公开(公告)号：US20180226524A1

公开(公告)日：2018-08-09

申请号：US15425717

申请日：2017-02-06

Applicant: International Business Machines Corporation

Inventor： Priscilla D. Antunez ,  Douglas M. Bishop ,  Gloria W. Fraczak ,  Oki Gunawan ,  Richard A. Haight

IPC: H01L31/0224 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

Abstract: Improved high work function back contacts for solar cells are provided. In one aspect, a method of forming a solar cell includes: forming a completed solar cell having a substrate coated with an electrically conductive material, an absorber disposed on the electrically conductive material, a buffer layer disposed on the absorber, a transparent front contact disposed on the buffer layer, and a metal grid disposed on the transparent front contact; removing the substrate and the electrically conductive material using exfoliation, exposing a backside surface of the solar cell; depositing a high work function material onto the back side surface of the solar cell; and depositing a back contact onto the high work function material. A solar cell formed by the present techniques is also provided. Yield of the exfoliated device can be improved by removing bubbles from adhesive used for exfoliation and/or forming contact pads to access the metal grid.

公开(公告)号：US10008618B2

公开(公告)日：2018-06-26

申请号：US15658790

申请日：2017-07-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard A. Haight ,  James B. Hannon ,  Satoshi Oida

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0392

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/0445 ,  H01L31/072 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/50

Abstract: A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

公开(公告)号：US20170292825A1

公开(公告)日：2017-10-12

申请号：US15480735

申请日：2017-04-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard A. Haight ,  James B. Hannon ,  Rudolf M. Tromp

IPC: G01B9/02 ,  G01B11/14

CPC classification number: G01B9/02 ,  G01B11/026 ,  G01B11/0608 ,  G01B11/14 ,  G03F7/70775

Abstract: Methods and systems for measuring a distance include measuring a first interference pattern between a lens and a target surface using a light source at a first wavelength. A second interference pattern is measured between the lens and the target surface using a light source at a second wavelength, different from the first wavelength. An absolute measurement of a distance between the lens and the target surface is determined based on the first interference pattern and the second interference pattern.

公开(公告)号：US20170194518A1

公开(公告)日：2017-07-06

申请号：US14984512

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Oki Gunawan ,  Richard A. Haight ,  Ravin Mankad

IPC: H01L31/0224 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0326 ,  H01L31/022425 ,  H01L31/072 ,  Y02E10/50

Abstract: Techniques for forming an ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO2, ZnO, SnO, ZnSnO, Ga2O3, and combinations thereof. A photovoltaic device is also provided.

公开(公告)号：US20170179169A1

公开(公告)日：2017-06-22

申请号：US15299612

申请日：2016-10-21

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Richard A. Haight ,  James B. Hannon ,  Teodor K. Todorov

IPC: H01L27/142 ,  H02S40/38 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/048

CPC classification number: H02J3/383 ,  H01L27/142 ,  H01L31/053 ,  H01L31/186 ,  H02J3/46 ,  H02J7/345 ,  H02J7/35 ,  H02S40/38 ,  H05K1/181 ,  H05K1/183 ,  H05K2201/10143 ,  Y02E10/566 ,  Y02P70/611

Abstract: Aspects relate to a system and a method of manufacturing an integrated device. The method includes providing a circuit board, configuring an upper surface of the circuit board as a substrate, integrally depositing photovoltaic device layers that include at least a semi-conductor absorber layer, a buffer layer, and a top electrode layer on the upper surface of the circuit board to form a photovoltaic device using the upper surface of the circuit board as a photovoltaic device substrate, wherein the buffer layer is integrally deposited between the semi-conductor absorber layer and the top electrode, and electrically connecting the photovoltaic device to one or more on-board electronic components.

公开(公告)号：US09608141B1

公开(公告)日：2017-03-28

申请号：US14968252

申请日：2015-12-14

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/07

CPC classification number: H01L31/1864 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0326 ,  H01L31/0327 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

Abstract: A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

公开(公告)号：US09570915B1

公开(公告)日：2017-02-14

申请号：US14977700

申请日：2015-12-22

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Richard A. Haight ,  James B. Hannon ,  Teodor K. Todorov

IPC: H02J1/10 ,  H02J3/38 ,  H02J7/34 ,  H02S40/38 ,  H05K1/18 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/18 ,  H01L31/02 ,  H05K3/32 ,  H05K1/16 ,  H05K3/00 ,  H05K3/28 ,  H01L31/0203 ,  H02J7/35

CPC classification number: H01L27/142 ,  H01L31/053 ,  H01L31/186 ,  H02J3/383 ,  H02J3/46 ,  H02J7/345 ,  H02J7/35 ,  H02S40/38 ,  H05K1/181 ,  H05K1/183 ,  H05K2201/10143 ,  Y02E10/566 ,  Y02P70/611

Abstract: Aspects relate to an integrated system that is electrically powered. The integrated system includes a circuit board and a photovoltaic device. The circuit board includes one or more on-board electronic components and an upper surface configured as a substrate. The photovoltaic device is integrally deposited on the upper surface of the circuit board and electrically connected to the one or more on-board electronic components, wherein the upper surface of the circuit board is a photovoltaic device substrate.

Abstract translation: 方面涉及电力供应的集成系统。 集成系统包括电路板和光伏器件。 电路板包括一个或多个车载电子部件和被配置为基板的上表面。 光电器件整体沉积在电路板的上表面上并电连接到一个或多个车载电子部件，其中电路板的上表面是光电器件基板。

公开(公告)号：US20160141434A1

公开(公告)日：2016-05-19

申请号：US14540986

申请日：2014-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Liang-Yi Chang ,  Talia S. Gershon ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0749

CPC classification number: H01L31/065 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02631 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/0326 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/50

Abstract: A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

Abstract translation: 提供了一种混合气相 - 溶液相CZT（S，Se）生长技术。 一方面，在基材上形成kesterite吸收体材料的方法包括以下步骤：使用气相沉积工艺在基材上沉积第一泡沫材料层，其中所述第一Kesterite材料包括Cu，Zn，Sn， 和S和Se中的至少一个; 退火第一泡沸石材料以使第一泡壳材料结晶; 以及使用溶液相沉积工艺在与所述基材相对的所述第一kesterite材料的一侧上沉积第二Kesterite材料层，其中所述第二Kesterite材料包括Cu，Zn，Sn和S和Se中的至少一种，其中所述 第一凯斯特石料和第二泡壳石材料在基材上形成吸收材料的多层叠层。 还提供了一种光电器件及其形成方法。

公开(公告)号：US20150000741A1

公开(公告)日：2015-01-01

申请号：US13930975

申请日：2013-06-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/075 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0328 ,  H01L31/077 ,  H01L31/18 ,  Y02E10/541

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Abstract translation: 光伏器件包括第一接触和混合吸收层。 混合吸收层包括硫族化物层和与硫族化物层接触的半导体层。 在吸收层上形成缓冲层，在缓冲层上形成透明导电接触层。

公开(公告)号：US11355661B2

公开(公告)日：2022-06-07

申请号：US16595959

申请日：2019-10-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L31/075 ,  H01L31/032 ,  H01L31/0328 ,  H01L31/077 ,  H01L31/18

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.