公开(公告)号：US20190206986A1

公开(公告)日：2019-07-04

申请号：US15076553

申请日：2016-03-21

Applicant: Jun Hu ,  Zhiyun Luo ,  Fei Wang

Inventor： Jun Hu ,  Zhiyun Luo ,  Fei Wang

IPC: H01L29/06 ,  H01L21/266 ,  H01L21/761

CPC classification number: H01L29/0623 ,  H01L21/266 ,  H01L21/761 ,  H01L29/7811 ,  H01L29/7823

Abstract: This invention discloses a semiconductor power device formed on a semiconductor substrate comprises an active cell area and a termination area disposed near edges of the semiconductor substrate. The termination area comprises a plurality of duplicated units wherein each unit includes at least two trenches filled with a conductive trench material having a mesa area between adjacent trenches wherein the trenches and the mesa areas within each of the duplicated units are electrically shunt together. In the termination area each of the trenches in the duplicated units has a buried guard ring dopant region disposed below a bottom surface of the trenches.

公开(公告)号：US20170162689A1

公开(公告)日：2017-06-08

申请号：US14957570

申请日：2015-12-02

Applicant: Jun Hu ,  Zhiyun LUO ,  Fei WANG ,  Mengyu PAN

Inventor： Jun Hu ,  Zhiyun LUO ,  Fei WANG ,  Mengyu PAN

IPC: H01L29/78 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L21/32139 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/66734 ,  H01L29/7811

Abstract: A semiconductor power device includes a plurality of power transistor cells each having a trenched gate disposed in a gate trench opened in a semiconductor substrate wherein a plurality of the trenched gates further include a shielded bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed at a top portion of the gate trench by an inter-electrode insulation layer. At least one of the shielded bottom electrode is connected a source metal and at least one of the top electrodes in the gate trench is connected to a source metal of the power device.

公开(公告)号：US09572209B2

公开(公告)日：2017-02-14

申请号：US14529255

申请日：2014-10-31

Applicant: Jun Hu

Inventor： Jun Hu ,  Yongming Deng ,  Ping Liu

IPC: G05F1/00 ,  H05B37/02 ,  H05B39/04 ,  H05B33/08

CPC classification number: H05B33/0815 ,  H05B33/0851

Abstract: An actuating device comprises an LED actuating module. Said LED actuating module comprises a micro-programmed control unit (MCU), an actuator, a VF-value detection module, a PN-junction temperature acquisition module and an LED lamp unit. The MCU determines the current value matched with the LED lamp unit based on the VF value detected by the VF-value detection module and the temperature value detected by the PN-junction temperature acquisition module, and then determines the width of the PWM pulse output to the actuator according to the current value, and the actuator actuates an LED to operate at the matched current value.

Abstract translation: 致动装置包括LED致动模块。 所述LED驱动模块包括微编程控制单元（MCU），致动器，VF值检测模块，PN结温度采集模块和LED灯单元。 MCU根据VF值检测模块检测到的VF值和PN结温度采集模块检测到的温度值，确定与LED灯具单元匹配的电流值，然后确定PWM脉冲输出的宽度 执行器根据当前值，并且致动器致动LED以在匹配的电流值下操作。

公开(公告)号：US09313791B2

公开(公告)日：2016-04-12

申请号：US12775407

申请日：2010-05-06

Applicant: Jun Hu ,  Yu-Chuan Lin ,  Reza Shahidi ,  Amit Mahajan ,  Brian M. George

Inventor： Jun Hu ,  Yu-Chuan Lin ,  Reza Shahidi ,  Amit Mahajan ,  Brian M. George

IPC: H04M1/00 ,  H04W72/04 ,  H04W72/12 ,  H04W88/06

CPC classification number: H04W72/0473 ,  H04W72/044 ,  H04W72/1215 ,  H04W88/06 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/40

Abstract: A device and method for dropping an air interface is disclosed. In one embodiment, the method comprises communicating over a first air interface and a second air interface, determining an operational parameter based at least in part on a characteristic of the first air interface, and dropping the second air interface based at least in part on the operational parameter. A device and method for adding an air interface is also disclosed. In one embodiment, the system comprises a processor configured to drop one of a plurality of concurrently established air interfaces and to subsequently determine that at least one predetermined criteria is met before attempting to add the air interface.

Abstract translation: 公开了一种降低空中接口的设备和方法。 在一个实施例中，该方法包括通过第一空中接口和第二空中接口进行通信，至少部分地基于第一空中接口的特性确定操作参数，以及至少部分地基于第二空中接口 操作参数。 还公开了一种用于添加空中接口的设备和方法。 在一个实施例中，系统包括处理器，其被配置为丢弃多个同时建立的空中接口中的一个并且随后在尝试添加空中接口之前确定满足至少一个预定标准。

公开(公告)号：US20150219676A1

公开(公告)日：2015-08-06

申请号：US14597408

申请日：2015-01-15

Applicant: Dan Yang ,  Nai-Kei Wong ,  Jun Hu

Inventor： Dan Yang ,  Nai-Kei Wong ,  Jun Hu

IPC: G01N33/84 ,  G01N33/58 ,  C07D491/20 ,  C07F7/08 ,  C07D493/10 ,  C07D311/82

CPC classification number: G01N33/84 ,  C07D311/82 ,  C07D491/20 ,  C07D493/10 ,  C07F7/0816 ,  C07F9/6561 ,  G01N33/582

Abstract: The invention provides fluorogenic compounds and probes that can be used as reagents for measuring, detecting and/or screening superoxide. The fluorogenic compounds of the invention can produce fluorescence colors, such as green, yellow, red, or far-red. The invention further provides fluorogenic compounds for selectively staining superoxide in the mitochondria of living cells. The invention also provides methods that can be used to measure, directly or indirectly, the presence and/or amount of superoxide in chemical samples and biological samples such as cells and tissues in living organisms, and a high-throughput screening methods for detecting or screening superoxide or compounds that can increase or decrease the level of superoxide in chemical and biological samples.

