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21.发明授权Test pattern and method of evaluating the transfer properties of a test pattern 有权测试图案的测试模式和评估测试图案的转移特性的方法公开(公告)号：US07354684B2
公开(公告)日：2008-04-08
申请号：US11713962
申请日：2007-03-05
申请人： Uwe Dersch , Henning Haffner
发明人： Uwe Dersch , Henning Haffner
CPC分类号： G03F7/70616 , G03F1/36 , G03F1/44 , G03F7/70433
摘要： A test pattern or set of patterns, a method of evaluating the transfer properties of the pattern, and a method of determining a parameter of a transfer process (e.g., imaging process) making use of the test pattern is provided. With the test pattern, the impact of line edge roughness on a transferred pattern may be analyzed. For example, the test pattern may be based upon a lines/spaces pattern, wherein periodic structures having a well-defined period and amplitude are adjacent to the lines. A photomask is provided with the test pattern and an image of the pattern is obtained. Edges of the image are determined and, therefrom, a set of edge position data are obtained. Edge position data are fitted to a straight line to determine edge position residuals. An amplitude spectrum is calculated dependent upon spatial frequencies to obtain a amplitude/spatial frequency relationship. A ratio of determined maximum is formed.
摘要翻译： 提供了一种测试图案或一组图案，评估图案的转印特性的方法以及使用该测试图案确定转印处理（例如，成像处理）的参数的方法。 利用测试图案，可以分析线边缘粗糙度对转移图案的影响。 例如，测试图案可以基于线/间隔图案，其中具有明确定义的周期和幅度的周期结构与线相邻。 光掩模被提供有测试图案并且获得图案的图像。 确定图像的边缘，由此获得一组边缘位置数据。 边缘位置数据拟合到一条直线上以确定边缘位置残差。 根据空间频率计算振幅谱，以获得幅度/空间频率关系。 形成确定的最大值的比率。
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22.发明申请公开(公告)号：US20070226674A1
公开(公告)日：2007-09-27
申请号：US11390982
申请日：2006-03-27
申请人： Henning Haffner , Lars Liebmann , Donald Samuels , Steven Scheer
发明人： Henning Haffner , Lars Liebmann , Donald Samuels , Steven Scheer
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： System and Method for Semiconductor Device Fabrication Using Modeling System and method for using adjustment patterns as well as physical parameters as targets to control mask structure dimensions using optical proximity correction. A preferred embodiment includes defining targets based on definition rules and adjusting mask layer structures based on the targets. The targets comprise structures that are visible in the reproduced pattern as well as targets that affect geometric properties. The targets that affect geometric properties include target sacrificial structures that are selected from one or more of the following groups: actual sacrificial structures that are visible only in an intermediate exposure of the reproduced pattern, virtual sacrificial structures of a mask layer having at least one dimension smaller than a minimum dimension required for resolution, and virtual sacrificial structures not part of the reproduced pattern. Furthermore, targets that affect physical properties, such as light intensity, can be defined and utilized in the adjusting.
摘要翻译： 使用建模系统的半导体器件制造的系统和方法以及使用调整图案以及物理参数作为目标的方法来使用光学邻近校正来控制掩模结构尺寸。 优选实施例包括基于定义规则定义目标并且基于目标调整掩模层结构。 目标包括在再现模式中可见的结构以及影响几何特性的目标。 影响几何特性的目标包括从以下一个或多个组中选择的靶牺牲结构：仅在再现图案的中间曝光中可见的实际牺牲结构，具有至少一个维度的掩模层的虚拟牺牲结构 小于分辨率所需的最小尺寸，虚拟牺牲结构不是再现模式的一部分。 此外，可以在调整中定义和利用影响物理性质如光强度的目标。
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公开(公告)号：US06631511B2
公开(公告)日：2003-10-07
申请号：US09949511
申请日：2001-09-07
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/705
摘要： A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.
