体衬底上的SiGe混合半导体层中蚀刻微机械图案， 通过干法化学蚀刻SiGe混合半导体层; 通过改变要蚀刻的SiGe混合半导体层中的锗比例来显影微机械图案的侧壁轮廓形状; 存在于要被更强蚀刻的区域中更大的锗比例; SiGe混合半导体层中的锗比例的变化通过选自包括沉积具有不同锗含量的SiGe混合半导体层，将锗引入到硅半导体层或SiGe混合半导体层中的方法来设置，将硅引入 锗层或SiGe混合半导体层和/或通过SiGe混合半导体层的热氧化。

公开(公告)号：US20120018779A1

公开(公告)日：2012-01-26

申请号：US12740607

申请日：2008-10-13

申请人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

发明人： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： B81C1/00103 ,  B81B2203/0384 ,  B81C2201/0136

摘要： A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer.

摘要翻译： 一种用于生产具有凸起状侧壁轮廓形状或能够被设定的倾斜角的微机械图案的方法，从存在于或沉积在硅半导体衬底上的SiGe混合半导体层中蚀刻微机械图案， 通过干法化学蚀刻SiGe混合半导体层; 通过改变要蚀刻的SiGe混合半导体层中的锗比例来显影微机械图案的侧壁轮廓形状; 存在于要被更强蚀刻的区域中更大的锗比例; SiGe混合半导体层中的锗比例的变化通过选自包括沉积具有不同锗含量的SiGe混合半导体层，将锗引入到硅半导体层或SiGe混合半导体层中的方法来设置，将硅引入 锗层或SiGe混合半导体层和/或通过SiGe混合半导体层的热氧化。

公开(公告)号：US08885849B2

公开(公告)日：2014-11-11

申请号：US13138276

申请日：2010-01-11

申请人： Alberto Arias-Drake ,  Thomas Buck ,  Jochen Zoellin ,  Juan Ramos-Martos ,  Franz Laermer ,  Antonio Ragel-Morales ,  Joaquin Ceballos-Caceres ,  Jose M. Mora-Gutierrez

发明人： Alberto Arias-Drake ,  Thomas Buck ,  Jochen Zoellin ,  Juan Ramos-Martos ,  Franz Laermer ,  Antonio Ragel-Morales ,  Joaquin Ceballos-Caceres ,  Jose M. Mora-Gutierrez

IPC分类号： H04B15/00 ,  H04R19/01 ,  H04R3/00

CPC分类号： H04R3/007 ,  H04R19/016

摘要： A concept is proposed for a MEMS microphone which may be operated at a relatively low voltage level and still have comparatively high sensitivity. The component according to the present invention includes a micromechanical microphone structure having an acoustically active diaphragm which functions as a deflectable electrode of a microphone capacitor (1), and a stationary acoustically permeable counterelement which functions as a counter electrode of the microphone capacitor (1). The component also includes means for applying a high-frequency clock signal (2) to the microphone capacitor (1) and for applying the inverted clock signal (2′) to an adjustable but acoustically inactive compensation capacitor (7), an integrating operational amplifier (3) which integrates the sum of the current flow through the microphone capacitor (1) and the current flow through the compensation capacitor (7), a demodulator (4) for the output signal of the integrating operational amplifier (3), the demodulator being synchronized with the clock signal (2), and a low-pass filter for obtaining a microphone signal which corresponds to the changes in capacitance of the microphone capacitor (1), based on the output signal of the demodulator (4).

摘要翻译： 对于可以在相对低的电压水平操作且仍具有较高灵敏度的MEMS麦克风提出了一个概念。 根据本发明的部件包括具有用作麦克风电容器（1）的可偏转电极的声学活动膜片的微机械麦克风结构和用作麦克风电容器（1）的对电极的静止声透射反射器， 。 该组件还包括用于将高频时钟信号（2）施加到麦克风电容器（1）并用于将反相时钟信号（2'）施加到可调谐但无声补偿电容器（7）的装置，积分运算放大器 （3），其集成了通过麦克风电容器（1）的电流和通过补偿电容器（7）的电流之和，用于积分运算放大器（3）的输出信号的解调器（4），解调器 与时钟信号（2）同步，以及低通滤波器，用于基于解调器（4）的输出信号获得与麦克风电容器（1）的电容变化相对应的麦克风信号。

公开(公告)号：US20100033060A1

公开(公告)日：2010-02-11

申请号：US12538389

申请日：2009-08-10

申请人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

发明人： Franz Laermer ,  Thorsten Pannek ,  Ralf Reichenbach ,  Marian Keck

IPC分类号： H02N2/18

CPC分类号： H01L41/1134 ,  B60C23/041 ,  H01L41/0475

摘要： A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.

