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162 条记录 (耗时 0.035 秒)

    Substrate Processing Apparatus
    22.
    发明申请
    Substrate Processing Apparatus 审中-公开
    基板加工装置

    公开(公告)号：US20100163179A1

    公开(公告)日：2010-07-01

    申请号：US12086634

    申请日：2006-12-12

    申请人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

    发明人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

    IPC分类号： B08B13/00

    CPC分类号： H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

    摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

    摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部 的未经表面氧化处理的Al或Al合金。 室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

    Button as Well as Button Body and Fixture for Such a Button
    23.
    发明申请
    Button as Well as Button Body and Fixture for Such a Button 有权
    按钮以及按钮体和这种按钮的夹具

    公开(公告)号：US20100146741A1

    公开(公告)日：2010-06-17

    申请号：US12635891

    申请日：2009-12-11

    申请人： Daisuke Hayashi

    发明人： Daisuke Hayashi

    IPC分类号： A44B1/28

    CPC分类号： A44B1/34

    摘要： The present invention relates to a button comprising a button body and a fixture for fixing said button body to a support from the opposite side to the button body with the support therebetween, said button body having an insert hole defined by a wall, for the fixture to be inserted therein, and at least one protrusion for fixing on said support.According to the invention, there is provided a gap between said protrusion and said wall defining said insert hole. (FIG. 1A)

    摘要翻译： 按钮本体技术领域本发明涉及一种钮扣，包括按钮体和固定装置，用于将按钮主体固定到与按钮主体相对的一侧的支撑体上，其中支撑件在它们之间，所述按钮主体具有由壁限定的插入孔， 以及至少一个用于固定在所述支撑上的突出部。 根据本发明，提供了所述突起和限定所述插入孔的所述壁之间的间隙。 （图1A）

    Magnetron plasma processing apparatus
    24.
    发明授权
    Magnetron plasma processing apparatus 有权
    磁控管等离子体处理装置

    公开(公告)号：US07686918B2

    公开(公告)日：2010-03-30

    申请号：US11016997

    申请日：2004-12-21

    申请人： Hidenori Sato ,  Daisuke Hayashi

    发明人： Hidenori Sato ,  Daisuke Hayashi

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3405

    摘要： A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.

    摘要翻译： 磁控管等离子体处理装置具有插入处理空间和排气口之间的挡板，以将等离子体限制在处理室中的处理空间中。 挡板具有允许处理空间和排气口彼此连通的通孔。 挡板沿着板所在的位置处的磁场的磁力线设置。

    PROJECTOR
    25.
    发明申请
    PROJECTOR 有权
    投影机

    公开(公告)号：US20100039621A1

    公开(公告)日：2010-02-18

    申请号：US12507191

    申请日：2009-07-22

    申请人： Daisuke Hayashi ,  Kanji Yoshida

    发明人： Daisuke Hayashi ,  Kanji Yoshida

    IPC分类号： G03B21/14

    CPC分类号： G03B33/12 ,  G02B5/005 ,  G02B27/1046 ,  G02B27/283 ,  G03B21/14 ,  G03B21/16 ,  G03B21/2073 ,  G03B21/208 ,  H04N9/3167

    摘要： A projector includes: a light source; a polarization conversion element array having an entrance surface on which an effective entrance area and an ineffective entrance area are disposed to form stripes; a modulation device adapted to modulate a linearly polarized light beam emitted from the polarization conversion element array in accordance with an image signal; a projection device adapted to project the modulated light beam; a first light shielding section, a part of the entrance surface being provided with the first light shielding section adapted to shield a part of the incident light beam to the effective entrance area; and a first opening section, the first opening section being another area of the entrance surface than the part provided with the first light shielding section, at least a part of the first opening section reaches an end of the entrance surface.

    摘要翻译： 投影仪包括：光源; 偏振转换元件阵列，具有入射面，有效入射面积和无效入射面积设置在入射面上，形成条纹; 调制装置，其适于根据图像信号调制从偏振转换元件阵列发射的线偏振光束; 适于投影调制光束的投影装置; 第一遮光部，所述入射面的一部分设置有所述第一遮光部，所述第一遮光部适于将所述入射光的一部分遮蔽到所述有效入射区域; 以及第一开口部，所述第一开口部是与设置有所述第一遮光部的部分相比所述入射面的另一区域，所述第一开口部的至少一部分到达所述入射面的端部。

    Processing apparatus and gas discharge suppressing member
    26.
    发明授权
    Processing apparatus and gas discharge suppressing member 有权
    处理装置和气体放电抑制构件

    公开(公告)号：US07622017B2

    公开(公告)日：2009-11-24

    申请号：US10856797

    申请日：2004-06-01

    申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

    发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

    IPC分类号： C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

    摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

    摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。

    Processing system
    28.
    再颁专利
    Processing system 失效
    处理系统

    公开(公告)号：USRE39939E1

    公开(公告)日：2007-12-18

    申请号：US11055788

    申请日：1998-04-08

    申请人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

    发明人： Nobuyuki Okayama ,  Hidehito Saegusa ,  Jun Ozawa ,  Daisuke Hayashi ,  Naoki Takayama ,  Koichi Kazama

    IPC分类号： H01L21/306

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32477 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/532 ,  Y10T29/53204

    摘要： A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

    摘要翻译： 处理系统具有具有与绝缘构件的外部对应的形状的气体排出孔的上部电极。 绝缘构件由聚（醚醚酮）树脂，聚酰亚胺树脂，聚（醚酰亚胺）树脂等形成。 每个绝缘构件在其外表面具有台阶，并且内部纵向通孔锥形以向处理室扩展。 绝缘构件被压在气体排放孔中，使台阶与气体排放孔的侧壁中形成的肩部接触。 每个绝缘构件的一部分安装在气体排放孔中，从面向基座的上部电极的表面突出。

    Focus ring and plasma processing apparatus
    29.
    发明申请
    Focus ring and plasma processing apparatus 失效
    对焦环和等离子体处理装置

    公开(公告)号：US20070169891A1

    公开(公告)日：2007-07-26

    申请号：US10933383

    申请日：2004-09-03

    申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

    发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

    IPC分类号： C23F1/00

    CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

    摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

    摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。