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    Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
    1.
    发明授权
    Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control 有权
    通过侧壁覆盖控制的循环沉积形成含硅电介质膜的方法

    公开(公告)号：US08722546B2

    公开(公告)日：2014-05-13

    申请号：US13493897

    申请日：2012-06-11

    申请人： Atsuki Fukazawa ,  Takahiro Oka

    发明人： Atsuki Fukazawa ,  Takahiro Oka

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

    摘要翻译： 通过循环沉积在半导体衬底上形成具有Si-C键和/或Si-N键的电介质膜的方法包括：（i）在其中放置半导体衬底的反应空间中进行一个或多个循环的循环沉积 ，使用含Si的前体和反应气体; 和（ii）在步骤（i）之前或之后，在不提供含Si前体的同时供应稀有气体和处理气体的同时向反应空间施加RF功率脉冲，由此具有Si-C键合和/ 或Si-N键形成在半导体衬底上。

    Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control
    2.
    发明申请
    Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control 有权
    通过侧壁覆盖控制循环沉积形成含硅介电膜的方法

    公开(公告)号：US20130330933A1

    公开(公告)日：2013-12-12

    申请号：US13493897

    申请日：2012-06-11

    申请人： Atsuki Fukazawa ,  Takahiro Oka

    发明人： Atsuki Fukazawa ,  Takahiro Oka

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

    摘要翻译： 通过循环沉积在半导体衬底上形成具有Si-C键和/或Si-N键的电介质膜的方法包括：（i）在其中放置半导体衬底的反应空间中进行一个或多个循环的循环沉积 ，使用含Si的前体和反应气体; 和（ii）在步骤（i）之前或之后，在不提供含Si前体的同时供应稀有气体和处理气体的同时向反应空间施加RF功率脉冲，由此具有Si-C键合和/ 或Si-N键形成在半导体衬底上。

    Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
    4.
    发明授权
    Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature 有权
    在低温下通过等离子体增强原子层沉积沉积氧化硅膜的方法

    公开(公告)号：US08197915B2

    公开(公告)日：2012-06-12

    申请号：US12416809

    申请日：2009-04-01

    申请人： Takahiro Oka ,  Akira Shimizu

    发明人： Takahiro Oka ,  Akira Shimizu

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/402 ,  C23C16/45542 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/32139

    摘要： A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在抗蚀剂图案或在衬底上形成的蚀刻线上沉积氧化硅膜的方法包括：提供在其中在PEALD反应器中形成抗蚀剂图案或蚀刻线的衬底; 将其上放置基板的基座的温度控制在低于50℃作为沉积温度; 在PEALD反应器中引入含硅前体和供氧反应物并在其中施加RF功率，同时基本上或几乎处于小于50℃的恒定温度下控制沉积温度，从而沉积硅 抗蚀剂图案或蚀刻线上的氧化物原子层; 并且在恒定温度下基本上或接近多次重复该循环，以将氧化硅原子膜沉积在抗蚀剂图案或蚀刻线上。

    Process for producing bent pipe for line pipe
    5.
    发明授权
    Process for producing bent pipe for line pipe 有权
    管线弯管生产工艺

    公开(公告)号：US08038811B2

    公开(公告)日：2011-10-18

    申请号：US12565254

    申请日：2009-09-23

    申请人： Takahiro Oka

    发明人： Takahiro Oka

    IPC分类号： C21D9/08 ,  C22C38/02 ,  C22C38/04

    CPC分类号： C22C38/44 ,  C21D8/10 ,  C21D9/08 ,  C22C38/004 ,  C22C38/02 ,  C22C38/04 ,  C22C38/18 ,  C22C38/46 ,  C22C38/50

    摘要： A steel pipe is prepared, which contains, by mass, at most 0.009% C, at most 1.0% Mn, at most 1.0% Si, at most 0.04% P, at most 0.005% S, 0.01 to 0.2% Ti, 0.01 to 0.10% V, 0.001 to 0.1% Al, at most 0.1% N, 4.0 to 8.0% Ni, 9.0 to 15.0% Cr, and 1.5 to 7.0% Mo, the balance being Fe and impurities. The prepared steel pipe is bent into a bend pipe. The bend pipe is quenched at a quenching temperature lower than 950° C. The quenched bend pipe is tempered. Accordingly, the bend pipe in accordance with the present invention has excellent SSC resistance.

