公开(公告)号：US08461611B2

公开(公告)日：2013-06-11

申请号：US13208658

申请日：2011-08-12

申请人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

公开(公告)号：US20120049155A1

公开(公告)日：2012-03-01

申请号：US13030440

申请日：2011-02-18

申请人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。

公开(公告)号：US20110198633A1

公开(公告)日：2011-08-18

申请号：US12871285

申请日：2010-08-30

申请人： Koichi TACHIBANA ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/34

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

公开(公告)号：US20110198583A1

公开(公告)日：2011-08-18

申请号：US12873662

申请日：2010-09-01

申请人： Hajime NAGO ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

公开(公告)号：US09065003B2

公开(公告)日：2015-06-23

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US08809085B2

公开(公告)日：2014-08-19

申请号：US13222238

申请日：2011-08-31

申请人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

发明人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/22

CPC分类号： H01L33/0079 ,  H01L33/22

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

公开(公告)号：US08728237B2

公开(公告)日：2014-05-20

申请号：US12874594

申请日：2010-09-02

申请人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/007

摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0

摘要翻译： 一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

公开(公告)号：US08680508B2

公开(公告)日：2014-03-25

申请号：US13222500

申请日：2011-08-31

申请人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3407 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

公开(公告)号：US08674338B2

公开(公告)日：2014-03-18

申请号：US12871285

申请日：2010-08-30

申请人： Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。 最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。 最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。 最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。 最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。 （wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

公开(公告)号：US08658450B2

公开(公告)日：2014-02-25

申请号：US12875560

申请日：2010-09-03

申请人： Hajime Nago ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

发明人： Hajime Nago ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC分类号： H01L21/00 ,  H01L21/20

CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x

摘要翻译： 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1×x <0.5），其厚度不小于20纳米，不大于50纳米。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。