公开(公告)号：US20170034922A1

公开(公告)日：2017-02-02

申请号：US15222976

申请日：2016-07-29

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Shih-Hao Wang ,  Yi-Chen Lin

IPC: H05K3/30

CPC classification number: G02B6/34 ,  G01J1/0209 ,  G01J1/0407 ,  G01J1/0422 ,  G02B6/12004 ,  G02B6/305 ,  G02B6/4206 ,  G02B6/4214 ,  G02B6/4298 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/0425 ,  H01S5/12 ,  H04B10/079 ,  H05K3/30 ,  H05K2203/0147 ,  H05K2203/163

Abstract: A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate. An electronic device transfer module having detecting elements is also provided.

Abstract translation: 提供了包括以下步骤的电子设备的检测方法。 检测方法包括：提供电子器件基板; 通过电子设备传送模块附接电子设备基板的电子设备的一部分，其中电子设备传送模块包括与电子设备的该部分对应的多个检测元件，并且每个检测元件包括至少一对 的电极; 检测所述至少一对电极之间的传导路径是否产生，以确认所述电子设备的所述部分与所述接触目标之间的接触状态; 以及将附接到电子设备传送模块的电子设备的部分传送到目标基板。 还提供了一种具有检测元件的电子设备传送模块。

公开(公告)号：US20170031104A1

公开(公告)日：2017-02-02

申请号：US15222961

申请日：2016-07-29

Applicant: Industrial Technology Research Institute

Inventor： Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Chun-Hsing Lee ,  Kai-Ning Ku

IPC: G02B6/34 ,  G01J1/02 ,  G01J1/04 ,  G02B6/42

CPC classification number: G02B6/34 ,  G01J1/0209 ,  G01J1/0407 ,  G01J1/0422 ,  G02B6/12004 ,  G02B6/305 ,  G02B6/4206 ,  G02B6/4214 ,  G02B6/4298 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/0425 ,  H01S5/12 ,  H04B10/079 ,  H05K3/30 ,  H05K2203/0147 ,  H05K2203/163

Abstract: An optical receiver including a photodetector and a waveguide is provided. The photodetector includes a plurality of photosensitive regions arranged in an array. The waveguide is disposed on the photodetector and includes a plurality of gratings, a plurality of optical channels, and a plurality of light-deflection elements. The gratings are respectively adapted to collect light beams incident on the waveguide at different angles. The optical channels are adapted to propagate the light beams collected by the gratings. The light-deflection elements are disposed on transmission paths of the light beams propagating in the optical channels and are located above the photosensitive regions. The light-deflection elements are adapted to propagate the light beams propagating in the optical channels to the photosensitive regions. An optical transceiver is also provided.

Abstract translation: 提供了一种包括光电检测器和波导的光学接收器。 光电检测器包括以阵列排列的多个感光区域。 波导设置在光电检测器上，并且包括多个光栅，多个光通道和多个光偏转元件。 光栅分别适于以不同的角度收集入射在波导上的光束。 光通道适于传播由光栅收集的光束。 光偏转元件设置在光通道中传播的光束的传输路径上，并位于光敏区域之上。 光偏转元件适于将在光通道中传播的光束传播到感光区域。 还提供光收发器。

公开(公告)号：US09112077B1

公开(公告)日：2015-08-18

申请号：US14263978

申请日：2014-04-28

Applicant: Industrial Technology Research Institute

Inventor： Chen-Zi Liao ,  Chih-Wei Hu ,  Hsun-Chih Liu ,  Yen-Hsiang Fang ,  Rong Xuan

IPC: H01L23/52 ,  H01L29/06 ,  H01L33/00 ,  H01L21/00 ,  H01L33/04

CPC classification number: H01L33/04 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure including a silicon substrate, a nucleation layer and a plurality of multi-layer sets is provided. The nucleation layer is disposed on the silicon substrate. The multi-layer sets are stacked over the nucleation layer, and each of the multi-layer sets includes a plurality of first sub-layers and a plurality of second sub-layers stacked alternately. A material of the first sub-layers and the second sub-layers includes Al-containing III-V group compound, wherein an average content of aluminum of the multi-layer sets decreases as a minimum distance between each of the multi-layer sets and the silicon substrate increases, and an aluminum content of the first sub-layers is different from an aluminum content of the second sub-layers.

Abstract translation: 提供了包括硅衬底，成核层和多个多层组的半导体结构。 成核层设置在硅衬底上。 多层组层叠在成核层上，多层组中的每一层包括交替堆叠的多个第一子层和多个第二子层。 第一子层和第二子层的材料包括含Al的III-V族化合物，其中多层组的铝的平均含量作为多层组和 硅衬底增加，并且第一子层的铝含量不同于第二子层的铝含量。

公开(公告)号：US08779468B2

公开(公告)日：2014-07-15

申请号：US13726648

申请日：2012-12-26

Applicant: Industrial Technology Research Institute

Inventor： Yen-Hsiang Fang ,  Chien-Pin Lu ,  Chen-Zi Liao ,  Rong Xuan ,  Yi-Keng Fu ,  Chih-Wei Hu ,  Hsun-Chih Liu

IPC: H01L21/02

CPC classification number: H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/267

Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.