    摘要翻译： 制备钢管，其质量含量最多为0.009％，至多1.0％的Mn，至多1.0％的Si，至多0.04％的P，至多0.005％的S，0.01至0.2％的Ti，0.01至 0.10％V，0.001〜0.1％Al，0.1％N以下，Ni：4.0〜8.0％，Cr：9.0〜15.0％，Mo：1.5〜7.0％，余量为Fe和杂质。 准备好的钢管弯曲成弯管。 弯曲管在低于950℃的淬火温度下淬火。淬火的弯管被回火。 因此，根据本发明的弯曲管具有优异的耐SSC性。

    Process for continuously producing a high-melt viscoelastic ethylene-propylene copolymer
    10.
    发明授权
    Process for continuously producing a high-melt viscoelastic ethylene-propylene copolymer 失效
    用于连续生产高熔点粘弹性乙烯 - 丙烯共聚物的方法

    公开(公告)号：US4760113A

    公开(公告)日：1988-07-26

    申请号：US942796

    申请日：1986-12-17

    申请人： Hiromasa Chiba ,  Shunji Kawazoe ,  Takahiro Oka

    发明人： Hiromasa Chiba ,  Shunji Kawazoe ,  Takahiro Oka

    IPC分类号： C08F210/16 ,  C08F2/00 ,  C08F2/02 ,  C08F2/04 ,  C08F2/06 ,  C08F4/60 ,  C08F4/64 ,  C08F4/642 ,  C08F6/00 ,  C08F6/06 ,  C08F297/08

    CPC分类号： C08F297/083

    摘要： A continuous polymerization process for producing a high-melt viscoelastic ethylene-propylene copolymer by the use of Ziegler-Natta catalyst, which process make it possible to stably produce an ethylene-propylene block copolymer having superior physical properties suitable to sheet molding and blow molding and capable of producing large-size molded products is provided,which process comprises(a) feeding propylene and ethylene in a weight proportion of ethylene in the total of propylene and ethylene of 0-5% into 3 or more polymerization vessels among 4 or more polymerization vessels connected in series, to carry out continuous polymerization step (i) and successively feeding ethylene and propylene in a weight proportion of ethylene in the total of ethylene and propylene of 10-100% into one or more polymerization vessels, to carry out continuous polymerization process (ii); (b) feeding the total quantity of the catalyst only to the first polymerization vessel; (c) feeding the total quantity of hydrogen substantially only to the first polymerization vessel; and (d) making the quantity of polymer obtained in step (i) 60-95 weight % based on the total polymerization quantity.

    摘要翻译： 通过使用齐格勒 - 纳塔催化剂制造高熔点粘弹性乙烯 - 丙烯共聚物的连续聚合方法，该方法使得可以稳定地制备具有适合于片材成型和吹塑成型的优异物理性能的乙烯 - 丙烯嵌段共聚物，以及 提供能够生产大尺寸模制产品的方法，该方法包括（a）在4个或更多个聚合物中将丙烯和乙烯总量为0-5％的乙烯的重量比例的丙烯和乙烯进料到3个或更多个聚合容器中 串联连接的容器，进行连续聚合步骤（i），并将乙烯和丙烯的总重量为10-100％的乙烯和丙烯的重量比连续地供入到一个或多个聚合容器中，以进行连续聚合 方法（ii）; （b）仅向第一聚合容器供给催化剂总量; （c）基本上仅向第一聚合容器供给总量的氢; 和（d）基于总聚合量使步骤（i）中获得的聚合物的量为60-95重量％。