公开(公告)号：US08722546B2

公开(公告)日：2014-05-13

申请号：US13493897

申请日：2012-06-11

申请人： Atsuki Fukazawa ,  Takahiro Oka

发明人： Atsuki Fukazawa ,  Takahiro Oka

IPC分类号： H01L21/00

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

摘要翻译： 通过循环沉积在半导体衬底上形成具有Si-C键和/或Si-N键的电介质膜的方法包括：（i）在其中放置半导体衬底的反应空间中进行一个或多个循环的循环沉积 ，使用含Si的前体和反应气体; 和（ii）在步骤（i）之前或之后，在不提供含Si前体的同时供应稀有气体和处理气体的同时向反应空间施加RF功率脉冲，由此具有Si-C键合和/ 或Si-N键形成在半导体衬底上。

公开(公告)号：US20130330933A1

公开(公告)日：2013-12-12

申请号：US13493897

申请日：2012-06-11

申请人： Atsuki Fukazawa ,  Takahiro Oka

发明人： Atsuki Fukazawa ,  Takahiro Oka

IPC分类号： H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

摘要翻译： 通过循环沉积在半导体衬底上形成具有Si-C键和/或Si-N键的电介质膜的方法包括：（i）在其中放置半导体衬底的反应空间中进行一个或多个循环的循环沉积 ，使用含Si的前体和反应气体; 和（ii）在步骤（i）之前或之后，在不提供含Si前体的同时供应稀有气体和处理气体的同时向反应空间施加RF功率脉冲，由此具有Si-C键合和/ 或Si-N键形成在半导体衬底上。

公开(公告)号：US20130224964A1

公开(公告)日：2013-08-29

申请号：US13406791

申请日：2012-02-28

申请人： Atsuki Fukazawa ,  Noboru Takamure

发明人： Atsuki Fukazawa ,  Noboru Takamure

IPC分类号： H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/4554 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.

摘要翻译： 通过原子层沉积（ALD）在半导体衬底上形成具有Si-C键的电介质膜的方法包括：（i）在衬底的表面上吸附前体; （ii）使吸附的前体和表面上的反应气体反应; 和（iii）重复步骤（i）和（ii）以形成在衬底上具有至少Si-C键的电介质膜。 前体在其分子中具有Si-C-Si键，并且反应物气体是无氧的和无卤素的，并且由至少一种稀有气体构成。

公开(公告)号：US20120295449A1

公开(公告)日：2012-11-22

申请号：US13566069

申请日：2012-08-03

申请人： Atsuki Fukazawa

发明人： Atsuki Fukazawa

IPC分类号： H01L21/314 ,  H01L21/318

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

摘要： A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

摘要翻译： 通过原子层沉积（ALD）在半导体衬底上形成具有至少Si-N，Si-C或Si-B键的电介质膜的方法包括：以脉冲提供前体以将前体吸附在表面上 的基材; 在表面上以脉冲形式提供反应气体，而不会重叠前体的供应; 使表面上的前体和反应气体反应; 并重复上述步骤以在基片上形成至少具有Si-N，Si-C或Si-B键的电介质膜。 该前体在其分子中具有至少一个Si-C或Si-N键，至少一个烃和至少两个与硅结合的卤素。

公开(公告)号：US08003174B2

公开(公告)日：2011-08-23

申请号：US11955766

申请日：2007-12-13

申请人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Woo Jin Lee ,  Nobuo Matsuki

IPC分类号： H05H1/24

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/31612

摘要： A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

摘要翻译： 形成电介质膜的方法包括：将基本上由Si，O，C和H构成的硅氧烷气体和基本上由Si，N，H和任选的C组成的硅氮烷气体引入放置基板的反应室中 ; 通过等离子体反应在衬底上沉积包含Si-N键的硅氧烷基膜; 并在退火室中退火基板上的硅氧烷基膜，以从膜中除去Si-N键。

公开(公告)号：US07651959B2

公开(公告)日：2010-01-26

申请号：US11949701

申请日：2007-12-03

申请人： Atsuki Fukazawa ,  Jeongseok Ha ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Jeongseok Ha ,  Nobuo Matsuki

IPC分类号： H01L21/469

CPC分类号： H01L21/3125 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45512 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3185

摘要： A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.

