公开(公告)号：US20230296831A1

公开(公告)日：2023-09-21

申请号：US17695673

申请日：2022-03-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Di Liang ,  Raymond G. Beausoleil

IPC: G02B6/12 ,  G02F1/025 ,  H01S5/026

CPC classification number: G02B6/12004 ,  G02F1/025 ,  H01S5/026 ,  G02B2006/12061

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

公开(公告)号：US11630334B2

公开(公告)日：2023-04-18

申请号：US16948579

申请日：2020-09-24

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Di Liang ,  Sudharsanan Srinivasan

IPC: G02F1/025 ,  G02F1/313

Abstract: Examples described herein relate to an optical coupler. The optical coupler may include a first optical waveguide base layer, a second optical waveguide base layer, an insulating layer disposed over at least a portion of both the first optical waveguide base layer and the second optical waveguide base layer, and a semiconductor material layer disposed over the insulating layer. Overlapping portions of the first optical waveguide base layer, the insulating layer, and the semiconductor material layer form a first optical waveguide, and overlapping portions of the second optical waveguide base layer, the insulating layer, and the semiconductor material layer form a second optical waveguide. Moreover, the optical coupler may include a plurality of metal contacts to receive one or more first biasing voltages to operate one of the first optical waveguide base layer and the second optical waveguide base layer in an accumulation mode.

公开(公告)号：US20200244040A1

公开(公告)日：2020-07-30

申请号：US16258616

申请日：2019-01-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Renne Ty Tan ,  Sagi Varghese Mathai ,  Stanley Cheung

IPC: H01S5/183 ,  H01S5/42

Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

公开(公告)号：US10084285B1

公开(公告)日：2018-09-25

申请号：US15688448

申请日：2017-08-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Tan ,  Sagi Mathai ,  Stanley Cheung

IPC: G11B7/00 ,  H01S5/183 ,  G02B6/42 ,  H01S5/42

CPC classification number: H01S5/18319 ,  G02B6/2713 ,  G02B6/2773 ,  G02B6/4213 ,  G02B6/4246 ,  G02B6/4249 ,  G02B6/425 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/18341 ,  H01S5/18355 ,  H01S5/18361 ,  H01S5/18386 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/423 ,  H01S2301/163

Abstract: An example system may include a first vertical cavity surface emitting laser (VCSEL) that includes a first integrated polarization locking structure to produce a polarized optical data signal. The system may also comprise a second VCSEL that includes a second integrated polarization locking structure, the second integrated polarization locking structure orthogonal to the first integrated polarization locking structure, to produce an orthogonally polarized optical data signal. Lenses may be disposed on the substrate opposite the first VCSEL, to collimate the polarized optical data signal, and opposite the second VCSEL to collimate the orthogonally polarized optical data signal. A polarization division multiplexer may combine the first collimated polarized optical data signal and the second collimated orthogonally polarized optical data signal.

公开(公告)号：US12242142B2

公开(公告)日：2025-03-04

申请号：US17661249

申请日：2022-04-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Wayne Victor Sorin ,  Stanley Cheung

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02F1/21 ,  H04B10/2507

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US20240329489A1

公开(公告)日：2024-10-03

申请号：US18192509

申请日：2023-03-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yiwei Peng ,  Wayne Sorin ,  Yuan Yuan ,  Stanley Cheung ,  Thomas Van Vaerenbergh ,  Marco Fiorentino

IPC: G02F1/21 ,  G02F1/225 ,  G06N3/04

CPC classification number: G02F1/212 ,  G02F1/225 ,  G06N3/04 ,  G02F2203/50

Abstract: An example Mach-Zehnder interferometer (MZI) is provided. The MZI includes a first waveguide arm and a second waveguide arm coupled to the first waveguide arm via a pair of optical couplers. In the proposed MZI, at least one of the first waveguide arm and the second waveguide arm includes a plurality of Bragg-grating segments and a phase-shifter segment formed between adjacent Bragg-grating segments of the plurality of Bragg-grating segments. The phase-shifter segment formed between adjacent Bragg-grating segments induces a predefined phase-shift in an optical signal propagating through respective at least one of the first waveguide arm and the second waveguide arm, resulting in increased linearity an optical transmission via the MZI.

公开(公告)号：US20240184182A1

公开(公告)日：2024-06-06

申请号：US18062040

申请日：2022-12-06

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Yiwei Peng ,  Zhuoran Fang ,  Bassem Tossoun ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02F1/225 ,  G02F1/21

CPC classification number: G02F1/2257 ,  G02F1/212

Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.

公开(公告)号：US20240113490A1

公开(公告)日：2024-04-04

申请号：US17937071

申请日：2022-09-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Wayne Victor Sorin ,  Yuan Yuan ,  Raymond G. Beausoleil ,  Di Liang

IPC: H01S3/083 ,  H01S3/08 ,  H01S3/10 ,  H01S3/106 ,  H01S3/107

CPC classification number: H01S3/083 ,  H01S3/08027 ,  H01S3/08031 ,  H01S3/10053 ,  H01S3/1062 ,  H01S3/107

Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.

公开(公告)号：US10985531B2

公开(公告)日：2021-04-20

申请号：US16258616

申请日：2019-01-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Renne Ty Tan ,  Sagi Varghese Mathai ,  Stanley Cheung

IPC: H01S5/183 ,  H01S5/42

Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

公开(公告)号：US10290996B1

公开(公告)日：2019-05-14

申请号：US15962649

申请日：2018-04-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Sagi Varghese Mathai ,  Stanley Cheung ,  Wayne V. Sorin ,  Michael Renne Ty Tan

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/187 ,  H01S5/022 ,  H01S5/024

Abstract: A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.