Abstract translation: 提供了包括硅衬底，成核层，不连续缺陷阻挡层，缓冲层和氮化物半导体层的氮化物半导体结构。 成核层设置在硅基板上，其中成核层具有缺陷密度d1。 成核层的一部分被不连续的缺陷阻挡层覆盖。 缓冲层设置在不连续缺陷阻挡层和未被不连续缺陷阻挡层覆盖的成核层的一部分。 氮化物半导体层设置在缓冲层上。 在氮化物半导体层和缓冲层之间的界面上方约1微米的位置处，氮化物半导体层的缺陷密度d2与成核层的缺陷密度d1的比率小于或等于约0.5。

公开(公告)号：US11855062B2

公开(公告)日：2023-12-26

申请号：US17974531

申请日：2022-10-27

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Chia-Hsin Chao ,  Yen-Hsiang Fang

IPC: H01L25/18 ,  H01L27/12 ,  H01L27/15

CPC classification number: H01L25/18 ,  H01L27/1259 ,  H01L27/156

Abstract: A method for manufacturing a display array includes the following steps: providing a substrate and forming a semiconductor stacked layer on the substrate; forming an insulating layer and a plurality of electrode pads on an outer surface of the semiconductor stacked layer, the insulating layer and the electrode pads directly contacting the semiconductor stacked layer, wherein the insulating layer has a plurality of openings spaced apart from each other; and transferring the semiconductor stacked layer, the insulating layer and the electrode pads from the substrate to a driving backplane, wherein the electrode pads are respectively electrically connected to the driving backplane through the openings of the insulating layer to form a plurality of light emitting regions in the semiconductor stacked layer as the electrode pads and the semiconductor stacked layer are energized by the driving backplane.

公开(公告)号：US20220036776A1

公开(公告)日：2022-02-03

申请号：US17483812

申请日：2021-09-24

Applicant: Industrial Technology Research Institute

Inventor： Chia-Hsin Chao ,  Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Po-Hsun Wang ,  Li-Chun Huang

IPC: G09F9/302 ,  G09G3/32 ,  H01L33/62 ,  H01L27/15 ,  H01L27/142

Abstract: A spliced display including a transparent substrate, a plurality of micro (light-emitting diodes) LEDs, and a plurality of light sensors is provided. The transparent substrate has a display surface and a back surface opposite to each other. The driving backplanes are disposed on the back surface of the transparent substrate to be spliced with each other. The micro LEDs are disposed on the driving backplanes respectively and located between the micro LEDs and the transparent substrate. Each of the driving backplanes is corresponding to parts of the micro LEDs. The light sensors are disposed on the transparent substrate and located between the driving backplanes and the transparent substrate. Each of the light sensors is adjacent to at least two of the micro LEDs, and at least one of the at least two of the micro LEDs is adjacent to two of the light sensor.

公开(公告)号：US11227787B2

公开(公告)日：2022-01-18

申请号：US16026080

申请日：2018-07-03

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Yih-Der Guo ,  Yen-Hsiang Fang ,  Yao-Jun Tsai ,  Yi-Chen Lin

IPC: H01L21/683 ,  H01L21/67

Abstract: A transfer support adapted to contact a plurality of elements is provided. The transfer support has a first surface, a second surface opposite to the first surface, a recess located on the second surface, a plurality of platforms protruded from the first surface, a plurality of supporting pillars distributed in the recess and a plurality of through holes. The platforms have carry surfaces adapted to contact the plurality of elements. The through holes extend from the carry surfaces of the platforms to the recess, and two of the adjacent supporting pillars are spaced apart from each other to form an air passage. In addition, a transfer module is also provided.

公开(公告)号：US20210091265A1

公开(公告)日：2021-03-25

申请号：US17113114

申请日：2020-12-07

Applicant: Industrial Technology Research Institute

Inventor： Yih-Der Guo ,  Ming-Hsien Wu ,  Yi-Chen Lin ,  Yao-Jun Tsai ,  Yen-Hsiang Fang

IPC: H01L33/22 ,  H01L33/62 ,  H01L33/38 ,  H01L33/32 ,  H01L27/15

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

公开(公告)号：US20200042810A1

公开(公告)日：2020-02-06

申请号：US16596770

申请日：2019-10-09

Applicant: Industrial Technology Research Institute

Inventor： Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Ming-Hsien Wu

IPC: G06K9/00 ,  H04N5/33

Abstract: A biometric device includes a substrate, an image sensor, an optical layer and at least one infrared light emitting diode (IR LED). The image sensor is disposed on the substrate. The optical layer is disposed on the image sensor and includes a diffraction pattern. The IR LED is disposed on the diffraction pattern of the optical layer. The optical layer is located between the IR LED and the image sensor.

公开(公告)号：US10541233B2

公开(公告)日：2020-01-21

申请号：US15935069

申请日：2018-03-26

Applicant: Industrial Technology Research Institute ,  Macroblock, Inc.

Inventor： Po-Hsun Wang ,  Chia-Hsin Chao ,  Ming-Hsien Wu ,  Yen-Hsiang Fang ,  Chien-Chung Lin ,  Ming-Jer Kao ,  Feng-Pin Chang

IPC: H01L33/54 ,  H01L25/075 ,  H01L23/538 ,  H01L33/62 ,  H01L33/60

Abstract: A display device including a circuit substrate, a plurality of pixels, and a light-shielding layer is provided. The pixels include a plurality of light-emitting elements. The light-emitting elements are disposed on the circuit substrate and are electrically connected to the circuit substrate. The light-emitting elements in the pixels are arranged along an arrangement direction. The light-shielding layer is disposed on the circuit substrate and has a plurality of pixel apertures. The pixels are disposed in a corresponding pixel aperture. The light-shielding layer includes a plurality of first light-shielding patterns extending in the arrangement direction and a plurality of second light-shielding patterns connected to the first light-shielding patterns. The extending direction of the second light-shielding patterns is different from the extending direction of the first light-shielding patterns. A thickness of the first light-shielding patterns is greater than or substantially equal to a thickness of the second light-shielding patterns.