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133 条记录 (耗时 0.031 秒)

    Semiconductor device having capacitor
    21.
    发明授权
    Semiconductor device having capacitor 失效
    具有电容器的半导体器件

    公开(公告)号：US07985999B2

    公开(公告)日：2011-07-26

    申请号：US12659724

    申请日：2010-03-18

    申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Im-Soo Park

    发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Im-Soo Park

    IPC分类号： H01L27/108

    CPC分类号： H01L28/91 ,  H01L21/31116 ,  H01L27/10817 ,  H01L27/10852

    摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

    摘要翻译： 可以提供具有电容器的半导体器件及其制造方法。 制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层： 各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极 在模具和接触电极孔中。 各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。 选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

    Semiconductor device having capacitor and method of fabricating the same
    24.
    发明授权
    Semiconductor device having capacitor and method of fabricating the same 有权

    公开(公告)号：US07820508B2

    公开(公告)日：2010-10-26

    申请号：US11593067

    申请日：2006-11-06

    申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Im-Soo Park

    发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Im-Soo Park

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L21/31116 ,  H01L27/10817 ,  H01L27/10852

    摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

    Method for treating substrate
    26.
    发明申请
    Method for treating substrate 审中-公开
    底物处理方法

    公开(公告)号：US20090025755A1

    公开(公告)日：2009-01-29

    申请号：US12219562

    申请日：2008-07-24

    申请人： Dae-Hong Eom ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Young-Ok Kim

    发明人： Dae-Hong Eom ,  Chang-Ki Hong ,  Woo-Gwan Shim ,  Young-Ok Kim

    IPC分类号： B08B3/10

    CPC分类号： B08B3/04 ,  B08B3/10 ,  H01L21/67034 ,  H01L21/67051

    摘要： Example embodiments relate to a method of treating a substrate after performing a cleaning step with a liquid chemical in a single substrate spin cleaner. A method of treating a substrate according to example embodiments may include forming a film of deionized water on a surface of the substrate during rinsing, and drying the substrate by supplying a drying gas to the water film on the surface of the substrate. When rinsing the substrate, the rotating speed of the substrate may be reduced to about 50 rpm or less to form a film of water on the surface of the substrate. The film of water may shield the surface of the substrate from direct exposure to atmospheric air. The film of water may be maintained on the surface of the substrate when commencing the supply of the drying gas. Consequently, the number of water marks on the dried substrate may be reduced or prevented.

    摘要翻译： 示例性实施方案涉及在单个底物旋转清洁剂中用液体化学品进行清洁步骤之后处理基材的方法。 根据示例性实施方案的处理基材的方法可以包括在漂洗期间在基材的表面上形成去离子水膜，并通过向基材表面上的水膜供应干燥气体来干燥基材。 当冲洗基板时，基板的旋转速度可以降低到约50rpm或更小，以在基板的表面上形成水膜。 水膜可以屏蔽衬底表面直接暴露于大气中。 当开始供应干燥气体时，水膜可以保持在基板的表面上。 因此，可以减少或防止干燥的基板上的水痕的数量。

    Slurry compositions and CMP methods using the same
    29.
    发明授权
    Slurry compositions and CMP methods using the same 失效
    浆料组合物和使用其的CMP方法

    公开(公告)号：US07314578B2

    公开(公告)日：2008-01-01

    申请号：US10807139

    申请日：2004-03-24

    申请人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    发明人： Jaekwang Choi ,  Jaedong Lee ,  Chang-Ki Hong

    IPC分类号： C09K5/00

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

    摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

    摘要翻译： 提供适用于涉及多晶硅层的化学机械抛光（CMP）的工艺的新的浆料组合物的本发明的示例性实施方案。 浆料组合物包括一种或多种非离子聚合物表面活性剂，其将在暴露的多晶硅表面上选择性地形成钝化层，以便抑制相对于氧化硅和氮化硅的多晶硅去除速率并提高抛光的基材的平面度。 示例性的表面活性剂包括环氧乙烷（EO）和环氧丙烷（PO）嵌段共聚物的烷基和芳基醇，并且可以以高达约5重量％的量存在于浆料组合物中，尽管更小的浓度可能是有效的。 其它浆料添加剂可以包括粘度调节剂，pH调节剂，分散剂，螯合剂和适于改变氮化硅和氧化硅的相对去除速率的胺或亚胺表面活性剂。

    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device
    30.
    发明申请
    Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device 有权
    用于清洁具有暴露的硅和锗锗层的衬底的方法和用于制造半导体器件的相关方法

    公开(公告)号：US20070072431A1

    公开(公告)日：2007-03-29

    申请号：US11527473

    申请日：2006-09-27

    申请人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    发明人： Chang-Sup Mun ,  Woo-Gwan Shim ,  Han-Ku Cho ,  Chang-Ki Hong ,  Doo-Won Kwon

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02057 ,  H01L21/02082

    摘要： A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), and deionized water (H2O), and the second cleaning solution comprises at least 200 times more deionized water (H2O) than ammonium hydroxide (NH4OH) by volume.

    摘要翻译： 公开了一种用于清洁其上形成和暴露硅层和硅锗层的衬底的方法，以及使用该清洁方法制造半导体器件的方法。 该清洗方法包括：制备半导体衬底，在其上形成和暴露硅层和硅锗层; 以及执行使用第一清洁溶液从半导体衬底去除自然氧化物层的第一清洁子过程。 清洁方法还包括在执行第一清洁子过程之后在半导体衬底上执行第二清洁子处理，其中第二清洁子处理包括使用第二清洁溶液。 此外，第二清洗溶液包括氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2 O 2）和去离子水（ H 2 O），并且第二清洁溶液包含比氢氧化铵（NH 4 O 2）少至少200倍的去离子水（H 2 O 2 O） OH）。