公开(公告)号：US5093576A

公开(公告)日：1992-03-03

申请号：US670534

申请日：1991-03-15

申请人： John A. Edmond ,  Calvin H. Carter, Jr.

发明人： John A. Edmond ,  Calvin H. Carter, Jr.

IPC分类号： H01L31/10 ,  H01L31/0312 ,  H01L31/103

CPC分类号： H01L31/0312 ,  H01L31/103

摘要： A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocrystalline portion of silicon carbide adjacent the first portion and having the opposite conductivity type from the first portion; and a p-n junction between the adjacent first and second portions. The photodiode provides a dark current density of no more than about 1.times.10.sup.-9 amps/cm.sup.2 at a reverse bias of -1.0 volts and at temperatures of 170.degree. C. or less.

摘要翻译： 形成在碳化硅中的高灵敏度辐射检测光电二极管包括单晶碳化硅衬底; 第一单晶部分的碳化硅在衬底上并且具有第一导电类型; 与所述第一部分相邻并且具有与所述第一部分相反的导电类型的碳化硅的第二单晶部分; 以及相邻的第一和第二部分之间的p-n结。 光电二极管在-1.0伏的反向偏压和170℃或更低的温度下提供不超过约1×10 -9安培/ cm 2的暗电流密度。

公开(公告)号：US5027168A

公开(公告)日：1991-06-25

申请号：US399301

申请日：1989-08-28

申请人： John A. Edmond

发明人： John A. Edmond

IPC分类号： H01L33/00 ,  H01L33/16 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40

CPC分类号： H01L33/34 ,  H01L33/0008 ,  H01L33/343

摘要： The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.

摘要翻译： 本发明包括形成在碳化硅中并发射波长在约465-470纳米之间或在约455-460纳米之间或约424-428纳米之间的可见光的发光二极管。 二极管包括具有第一导电类型的α碳化硅的衬底和在衬底上具有与衬底相同的导电类型的α碳化硅的第一外延层。 α碳化硅的第二外延层位于第一外延层上，与第一层具有相反的导电类型，并与第一外延层形成p-n结。 在优选实施例中，第一外延层和第二外延层具有彼此充分不同的载流子浓度，使得在偏置条件下流过结的空穴电流和电子电流的量彼此不同，从而大部分重组事件 放置在所需的外延层中。

公开(公告)号：US20120305939A1

公开(公告)日：2012-12-06

申请号：US13586642

申请日：2012-08-15

申请人： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

发明人： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC分类号： H01L33/32

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以被制造成一系列交替的第一和第二子层。

公开(公告)号：US20100006883A1

公开(公告)日：2010-01-14

申请号：US12564458

申请日：2009-09-22

申请人： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

发明人： David B. Slater, JR. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。

公开(公告)号：US20080197378A1

公开(公告)日：2008-08-21

申请号：US11676715

申请日：2007-02-20

申请人： Hua-Shuang Kong ,  John A. Edmond

发明人： Hua-Shuang Kong ,  John A. Edmond

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

摘要： A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer.

摘要翻译： 公开了一种发光二极管，其包括在透明载体衬底上的p型III族氮化物层和n型III族氮化物层，其折射率低于邻近载体衬底的III族氮化物层 。 透明粘合剂层将透明基材连接到III族氮化物层，并且透明粘合剂的折射率低于III族氮化物层。 二极管包括对p型III族氮化物层和n型III族氮化物层的相应欧姆接触。

公开(公告)号：US6120600A

公开(公告)日：2000-09-19

申请号：US59649

申请日：1998-04-13

申请人： John A. Edmond ,  Hua-Shuang Kong

发明人： John A. Edmond ,  Hua-Shuang Kong

IPC分类号： H01L33/00 ,  H01L33/32 ,  C30B25/14

CPC分类号： H01L33/325 ,  H01L33/0025 ,  H01L33/007

摘要： A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.

摘要翻译： 发光二极管的双异质结构包括具有第一导电类型的氮化镓铝层; 具有相反导电类型的氮化镓铝层; 以及在氮化铝镓层之间的氮化镓的有源层，其中氮化镓层与II族受体和IV族给体共掺杂，其中一种掺杂剂以足以使得 氮化镓层为净导电型，使得有源层与具有相反导电类型的相邻的氮化铝层形成pn结。

公开(公告)号：US5592501A

公开(公告)日：1997-01-07

申请号：US309247

申请日：1994-09-20

申请人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong

发明人： John A. Edmond ,  Gary E. Bulman ,  Hua-Shuang Kong

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/32341 ,  H01S5/343 ,  H01S5/021 ,  H01S5/3201 ,  H01S5/3226 ,  H01S5/34333

摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.

摘要翻译： 公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和 碳化硅衬底。 缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是 零和一个，以及碳化硅与这种三元III族氮化物的合金。 在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。

公开(公告)号：US4918497A

公开(公告)日：1990-04-17

申请号：US284293

申请日：1988-12-14

申请人： John A. Edmond

发明人： John A. Edmond

IPC分类号： H01L33/00 ,  H01L33/34

CPC分类号： H01L33/34 ,  H01L33/0008

摘要： The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 475-480 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.

摘要翻译： 本发明包括形成在碳化硅中并发射波长在约475-480纳米之间或约455-460纳米之间或约424-428纳米之间的可见光的发光二极管。 二极管包括具有第一导电类型的α碳化硅的衬底和在衬底上具有与衬底相同的导电类型的α碳化硅的第一外延层。 α碳化硅的第二外延层位于第一外延层上，与第一层具有相反的导电类型，并与第一外延层形成p-n结。 在优选实施例中，第一外延层和第二外延层具有彼此充分不同的载流子浓度，使得在偏置条件下流过结的空穴电流和电子电流的量彼此不同，从而大部分重组事件 放置在所需的外延层中。

公开(公告)号：US07855459B2

公开(公告)日：2010-12-21

申请号：US11534317

申请日：2006-09-22

申请人： David B. Slater, Jr. ,  John A. Edmond ,  Hua-Shuang Kong

发明人： David B. Slater, Jr. ,  John A. Edmond ,  Hua-Shuang Kong

IPC分类号： H01L23/48

CPC分类号： H01L33/0079 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/838 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014

摘要： A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.

摘要翻译： 公开了一种半导体结构和接合方法，其包括在器件晶片和衬底晶片之间的器件晶片，衬底晶片和金属结合系统。 金属粘合系统包括金，锡和镍，并且包括金和锡的至少一个离散层，其为至少约88重量％的金。

公开(公告)号：US07611915B2

公开(公告)日：2009-11-03

申请号：US11688605

申请日：2007-03-20

申请人： David B. Slater, Jr. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

发明人： David B. Slater, Jr. ,  Bradley E. Williams ,  Peter S. Andrews ,  John A. Edmond ,  Scott T. Allen

IPC分类号： H01L21/00

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/01057 ,  H01L2924/12041 ,  H01L2924/00

摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。