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公开(公告)号：US08865592B2
公开(公告)日：2014-10-21
申请号：US12364804
申请日：2009-02-03
申请人： Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
发明人： Jiang Yan , Henning Haffner , Frank Huebinger , SunOo Kim , Richard Lindsay , Klaus Schruefer
IPC分类号： H01L21/44 , H01L23/525 , H01L21/28 , H01L29/49
CPC分类号： H01L27/0617 , H01L21/28088 , H01L23/5256 , H01L29/0653 , H01L29/4958 , H01L29/4966 , H01L2924/0002 , H01L2924/00
摘要： A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
摘要翻译： 优选实施例包括制造熔丝元件的方法，该方法包括在半导体结构上形成多晶硅层，用碳或氮掺杂多晶硅层，在多晶硅层上沉积金属; 以及退火所述金属和多晶硅层以在所述多晶硅层的上部形成硅化物。
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25.发明授权公开(公告)号：US08161421B2
公开(公告)日：2012-04-17
申请号：US12168383
申请日：2008-07-07
IPC分类号： G06F17/50
摘要： A method of training an Optical Proximity Correction (OPC) model comprises symmetrizing a complex design to be a test pattern having orthogonal symmetry. Symmetrizing may comprise establishing a axis of symmetry passing through the design, thereby dividing the design into two portions; deleting one of the two portions; and mirror-imaging the other of the two portions about the axis of symmetry. The design may be centered.
摘要翻译： 训练光学邻近校正（OPC）模型的方法包括将复杂设计对称为具有正交对称性的测试图案。 对称可以包括建立通过设计的对称轴，从而将设计分成两部分; 删除两部分之一; 并且围绕对称轴对两个部分中的另一个进行镜像成像。 设计可能居中。
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公开(公告)号：US08078998B2
公开(公告)日：2011-12-13
申请号：US12839750
申请日：2010-07-20
申请人： Henning Haffner , Manfred Eller , Richard Lindsay
发明人： Henning Haffner , Manfred Eller , Richard Lindsay
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/00 , G06F2217/12 , H01L21/0334 , H01L21/28123 , H01L21/823425 , H01L21/823437 , H01L27/0207 , H01L27/082 , H01L27/085 , H01L27/088 , H01L29/6659 , H01L29/7833 , Y10T29/41
摘要： Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are dummy electrodes. Based on the location of these dummy electrodes, selected dummy electrodes are removed using a second mask. The use of the method provides greater flexibility in tailoring individual devices for different objectives.
摘要翻译： 公开了集成电路及其制造和设计方法。 例如，制造方法包括使用第一掩模对形成多个第一和第二特征的栅极材料进行图案化。 第一特征形成半导体器件的栅电极，而第二特征是虚拟电极。 基于这些虚拟电极的位置，使用第二掩模去除所选择的虚拟电极。 该方法的使用提供了更大的灵活性，为不同的目标定制单个设备。
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公开(公告)号：US07975246B2
公开(公告)日：2011-07-05
申请号：US12191493
申请日：2008-08-14
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A method that purposely relaxes OPC algorithm constraints to allow post OPC mask shapes to elongate along one direction (particularly lowering the 1-dimensional MEEF in this direction with the result of an effectively overall lowered MEEF) to produce a pattern on wafer that is circular to within an acceptable tolerance.
摘要翻译： 一种意图放松OPC算法约束以允许OPC掩模形状沿着一个方向伸长的方法（特别是在该方向上降低1维MEEF，结果是有效地降低了MEEF），从而在晶圆上产生一个圆形到 在可接受的容限内。
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公开(公告)号：US07799486B2
公开(公告)日：2010-09-21
申请号：US11602886
申请日：2006-11-21
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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29.发明申请Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features 审中-公开通过引入各向异性分解辅助功能的接触层面罩布局公开(公告)号：US20090191468A1
公开(公告)日：2009-07-30
申请号：US12021527
申请日：2008-01-29
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： This disclosure includes a SRAF layout that minimizes the number of SRAFs required to reliably print contact shapes. A method is provided that reduces the number of necessary SRAF features on a mask, placing at least two elongated SRAF shapes on the mask such that the elongated SRAF shapes extend past at least one edge of a mask shape in at least one direction.
摘要翻译： 本公开包括SRAF布局，其最小化可靠地打印接触形状所需的SRAF的数量。 提供了一种减少掩模上必要的SRAF特征的数量的方法，在掩模上放置至少两个细长的SRAF形状，使得细长SRAF形状延伸经过至少一个方向上的掩模形状的至少一个边缘。
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公开(公告)号：US20090092926A1
公开(公告)日：2009-04-09
申请号：US11868374
申请日：2007-10-05
IPC分类号： G03C5/00
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/70 , G03F7/70208 , G03F7/70283
摘要： Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.
摘要翻译： 公开了多光束光刻系统和使用其的制造半导体器件的方法。 例如，该方法利用玻璃上镀铬的电场边界的不重合或分布在两个掩模上的相移掩模特征，用于优化光刻工艺窗口，旁瓣抑制或使用一个掩模的图案取向依赖的工艺窗口优化 背面有偏振旋转胶片。
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