公开(公告)号：US20090168819A1

公开(公告)日：2009-07-02

申请号：US11580579

申请日：2006-10-13

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/026 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06837 ,  H01S5/18311 ,  H01S5/2063 ,  H01S5/2081 ,  H01S5/423

摘要： A vertical-cavity surface-emitting laser diode (VCSEL) device, including a laser element portion formed on a substrate, the laser element portion comprising a multi-layer reflective mirror of a first conductivity type, an active layer, and a multi-layer reflective mirror of a second conductivity type, and a light absorbing heat converting region at a position thermally connected to the laser element portion on the substrate, the light absorbing heat converting region absorbing light and generating heat.

摘要翻译： 一种垂直腔表面发射激光二极管（VCSEL）器件，包括形成在衬底上的激光元件部分，激光元件部分包括第一导电类型的多层反射镜，有源层和多层 第二导电类型的反射镜，以及在与基板上的激光元件部分热连接的位置处的光吸收热转换区域，光吸收热转换区域吸收光并产生热量。

公开(公告)号：US5990494A

公开(公告)日：1999-11-23

申请号：US827358

申请日：1997-03-27

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  F21S2/00 ,  F21V23/00 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/16 ,  H01L33/26 ,  H01L33/58 ,  H01L33/60 ,  H01S5/00 ,  H01S5/02 ,  H04N1/04 ,  H01L33/00

CPC分类号： B41J2/45

摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.

摘要翻译： 描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。 根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是 设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US20100208764A1

公开(公告)日：2010-08-19

申请号：US12542806

申请日：2009-08-18

申请人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

发明人： Hiromi Otoma ,  Jun Sakurai ,  Ryoji Ishii

IPC分类号： H01S5/18

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/185

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 形成在半导体衬底上并包括第一导电类型的半导体多层的下反射器; 上反射器，其形成在所述半导体衬底上并且包括第二导电类型的半导体多层; 位于下反射器和上反射器之间的有源区; 介于所述下反射器和所述上反射器之间并且具有在垂直于光轴的平面中具有各向异性形状的导电区域的电流限制层; 以及电极，其形成在上反射体上并具有通过该开口射出激光束的开口，该开口在各向异性形状的方向上具有不同的边缘形状。

公开(公告)号：US07154927B2

公开(公告)日：2006-12-26

申请号：US10826354

申请日：2004-04-19

申请人： Hiromi Otoma

发明人： Hiromi Otoma

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432 ,  H01S2301/166 ,  H01S2301/173

摘要： A surface emitting semiconductor laser includes: a semiconductor substrate; a first semiconductor multilayer reflection film of a first conduction type on the semiconductor substrate; a second semiconductor multilayer reflection film of a second conduction type; an active region and a current confining layer interposed between the first and second semiconductor multilayer reflection films; and a low-resistance layer interposed between the current confining layer and the active region.

摘要翻译： 表面发射半导体激光器包括：半导体衬底; 半导体衬底上的第一导电类型的第一半导体多层反射膜; 第二导电类型的第二半导体多层反射膜; 插入在第一和第二半导体多层反射膜之间的有源区和电流限制层; 以及介于电流限制层和有源区之间的低电阻层。

公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5394425A

公开(公告)日：1995-02-28

申请号：US201342

申请日：1994-02-24

申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

公开(公告)号：US07098059B2

公开(公告)日：2006-08-29

申请号：US11109753

申请日：2005-04-20

申请人： Hiromi Otoma ,  Jun Sakurai

发明人： Hiromi Otoma ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  G01R31/26

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18358 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

摘要翻译： 表面发射半导体激光器包括衬底，形成在衬底上的第一半导体多层反射器，形成在第一半导体多层反射器上的有源区，形成在有源区上的第二半导体多层反射器，介于第一和第二半导体层之间的电流限制层， 第二半导体多层反射器，并且部分地包括氧化物区域，以及形成在由半导体层提供的涂覆表面上的绝缘层，该半导体层是第一半导体多层反射器的一部分，并且在去除表面氧化层之后露出。

公开(公告)号：US07058104B2

公开(公告)日：2006-06-06

申请号：US10375110

申请日：2003-02-28

申请人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

发明人： Nobuaki Ueki ,  Hiromi Otoma ,  Akemi Murakami ,  Akira Sakamoto

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01L2224/48463 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18344

摘要： A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.

公开(公告)号：US5533042A

公开(公告)日：1996-07-02

申请号：US317594

申请日：1994-10-03

申请人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

发明人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

IPC分类号： G11B7/09 ,  G11B7/125 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18 ,  G11B7/00

CPC分类号： G11B7/127 ,  G11B7/0901 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/06243 ,  H01S5/4031

摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。