摘要翻译： 形成电介质膜的方法包括：将基本上由Si，N，H和任选地C构成的源气体引入至少一个选自Si-N，Si-Si和Si-H的键到反应室中， 放置基板; 在-50℃至50℃下通过等离子体反应将基本上由Si，N，H和任选C构成的硅氮烷基膜沉积在基板上，其中该膜不含基本上由C构成的溶剂的暴露 ，H和任选的O; 并在热处理室中将基板上的硅氮烷基膜热处理，同时将氧供应源引入热处理室中以从膜中释放C并增加膜中的Si-O键。

公开(公告)号：US07560144B2

公开(公告)日：2009-07-14

申请号：US11086598

申请日：2005-03-22

申请人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Kiyoto Itoh ,  Tsunayuki Kimura ,  Nobuo Matsuki

IPC分类号： H05H1/24

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/5096 ,  H01J37/32082 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122

摘要： A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

摘要翻译： 一种形成具有低介电常数的膜的方法，包括以下步骤：将反应室内的上部电极和下部电极之间的基板放置在反应室内，引入含硅烃化合物源气体，添加气体和惰性 气体通过控制气体流量比进入上部和下部电极之间的空间，通过在上部电极和基底之间的间隔较窄的状态下对上部和下部电极之间的空间施加RF功率来产生等离子体 衬底的中心附近比其周围附近，并且以小于约的沉积速率在衬底上形成具有低介电常数的膜。 通过控制处理气体的流量来达到790nm / min。

公开(公告)号：US20080076266A1

公开(公告)日：2008-03-27

申请号：US11525147

申请日：2006-09-21

申请人： Atsuki Fukazawa ,  Nobuo Matsuki

发明人： Atsuki Fukazawa ,  Nobuo Matsuki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612

摘要： A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of −50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cm3 as a result of the heat treatment.

摘要翻译： 通过等离子体反应在半导体基板上形成绝缘膜的方法包括：在反应室中引入含有分子中的含硅烃化合物的源气体，所述含硅烃化合物的分子中含有至少一个Si-O键和至少一个选自 由Si-Si键，Si-N键和Si-H键组成的组; 将由C，H和任选的O构成的添加气体引入反应室; 在-50℃至50℃的温度下控制基座; 通过等离子体反应在100nm / min以下的沉积速率下在基板的不规则表面上形成由Si，O，H和任选的N构成的绝缘膜; 并且利用绝缘膜对衬底进行热处理，由此通过热处理将绝缘膜的密度提高到2.1g / cm 3以上。

公开(公告)号：US07229935B2

公开(公告)日：2007-06-12

申请号：US10932816

申请日：2004-09-02

申请人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

发明人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

IPC分类号： H01L21/471 ,  C23C16/22

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

摘要翻译： 形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

公开(公告)号：US20060286306A1

公开(公告)日：2006-12-21

申请号：US11155841

申请日：2005-06-17

申请人： Naoki Ohara ,  Atsuki Fukazawa

发明人： Naoki Ohara ,  Atsuki Fukazawa

IPC分类号： B05D3/00 ,  C08J7/18 ,  B29C71/04

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185

摘要： A method of treating a low-dielectric constant film includes: depositing a low-dielectric constant film on a substrate, which is structured by Si—C bond and has a first leakage current; and emitting ultraviolet (UV) light to the film until the film has a second leakage current which is ½ or less of the first leakage current.

摘要翻译： 处理低介电常数膜的方法包括：在由Si-C键构成且具有第一漏电流的基板上沉积低介电常数膜; 并向该膜发射紫外线（UV）光，直到膜具有第一泄漏电流的1/2或更小的第二漏电流。