公开(公告)号：US06919268B1

公开(公告)日：2005-07-19

申请号：US10451598

申请日：2001-12-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/28556 ,  H01L21/28568

摘要： WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).

摘要翻译： WF 6用作钨的源气体，NH 3被用作氮的源气体。 WF 6分压的分压设定为高于NH 3的分压。 衬底温度设定为约400℃至450℃。沉积氮化钨，然后加热，形成接触塞（106）。

公开(公告)号：US06797068B1

公开(公告)日：2004-09-28

申请号：US10049283

申请日：2002-02-11

申请人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

摘要翻译： 本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置 处理容器和用于加热被放置在台架上的待处理物体的加热装置。 分隔壁围绕台的侧面和下侧。 通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。 间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

公开(公告)号：US06486063B2

公开(公告)日：2002-11-26

申请号：US09793896

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.

摘要翻译： 在半导体器件制造方法中，在硅衬底上形成层间绝缘膜。 在层间绝缘膜中形成沟槽。 通过热化学气相沉积形成由钨基材料制成的下基底膜以覆盖沟槽的底表面和侧表面。 由钨基材料制成的上基底膜通过热化学气相沉积形成在下层薄膜上的整个区域上。 由铜制成的铜膜填充沟槽。 根据热化学气相沉积，通过供给钨源气体和其它原料气体，使得其它源气体的供给量比钨源气体的量大，形成上层膜。 根据热化学气相沉积，通过将钨源气体的含量大于其它源气体的含量来形成下基底膜，以形成下基底膜。

公开(公告)号：US06089184A

公开(公告)日：2000-07-18

申请号：US92060

申请日：1998-06-05

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： C23C16/18 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

公开(公告)号：US20090291549A1

公开(公告)日：2009-11-26

申请号：US12097418

申请日：2006-11-24

申请人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

IPC分类号： H01L21/26 ,  H01L21/28

CPC分类号： C23C16/16 ,  C23C8/16 ,  C23C8/36 ,  C23C16/56 ,  H01L21/28079 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/517

摘要： On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

摘要翻译： 在Si衬底1即半导体衬底上形成栅极绝缘膜2，然后通过CVD使用包含W（CO）6气体的成膜气体在栅极绝缘膜2上形成W基膜3a 。 然后，在存在还原气体的情况下，膜被氧化，W基膜3a中的W不被氧化，只有选择性地氧化C以降低W基膜3a中所含的C浓度。 然后，根据需要进行热处理后，进行抗蚀剂涂布，图案化，蚀刻等，通过离子注入等形成杂质扩散区域10，形成具有MOS结构的半导体器件。

公开(公告)号：US20090140353A1

公开(公告)日：2009-06-04

申请号：US12083962

申请日：2006-10-24

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L29/78 ,  C23C16/54 ,  H01L21/768

CPC分类号： C23C16/34 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/28194 ,  H01L21/28556 ,  H01L29/517 ,  H01L29/518

摘要： The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

摘要翻译： 本发明是一种薄膜沉积方法，该方法包括一个成膜步骤，该方法是向可抽真空的处理容器提供高熔点有机金属材料气体和含氮气体，从而沉积一层薄膜 处理容器内的待处理物体表面上的高熔点金属的金属化合物。 为了提高薄膜中所含的碳密度，在成膜步骤中含氮气体的分压为17％以下。

公开(公告)号：US20050227441A1

公开(公告)日：2005-10-13

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  John Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336 ,  C30B1/00 ,  H01L21/20 ,  H01L21/3205 ,  H01L21/36 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US20050120955A1

公开(公告)日：2005-06-09

申请号：US11030899

申请日：2005-01-10

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Norihiko Yamamoto

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Norihiko Yamamoto

IPC分类号： C23C16/16 ,  C23C16/44 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/16 ,  C23C16/4412

摘要： A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a gas exhaust line for exhausting gas from the processing vessel, having a vacuum pump system structured by a turbo molecular pump and a dry pump, and a pre-flow line branching off from the source supply line while bypassing the processing vessel and the turbo molecular pump, and joining to the gas exhaust line. Moreover, the source supply line includes piping having an inner diameter greater than 6.4 mm, and a turbo molecular pump is provided in the pre-flow line.

摘要翻译： 成膜单元包括用于接收源气体的原料的源容器，用于在半导体衬底上施加成膜工艺的处理容器，用于将来自源容器的源气体供给至处理 容器，用于排出来自处理容器的气体的排气管线，具有由涡轮分子泵和干式泵构成的真空泵系统，以及在绕过处理容器的同时从源供给管线分支的预流管线， 涡轮分子泵，并连接到排气管路。 此外，源供应管线包括内径大于6.4mm的管道，并且在预流动管线中设置涡轮分子泵。

公开(公告)号：US20050070100A1

公开(公告)日：2005-03-31

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/44 ,  H01L21/285 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

公开(公告)号：US06489198B2

公开(公告)日：2002-12-03

申请号：US09812691

申请日：2001-03-21

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  H01L27/10814

摘要： A semiconductor device includes at least one interlevel insulating film, a storage electrode, a capacitor insulating film, a plate electrode, and a protective film. The interlevel insulating film is arranged on a semiconductor substrate. The storage electrode is made of a metal material and arranged on the interlevel insulating film. The capacitor insulating film is made of an insulating metal oxide and arranged on the storage electrode. The plate electrode is made of tungsten nitride and arranged on the capacitor insulating film. The protective film is arranged on the plate electrode to suppress outward diffusion of nitrogen from the plate electrode. A method of manufacturing the semiconductor device is also disclosed.

摘要翻译： 半导体器件包括至少一个层间绝缘膜，存储电极，电容器绝缘膜，平板电极和保护膜。 层间绝缘膜布置在半导体衬底上。 存储电极由金属材料制成并布置在层间绝缘膜上。 电容器绝缘膜由绝缘金属氧化物制成并且布置在存储电极上。 平板电极由氮化钨制成并且布置在电容器绝缘膜上。 保护膜布置在板电极上以抑制氮从板电极的向外扩散。 还公开了制造半导体器件的方法。