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82 条记录 (耗时 0.072 秒)

    Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias
    22.
    发明申请
    Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias 审中-公开
    远程等离子体原子层沉积设备和使用Dc偏压的方法

    公开(公告)号：US20090011150A1

    公开(公告)日：2009-01-08

    申请号：US11658961

    申请日：2004-08-04

    申请人： Hyeong-Tag Jeon ,  Un-Jung Kim ,  Ju-Youn Kim ,  Jin-Woo Kim

    发明人： Hyeong-Tag Jeon ,  Un-Jung Kim ,  Ju-Youn Kim ,  Jin-Woo Kim

    IPC分类号： B01J19/08 ,  C23C16/54

    CPC分类号： C23C16/45542 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574 ,  C30B25/105 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H05H3/02

    摘要： A conventional plasma applied ALD apparatus has a problem in that physical shock is directly imposed on a substrate and a thin film thereby damaging the thin film. Further, many reports have said that since an apparatus for controlling plasma energy is not arranged well, the thin film is not formed uniformly due to plasma nonuniformity. Therefore, there is provided a remote plasma atomic layer deposition apparatus using a DC bias comprising: a reaction chamber having an inner space; a substrate supporting body on which a substrate on which a thin film is to be formed is loaded arranged at one side of the inner space of the reaction chamber; a remote plasma generating unit arranged outside of the reaction chamber to supply a remote plasma into the inner space of the reaction chamber; a DC bias unit controlling energy of the remote plasma; and a source gas supply unit supplying a source gas for forming the thin film into the reaction chamber.

    摘要翻译： 常规的等离子体涂覆的ALD装置具有直接施加在基板和薄膜上的物理冲击从而损坏薄膜的问题。 此外，许多报道说，由于用于控制等离子体能量的装置不能很好地布置，所以由于等离子体不均匀性而不能均匀地形成薄膜。 因此，提供了使用DC偏压的远程等离子体原子层沉积装置，包括：具有内部空间的反应室; 在反应室的内部空间的一侧设置有基板支撑体，在基板支撑体上形成有要形成薄膜的基板， 远程等离子体生成单元，其布置在反应室的外部，以将远程等离子体供应到反应室的内部空间中; DC偏压单元，控制远程等离子体的能量; 以及源气体供给单元，其将用于将薄膜形成的源气体供给到反应室中。

    Mammalian cancer cell and transgenic mammal carrying human protooncogene and kit for diagnosing cancer using said protooncogene
    23.
    发明授权
    Mammalian cancer cell and transgenic mammal carrying human protooncogene and kit for diagnosing cancer using said protooncogene 失效
    哺乳动物癌细胞和携带人类原癌基因的转基因哺乳动物和用于使用所述原癌基因诊断癌症的试剂盒

    公开(公告)号：US07459602B2

    公开(公告)日：2008-12-02

    申请号：US10465950

    申请日：2001-07-11

    申请人： Jin-Woo Kim

    发明人： Jin-Woo Kim

    IPC分类号： A01K67/00

    CPC分类号： C12N15/8509 ,  A01K67/0271 ,  A01K67/0275 ,  A01K67/0278 ,  A01K2207/15 ,  A01K2217/00 ,  A01K2217/05 ,  A01K2227/105 ,  A01K2267/0331 ,  C07K14/82 ,  C12N5/0693 ,  C12N2510/00 ,  C12Q1/6886 ,  C12Q2600/158

    摘要： The present invention provides a mammalian cell transfected with an expression vector comprising a human protooncogene which has the nucleotide sequence of SEQ ID NO: 1; a mammalian embryo carrying a nucleic acid construct comprising the human protooncogene; a transgenic cancer mammal, which is derived from the mammalian embryo; and a kit for diagnosing a cancer selected from the group consisting of breast, kidney, ovary and stomach cancers, which comprises a probe having the nucleotide sequence complementary to mRNA transcribed from the human protooncogene or a portion of the mRNA; or an antibody binding specifically to a protein translated from the mRNA or a portion of the protein.

    摘要翻译： 本发明提供用包含具有SEQ ID NO：1的核苷酸序列的人原癌基因的表达载体转染的哺乳动物细胞; 携带包含人原癌基因的核酸构建体的哺乳动物胚胎; 衍生自哺乳动物胚胎的转基因癌症哺乳动物; 以及用于诊断选自乳腺，肾脏，卵巢和胃癌的癌症的试剂盒，其包含具有与从人原癌基因或mRNA的一部分转录的mRNA互补的核苷酸序列的探针; 或与从mRNA或蛋白质的一部分翻译的蛋白质特异性结合的抗体。

    Nonvolatile memory cells having split gate structure and methods of fabricating the same
    27.
    发明授权
    Nonvolatile memory cells having split gate structure and methods of fabricating the same 有权

    公开(公告)号：US07183154B2

    公开(公告)日：2007-02-27

    申请号：US10980992

    申请日：2004-11-04

    申请人： Jin-Woo Kim ,  Dong-Jun Kim ,  Min-Soo Cho ,  Dai-Geun Kim

    发明人： Jin-Woo Kim ,  Dong-Jun Kim ,  Min-Soo Cho ,  Dai-Geun Kim

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/11556 ,  H01L27/115

    摘要： Nonvolatile memory cells having a split gate structure and methods of fabricating the same are provided. The nonvolatile memory cells include active regions defined at a predetermined region of a semiconductor substrate. A portion of each of the active regions is etched to form a cell trench region. Insulated floating gates are disposed on a pair of sidewalls parallel with the direction that crosses the active region. A source region is disposed at a bottom surface of the cell trench region. A gap region between the floating gates is filled with a common source line electrically connected to the source region. The common source line is extended along the direction that crosses the active regions. The active regions, which are adjacent to the floating gates, are covered with word lines parallel with the common source line. Drain regions are disposed in the active regions adjacent to the word lines. The drain regions are electrically connected to bit lines that cross over the word lines.

    Method of forming flash memory
    30.
    发明授权
    Method of forming flash memory 失效
    形成闪存的方法

    公开(公告)号：US06730565B2

    公开(公告)日：2004-05-04

    申请号：US10277848

    申请日：2002-10-22

    申请人： Min-Soo Cho ,  Dong-Jun Kim ,  Jin-Woo Kim

    发明人： Min-Soo Cho ,  Dong-Jun Kim ,  Jin-Woo Kim

    IPC分类号： H10L21336

    CPC分类号： H01L27/11519 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521

    摘要： The present invention provides a method of forming a split gate type flash memory. After exposure of a floating gate layer between silicon nitride layers, a conductive layer spacer is formed on a sidewall of the silicon nitride layer pattern. The conductive layer spacer is formed in a floating gate of a later-completed flash memory to form a tip on which tunneling is centralized in an erase operation. That is, the spacer is formed on a sidewall of the silicon nitride layer pattern over the floating gate layer to form the tunneling tip.

    摘要翻译： 本发明提供一种形成分离式闪存的方法。 在氮化硅层之间的浮栅层暴露之后，在氮化硅层图案的侧壁上形成导电层间隔物。 导电层隔离物形成在随后完成的闪速存储器的浮动栅极中，以形成在擦除操作中将隧道集中在其上的尖端。 也就是说，间隔物形成在浮动栅极层上的氮化硅层图案的侧壁上以形成隧道末端。