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    SENSING DEVICE
    21.
    发明申请
    SENSING DEVICE 有权
    感应装置

    公开(公告)号：US20110180856A1

    公开(公告)日：2011-07-28

    申请号：US13122273

    申请日：2009-05-27

    申请人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    发明人： Chang Geun Ahn ,  Chan Woo Park ,  Jong Heon Yang ,  In Bok Baek ,  Chil Seong Ah ,  An Soon Kim ,  Tae Youb Kim ,  Gun Yong Sung

    IPC分类号： G01N27/403 ,  H01L29/772 ,  B82Y15/00

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

    摘要翻译： 提供了一种感测装置，其包括响应于流体中的特定官能团的反应性材料层（260），包括设置在绝缘层（230）上和下方的第一和第二电极的感测电容器（B），第一电极 设置在反应性材料层（260）下方的场效应晶体管，以及包括与感测电容器的第一电极连接的栅电极的场效应晶体管。 这里，反应性材料层（260）形成为导电三维结构以扩大表面积。 因此，感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度，这可能是通过相对于流体流动扩大导电三维结构的表面积而引起的。

    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines
    24.
    发明授权
    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines 失效
    使用纳米板的纳米机械部件，其制造方法和制造纳米机械的方法

    公开(公告)号：US07557044B2

    公开(公告)日：2009-07-07

    申请号：US11263476

    申请日：2005-10-31

    申请人： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

    发明人： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

    IPC分类号： H01L21/302

    CPC分类号： B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

    摘要： Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

    摘要翻译： 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其他常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

    Organic semiconductor device and method of fabricating the same
    25.
    发明申请
    Organic semiconductor device and method of fabricating the same 审中-公开
    有机半导体器件及其制造方法

    公开(公告)号：US20070126001A1

    公开(公告)日：2007-06-07

    申请号：US11497057

    申请日：2006-08-01

    申请人： Sung-Yool Choi ,  Min Ki Ryu ,  Ansoon Kim ,  Chil Seong Ah ,  Han Young Yu

    发明人： Sung-Yool Choi ,  Min Ki Ryu ,  Ansoon Kim ,  Chil Seong Ah ,  Han Young Yu

    IPC分类号： H01L29/08

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  G11C13/0014 ,  H01L51/0075

    摘要： An organic semiconductor device and a method of fabricating the same are provided. The device includes: a first electrode; an electron channel layer formed on the first electrode; and a second electrode formed on the electron channel layer, wherein the electron channel layer comprises: a lower organic layer formed on the first electrode; a nano-particle layer formed on the lower organic layer and including predetermined sizes of nano-particles that are spaced a predetermined distance apart from each other; and an upper organic layer formed over the nano-particle layer. Accordingly, a highly integrated organic semiconductor device can be fabricated by a simple fabrication process, and nonuniformity of devices due to threshold voltage characteristics and downsizing of the device can resolved, so that a semiconductor device having excellent performance can be implemented.

    摘要翻译： 提供一种有机半导体器件及其制造方法。 该装置包括：第一电极; 形成在第一电极上的电子通道层; 以及形成在所述电子通道层上的第二电极，其中所述电子通道层包括：形成在所述第一电极上的下部有机层; 形成在下部有机层上并且包括彼此间隔开预定距离的预定尺寸的纳米颗粒的纳米颗粒层; 和在纳米颗粒层上形成的上部有机层。 因此，可以通过简单的制造工艺制造高度集成的有机半导体器件，并且可以解决由于阈值电压特性而导致的器件的不均匀性和器件的小型化，从而可以实现具有优异性能的半导体器件。

    Process for preparing nanogap electrode and nanogap device using the same
    28.
    发明申请
    Process for preparing nanogap electrode and nanogap device using the same 审中-公开
    制备纳米胶片电极和使用其的纳米胶片装置的方法

    公开(公告)号：US20100098966A1

    公开(公告)日：2010-04-22

    申请号：US11991071

    申请日：2006-08-03

    申请人： Chil Seong Ah ,  Yong Ju Yun ,  Jun Sung Lee ,  Hyung Ju Park ,  Dong Han Ha ,  Wan Soo Yun

    发明人： Chil Seong Ah ,  Yong Ju Yun ,  Jun Sung Lee ,  Hyung Ju Park ,  Dong Han Ha ,  Wan Soo Yun

    IPC分类号： B32B3/00 ,  B05D5/12 ,  G03F7/20

    CPC分类号： G01R33/1269 ,  Y10T428/12389

    摘要： The present invention relates to a process of preparing a nanogap electrode and a nanogap device using the same, and a preparing process according to the present invention is characterized in that reduced metal is grown by reduction reaction from a metal ion in solution on the surface of a metal pattern with a predetermined shape. A method of preparing a nanogap electrode according to the present invention has an advantage that nanogap electrodes having a gap distance of 1-100 nm, which are difficult to prepare by a conventional method, can be easily prepared in a reproducible and uniform manner.

    摘要翻译： 本发明涉及制备纳米隙电极的方法和使用该方法的纳米凹槽装置，本发明的制备方法的特征在于还原金属通过从溶液中的金属离子的还原反应生长， 具有预定形状的金属图案。 根据本发明的制备纳米间隙电极的方法具有的优点是可以容易地以可再现和均匀的方式制备具有1-100nm的间隙距离的难以准备的常规方法的纳米间隙电极。

    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME
    29.
    发明申请
    BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    使用硅纳米管的生物传感器及其制造方法

    公开(公告)号：US20090152598A1

    公开(公告)日：2009-06-18

    申请号：US12240114

    申请日：2008-09-29

    申请人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： In Bok BAEK ,  Jong Heon Yang ,  Chang Geun Ahn ,  Han Young Yu ,  Chil Seong Ah ,  Chan Woo Park ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L29/00 ,  H01L21/00

    CPC分类号： G01N27/4145 ,  G01N27/4146

    摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.

    摘要翻译： 提供了使用硅纳米线的生物传感器及其制造方法。 可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。 此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。 此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。

    Three-dimensional nanodevices including nanostructures
    30.
    发明授权
    Three-dimensional nanodevices including nanostructures 有权
    包括纳米结构在内的三维纳米器件

    公开(公告)号：US08263964B2

    公开(公告)日：2012-09-11

    申请号：US12672995

    申请日：2008-05-19

    申请人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    发明人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    IPC分类号： H01L29/06

    CPC分类号： H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

    摘要： Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

    摘要翻译： 提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分， 设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测 外部供应的吸附材料。 因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。 特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。 此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。