-
公开(公告)号：US08643195B2
公开(公告)日：2014-02-04
申请号：US11428158
申请日：2006-06-30
IPC分类号： H01L29/40
CPC分类号： H01L33/0079 , H01L21/76251 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05666 , H01L2224/2908 , H01L2224/29111 , H01L2224/29144 , H01L2224/29155 , H01L2224/32245 , H01L2224/32503 , H01L2224/8381 , H01L2224/83825 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/01028 , H01L2924/00014 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the contact metal layer that predominates by weight in nickel and tin.
摘要翻译： 公开了一种半导体晶片，衬底和接合结构，其包括例如包括多个发光二极管的器件晶片，与发光二极管相对的器件晶片一侧的接触金属层（或多个层） 以及接触金属层上的结合金属系统，其重量在镍和锡中。
-
2.发明授权Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权具有用于半导体晶片和器件的阻挡层的镍锡键合系统公开(公告)号：US08247836B2
公开(公告)日：2012-08-21
申请号：US13035005
申请日：2011-02-25
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
3.发明申请Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices 有权用于半导体晶片和器件的带有阻挡层的镍锡焊接系统公开(公告)号：US20110180839A1
公开(公告)日：2011-07-28
申请号：US13035005
申请日：2011-02-25
IPC分类号： H01L33/32 , H01L23/492
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
4.发明授权Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权具有用于半导体晶片和器件的阻挡层的镍锡键合系统公开(公告)号：US07910945B2
公开(公告)日：2011-03-22
申请号：US11844127
申请日：2007-08-23
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
5.发明授权Modified gold-tin system with increased melting temperature for wafer bonding 有权用于晶片键合的改进的金锡系统具有增加的熔化温度公开(公告)号：US07855459B2
公开(公告)日：2010-12-21
申请号：US11534317
申请日：2006-09-22
IPC分类号： H01L23/48
CPC分类号： H01L33/0079 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/838 , H01L2224/94 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2224/83 , H01L2924/00 , H01L2924/01029 , H01L2924/01028 , H01L2924/00014
摘要： A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.
摘要翻译： 公开了一种半导体结构和接合方法，其包括在器件晶片和衬底晶片之间的器件晶片，衬底晶片和金属结合系统。 金属粘合系统包括金，锡和镍，并且包括金和锡的至少一个离散层，其为至少约88重量％的金。
-
公开(公告)号：US09490235B2
公开(公告)日：2016-11-08
申请号：US13224850
申请日：2011-09-02
IPC分类号： H01L33/54 , H01L25/075 , H01L25/16 , H01L33/52
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
-
公开(公告)号：US5338944A
公开(公告)日：1994-08-16
申请号：US125284
申请日：1993-09-22
CPC分类号： H01L33/34 , H01L33/0008 , H01S5/3095
摘要： A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
摘要翻译： 公开了一种以增加的亮度和效率在可见光谱的蓝色区域中发光的发光二极管。 发光二极管包括n型碳化硅衬底; n型碳化硅顶层; 以及n型衬底和n型顶层之间的发光p-n结结构。 p-n结结构由n型碳化硅和p型碳化硅的各部分形成。 二极管还包括在n型顶层和n型衬底之间的装置，用于将n型顶层耦合到发光pn结结构，同时防止n型顶层，p型 接合结构中的层，以及n型衬底。
-
公开(公告)号：US20080142820A1
公开(公告)日：2008-06-19
申请号：US11611600
申请日：2006-12-15
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L21/329
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.
摘要翻译： 公开了一种发光二极管，其包括由III族氮化物材料体系形成的发光有源结构，支撑III族氮化物活性结构的接合结构，以及支撑接合结构的安装基板。 安装基板包括反射具有由有源结构发射的频率的至少50％的光的材料。
-
公开(公告)号：US5739554A
公开(公告)日：1998-04-14
申请号：US436141
申请日：1995-05-08
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/007
摘要： A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
-
公开(公告)号：US09178121B2
公开(公告)日：2015-11-03
申请号：US11611600
申请日：2006-12-15
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.
摘要翻译： 公开了一种发光二极管，其包括由III族氮化物材料体系形成的发光有源结构，支撑III族氮化物活性结构的接合结构，以及支撑接合结构的安装基板。 安装基板包括反射具有由有源结构发射的频率的至少50％的光的材料。
-
-
-
-
-
-
-
-
-
搜索结果
54 条记录 (耗时 0.025 秒)