摘要翻译： 一种用于从变形产生电能的弯曲换能器装置，以及具有这种弯曲换能器的电路模块。 弯曲换能器包括至少一个可电动变形的，具有振动能力的导电支撑结构，一个压电元件和第一接触元件，所述导电支撑结构具有用于约束支撑结构的第一约束区和第二约束区， 元件被设计并且位于支撑结构上，使得压电元件由于由振动引起的支撑结构的变形而变形，并且形成用于拾取由压电元件的变形产生的电压的第一电极 并且由所述支撑结构接触，所述第一接触元件电连接到所述第一约束区域和所述第二约束区域外的所述支撑结构。

公开(公告)号：US07642545B2

公开(公告)日：2010-01-05

申请号：US10520886

申请日：2003-05-06

申请人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt

发明人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt

IPC分类号： H01L21/00

CPC分类号： B81C1/00571 ,  B81B2203/033 ,  B81C2201/016 ,  H01L21/0332

摘要： A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.

摘要翻译： 提供了一种用于制造层系统的层系统和方法，所述层系统具有硅层，其上至少区域地表面钝化钝化层，所述钝化层具有第一至少大部分无机部分层和第二层 ，至少主要是聚合物部分层。 该方法包括在硅层上制备第一无机部分层，并在该第一部分层上制备形成钝化层的第二聚合物部分层。 中间层的制造以与第一部分层相邻的表面区域的中间层构成为第一部分层的方式发生，并且与其邻接的第二部分层的表面区域中的中间层构成为第二部分层 部分层。 中间层的组成可以从对应于第一部分层的组合物连续地或逐步地转变成对应于第二部分层的组合物。

公开(公告)号：US20090171524A1

公开(公告)日：2009-07-02

申请号：US11920360

申请日：2006-05-02

申请人： Volker Pitzal ,  Oliver Froehlich ,  Wolfram Gerwing ,  Martin Grosser ,  Franz Laermer ,  Udo Schulz ,  Thomas Proepper

发明人： Volker Pitzal ,  Oliver Froehlich ,  Wolfram Gerwing ,  Martin Grosser ,  Franz Laermer ,  Udo Schulz ,  Thomas Proepper

IPC分类号： G06F19/00

CPC分类号： B60W50/0205 ,  B60G17/0185 ,  B60L11/14 ,  B60L2250/24 ,  B60W40/13 ,  B60W2520/105 ,  B60W2520/125 ,  B60W2520/16 ,  F02D41/0215 ,  F02D41/022 ,  F02D41/10 ,  F02D41/2096 ,  F02D41/222 ,  Y02T10/44

摘要： A method and a device for controlling a drive unit of a vehicle are provided in which, starting from the comparison of a first acceleration variable, which is calculated at least from the operating state of the drive unit, and a second acceleration variable, an error is detected. The second acceleration variable includes a first component, in the direction of the vehicle longitudinal axis, and a second component, perpendicular to the vehicle longitudinal axis.

摘要翻译： 提供了一种用于控制车辆的驱动单元的方法和装置，其中，从至少从驱动单元的运行状态计算的第一加速度变量与第二加速度变量的比较开始， 被检测到。 第二加速度变量包括在车辆纵向轴线的方向上的第一分量和垂直于车辆纵向轴线的第二分量。

公开(公告)号：US07531229B2

公开(公告)日：2009-05-12

申请号：US10618795

申请日：2003-07-14

申请人： Udo-Martin Gomez ,  Franz Laermer

发明人： Udo-Martin Gomez ,  Franz Laermer

IPC分类号： B32B3/02 ,  B60T8/60 ,  B60T8/74 ,  H01L23/15 ,  G01P15/00

CPC分类号： B81B7/0077 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/031 ,  G01P15/0802 ,  G01P15/125 ,  Y10T428/239 ,  Y10T428/24917

摘要： A microstructured component having a layered construction may allow implementation of component structures having a layer thickness of more than 50 μm, e.g., more than 100 μm. Capping of the component structure may allow vacuum enclosure of the component structure with a hermetically sealed electrical connection. The layered construction of the microstructured component includes a carrier including at least one glass layer, e.g., a PYREX™ layer, a component structure, arranged in a silicon layer, which is bonded to the glass layer, and a cap, which is positioned over the component structure and is also bonded to the glass layer.

