公开(公告)号：US06650683B2

公开(公告)日：2003-11-18

申请号：US10228217

申请日：2002-08-27

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18388 ,  H01S2301/166 ,  H01S2301/18

摘要： The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

摘要翻译： 本发明提供一种表面发射半导体激光器，包括：半导体衬底，其上依次层叠有下层多层反射镜，有源层区域和上层多层反射镜，其与下层多层反射镜一起贡献 形成一个空腔; 上电极，其设置在所述上​​多层反射镜的上层上，并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分，其设置在所述上​​电极和所述下多层反射镜之间，并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径，使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值，并且抑制高阶横向模式，并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。

公开(公告)号：US06529541B1

公开(公告)日：2003-03-04

申请号：US09714980

申请日：2000-11-20

申请人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

发明人： Nobuaki Ueki ,  Akira Sakamoto ,  Masahiro Yoshikawa ,  Hideo Nakayama ,  Hiromi Otoma

IPC分类号： H01S5183

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/18388 ,  H01S2301/166

摘要： A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

摘要翻译： 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底，其上依次层叠下n型DBR层，有源层区域，上p型DBR层，作为上层n型DBR层的上层的p侧电极， 型的DBR层，并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率，确定孔的金属孔直径（Wmetal）和电流限制部分的直径（Woxide），使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。

公开(公告)号：US5963242A

公开(公告)日：1999-10-05

申请号：US739220

申请日：1996-10-29

申请人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

发明人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B41J2/435 ,  B41J2/47

CPC分类号： B41J2/45

摘要： An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling path of the light beams from the plural light-emitting elements to the photosensitive member and by moving the photosensitive member relative to the array light source; a beam-converging unit which intercrosses a bundle of the light beams emitted from the light-emitting elements onto a beam-conversion point; and an focusing unit disposed between the beam-converging unit and the photosensitive member, which images the light beams emitted from the plural of light-emitting elements and intercrossed by the beam-converging unit onto the photosensitive member.

摘要翻译： 一种图像记录装置，具有排列成规定密度的多个发光元件的阵列光源; 一个感光元件暴露于从多个发光元件发射的光束上，使得通过将来自多个发光元件的光束的行进路径固定在感光元件上并通过使感光元件相对于阵列移动来记录图像 光源; 光束会聚单元，其将从发光元件发射的光束交叉到光束转换点; 以及设置在所述光束会聚单元和所述感光构件之间的聚焦单元，其对从所述多个发光元件发射的光束进行成像，并且通过所述光束会聚单元与所述感光构件交叉。

公开(公告)号：US5563901A

公开(公告)日：1996-10-08

申请号：US420822

申请日：1995-04-12

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/18 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/42 ,  H01S5/18

摘要： In a semiconductor laser array in which a semiconductor laser element having a horizontal-direction cavity, and plural outer inclined reflecting mirrors capable of reflecting laser light projected from the semiconductor laser element along a specific direction are integrated on a semiconductor substrate in a monolithic form, these outer inclined reflecting mirrors are positioned adjacent to each other, and also are arranged in such a manner that a distance between the adjoining horizontal-direction cavities becomes longer while being located apart from said outer inclined reflecting mirrors.

摘要翻译： 在半导体激光器阵列中，具有水平方向腔的半导体激光器元件和能够反射沿着特定方向从半导体激光元件投影的激光的多个外倾斜反射镜以整体形式集成在半导体衬底上， 这些外倾斜反射镜彼此相邻地定位，并且还布置成使得相邻的水平方向空腔之间的距离变得更长，同时与所述外倾斜反射镜分开。

公开(公告)号：US07573929B2

公开(公告)日：2009-08-11

申请号：US11580579

申请日：2006-10-13

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/026 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06837 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/2081 ,  H01S5/423

摘要： A vertical-cavity surface-emitting laser diode (VCSEL) device, including a laser element portion formed on a substrate, the laser element portion comprising a multi-layer reflective mirror of a first conductivity type, an active layer, and a multi-layer reflective mirror of a second conductivity type, and a light absorbing heat converting region at a position thermally connected to the laser element portion on the substrate, the light absorbing heat converting region absorbing light and generating heat.

摘要翻译： 一种垂直腔表面发射激光二极管（VCSEL）器件，包括形成在衬底上的激光元件部分，所述激光元件部分包括第一导电类型的多层反射镜，有源层和多层 第二导电类型的反射镜，以及在与基板上的激光元件部分热连接的位置处的光吸收热转换区域，光吸收热转换区域吸收光并产生热量。

公开(公告)号：US07305018B2

公开(公告)日：2007-12-04

申请号：US11319393

申请日：2005-12-29

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0261 ,  H01S5/042 ,  H01S5/06825 ,  H01S5/3432 ,  H01S5/423

摘要： A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electrically connected to a first electrode, and a second semiconductor layer of a second conduction type electrically connected to a second electrode. The protection element includes a third semiconductor layer of the first conduction type electrically connected to a third electrode, and a fourth semiconductor layer of the second conduction type electrically connected to the second electrode. The first semiconductor layer and the first electrode are electrically isolated from the third semiconductor layer and the third electrode by insulation means.

摘要翻译： 表面发射半导体激光器包括衬底，衬底上的至少一个发光元件和衬底上的至少一个保护元件。 发光元件包括电连接到第一电极的第一导电类型的第一半导体层和与第二电极电连接的第二导电类型的第二半导体层。 保护元件包括电连接到第三电极的第一导电类型的第三半导体层和与第二电极电连接的第二导电类型的第四半导体层。 第一半导体层和第一电极通过绝缘装置与第三半导体层和第三电极电隔离。

公开(公告)号：US20070091962A1

公开(公告)日：2007-04-26

申请号：US11491794

申请日：2006-07-24

申请人： Akemi Murakami ,  Hiromi Otoma ,  Ryoji Ishii

发明人： Akemi Murakami ,  Hiromi Otoma ,  Ryoji Ishii

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01L2224/48463 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/02288 ,  H01S5/0425

摘要： The present invention provides a substrate for a VCSEL that improves reliability and yield. A substrate for VCSEL includes multiple element regions separated by an element dividing region that is scribed or diced. In each element region, a light emitter that emits laser light in a direction perpendicular to the substrate, and an electrode pad electrically coupled to the light emitter are formed. In the element dividing region, electrode pads for inspection each electrically coupled to the light emitter of each element region is formed.

摘要翻译： 本发明提供了一种提高可靠性和产率的VCSEL用基板。 用于VCSEL的衬底包括由被刻划或切割的元素划分区域分隔开的多个元件区域。 在每个元件区域中，形成在垂直于衬底的方向上发射激光的光发射器和与发光体电耦合的电极焊盘。 在元件分割区域中，形成电耦合到每个元件区域的发光体的用于检查的电极焊盘。

公开(公告)号：US20060285567A1

公开(公告)日：2006-12-21

申请号：US11319393

申请日：2005-12-29

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0261 ,  H01S5/042 ,  H01S5/06825 ,  H01S5/3432 ,  H01S5/423

摘要： A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electrically connected to a first electrode, and a second semiconductor layer of a second conduction type electrically connected to a second electrode. The protection element includes a third semiconductor layer of the first conduction type electrically connected to a third electrode, and a fourth semiconductor layer of the second conduction type electrically connected to the second electrode. The first semiconductor layer and the first electrode are electrically isolated from the third semiconductor layer and the third electrode by insulation means.

摘要翻译： 表面发射半导体激光器包括衬底，衬底上的至少一个发光元件和衬底上的至少一个保护元件。 发光元件包括电连接到第一电极的第一导电类型的第一半导体层和与第二电极电连接的第二导电类型的第二半导体层。 保护元件包括电连接到第三电极的第一导电类型的第三半导体层和与第二电极电连接的第二导电类型的第四半导体层。 第一半导体层和第一电极通过绝缘装置与第三半导体层和第三电极电隔离。

公开(公告)号：US5809052A

公开(公告)日：1998-09-15

申请号：US731750

申请日：1996-10-18

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/08

CPC分类号： H01S5/4031 ,  H01S5/0021 ,  H01S5/06216

摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0

摘要翻译： 一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。 半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高 当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。 在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

公开(公告)号：US5648295A

公开(公告)日：1997-07-15

申请号：US687938

申请日：1996-07-29

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。