摘要翻译： 具有分层结构的微结构部件可以允许实现层厚度大于50μm，例如大于100μm的组分结构。 组件结构的封盖可以允许具有气密密封的电连接的部件结构的真空外壳。 微结构化部件的分层结构包括载体，其包括至少一个玻璃层，例如PYREX TM层，布置在硅层中的部件结构，其结合到玻璃层，以及帽，其是 位于组件结构上方并且也结合到玻璃层。

公开(公告)号：US06974709B2

公开(公告)日：2005-12-13

申请号：US10407015

申请日：2003-04-03

申请人： Klaus Breitschwerdt ,  Franz Laermer

发明人： Klaus Breitschwerdt ,  Franz Laermer

IPC分类号： H01J37/32 ,  H01L21/00 ,  G01R31/26 ,  H01L21/66

CPC分类号： H01L21/67069 ,  H01J37/32935

摘要： A method is provided for detecting an end point, a material transition or a boundary surface during the etching of a semiconductor element, a zone of the semiconductor element having non-homogeneous load carrier density and/or non-homogeneous load carrier polarity, particularly a p-n junction, which has an electrical voltage applied to it during etching, and an electrical current induced by it in this zone is measured, and reaching of this zone during etching is determined from a change in the electrical current. This method is suitable for the detection of the etching end point in gas phase etching, in particular with the aid of the etching gases ClF3 and/or BrF3, or in the anisotropic plasma etching of silicon substrates. In addition, a method is provided for etching a semiconductor element using a gaseous etching medium, during which the speed of removal of the semiconductor element is set or changed via a setting of the polarity and/or the density of free load carriers in the semiconductor element. In addition, a device for etching a semiconductor element, which device is suitable for carrying out the two methods described above, is provided.

摘要翻译： 提供一种用于在半导体元件的蚀刻期间检测端点，材料转变或边界表面的方法，具有非均匀负载载流子密度和/或非均匀负载载流子极性的半导体元件的区域，特别是 pn结，其在蚀刻期间具有施加到其上的电压，并且测量在该区域中由其感生的电流，并且根据电流的变化来确定蚀刻期间该区域的到达。 该方法适用于在气相蚀刻中特别是借助于蚀刻气体ClF 3 3和/或BrF 3 3的蚀刻终点的检测，或者在 硅衬底的各向异性等离子体蚀刻。 此外，提供了一种使用气体蚀刻介质蚀刻半导体元件的方法，在该方法中，通过设置半导体中的自由载流子的极性和/或密度来设定或改变半导体元件的移除速度 元件。 此外，提供了一种用于蚀刻半导体元件的装置，该装置适合于执行上述两种方法。

公开(公告)号：US06531031B1

公开(公告)日：2003-03-11

申请号：US09623734

申请日：2000-11-22

申请人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

发明人： Volker Becker ,  Franz Laermer ,  Andrea Schilp ,  Thomas Beck

IPC分类号： H01L2100

CPC分类号： H01J37/321

摘要： A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.

摘要翻译： 一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。 具有第一线圈端和第二线圈端的ICP线圈，其在反应器中产生作用于反应气体的高频电磁交变场，并且作为电感耦合等离子体源，从反应性粒子和离子产生高密度等离子体。 两个线圈端各自通过馈电点与高频电源进行通信，每种情况都适用于高频电源。 相同频率的电压到第一线圈端和第二线圈端（21,21'）。 两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络，并且至少几乎相互相反地并且具有至少接近于 相同的幅度。

公开(公告)号：US06372656B1

公开(公告)日：2002-04-16

申请号：US09406272

申请日：1999-09-24

申请人： Franz Laermer ,  Wilhelm Frey

发明人： Franz Laermer ,  Wilhelm Frey

IPC分类号： H01L21302

CPC分类号： G01J5/12 ,  H01L31/09

摘要： A method of producing an infrared sensor on a semiconductor substrate involves defining at least one area on the surface of the semiconductor substrate where a recess is to be created in the semiconductor substrate, depositing a membrane on the surface, applying a radiation absorber to the membrane in the defined area, applying thermoelements with a hot contact in thermal contact with the radiation absorber and a cold contact in thermal contact with the semiconductor substrate. In this method, an opening is provided in the membrane in the defined area, and the semiconductor substrate is etched through the opening.

摘要翻译： 在半导体衬底上制造红外传感器的方法包括：在半导体衬底的表面上形成至少一个区域，在半导体衬底的表面上形成凹槽，在半导体衬底中形成凹槽，在表面上沉积膜，向膜上施加辐射吸收体 在限定的区域中，将具有与辐射吸收体热接触的热接触件的热电偶和与半导体衬底热接触的冷接触件加热。 在该方法中，在限定区域中的膜中设置开口，并且通过开口蚀刻半导体衬底。