Abstract translation: 本发明提供可用作测量，检测和/或筛选超氧化物的试剂的荧光化合物和探针。 本发明的荧光化合物可以产生荧光颜色，例如绿色，黄色，红色或远红色。 本发明还提供了用于选择性染色活细胞线粒体中超氧化物的荧光化合物。 本发明还提供了可用于直接或间接测量化学样品和生物样品如生物体中的细胞和组织的超氧化物的存在和/或量的方法，以及用于检测或筛选的高通量筛选方法 超氧化物或可增加或降低化学和生物样品中超氧化物水平的化合物。

公开(公告)号：US20140372871A1

公开(公告)日：2014-12-18

申请号：US14369705

申请日：2011-12-31

Applicant: Jianping Song ,  Xiaojun Ma ,  Jun Hu ,  Renlei Chen ,  Yan Hu

Inventor： Jianping Song ,  Xiaojun Ma ,  Jun Hu ,  Renlei Chen ,  Yan Hu

IPC: G06F17/22 ,  G06F17/21 ,  H04L29/08

CPC classification number: G06F17/2247 ,  G06F17/212 ,  G06F17/30867 ,  G06F17/30893 ,  G06F17/30899 ,  G06F17/30902 ,  G06F17/30905 ,  G06Q30/02 ,  H04L67/22

Abstract: A method for providing a web page in a web server accessed by a user device, comprising: obtaining access behavior information to the web page by the user; and providing page contents and page layout adaptor of the web page to the user device so that a updated web page with an adapted page layout is generated by the user device according to the access behavior information.

Abstract translation: 一种用于在由用户设备访问的web服务器中提供网页的方法，包括：由用户获取访问行为信息到网页; 以及将网页的页面内容和页面布局适配器提供给用户设备，使得根据访问行为信息由用户设备生成具有适配页面布局的更新网页。

公开(公告)号：US20140264433A1

公开(公告)日：2014-09-18

申请号：US13831066

申请日：2013-03-14

Applicant: Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

Inventor： Jun Hu ,  Madhur Bobde ,  Hamza Yilmaz

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/7395 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66333

Abstract: A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

Abstract translation: 一种制造绝缘栅双极晶体管（IGBT）器件的方法，包括：1）制备具有第一导电类型的外延层的半导体衬底，该半导体衬底支撑在第二导电类型的半导体衬底上; 2）施加栅极沟槽掩模以打开第一沟槽和第二沟槽，随后形成栅极绝缘层以衬垫沟槽并用多晶硅层填充沟槽以形成第一沟槽栅极和第二沟槽栅极; 3）注入第一导电类型的掺杂剂以在外延层中形成上重掺杂区; 以及4）在所述第一沟槽栅极的顶部上形成平面栅极，并且将注入掩模施加到植入物体掺杂剂和源掺杂剂以在所述半导体衬底的顶表面附近形成体区域和源极区域。

公开(公告)号：US08835376B2

公开(公告)日：2014-09-16

申请号：US13120146

申请日：2009-09-24

Applicant: Zhigang Shen ,  Jimmy Sung Lai Yun ,  Jun Hu ,  Nital Arvind Jugade ,  Jiyao Zhang ,  Wenhao Chen ,  Zhe Wang ,  Lingyan Gao ,  William Glover ,  Jian Feng Chen

Inventor： Zhigang Shen ,  Jimmy Sung Lai Yun ,  Jun Hu ,  Nital Arvind Jugade ,  Jiyao Zhang ,  Wenhao Chen ,  Zhe Wang ,  Lingyan Gao ,  William Glover ,  Jian Feng Chen

IPC: A61K38/02 ,  A61K31/216 ,  A61K31/513 ,  A61K31/546 ,  A61K38/13 ,  A61K31/357 ,  A61K31/57 ,  A61K31/7052 ,  A61K31/277 ,  A61K31/197 ,  A61K47/38 ,  A61K47/24 ,  B01J2/06 ,  A61K9/16 ,  A61K9/20 ,  A61K9/14 ,  B01J19/00

CPC classification number: A61K9/14 ,  A61K9/1623 ,  A61K9/1652 ,  A61K9/1694 ,  A61K9/2077 ,  B01J2/06 ,  B01J19/0093 ,  B01J2219/00788 ,  B01J2219/00889

Abstract: A process for making particles for delivery of drug nanoparticles is disclosed herein. The process comprises the steps of (a) forming a suspension of drug nanoparticles by mixing a precipitant solution with an anti-solvent solution under micro-mixing environment, where the formed nanoparticles have a narrow particle size distribution; (b) providing an excipient to at least one of the precipitant solution, the anti-solvent solution and the suspension of drug nanoparticles, the excipient being selected to maintain said drug nanoparticles in a dispersed state when in liquid form; and (c) drying the suspension of drug nanoparticles containing the excipient therein to remove solvent therefrom, wherein removal of the solvent causes the excipient to solidify and thereby form micro-sized matrix particles, each micro-sized particle being comprised of drug nanoparticles dispersed in a solid matrix of the excipient.

Abstract translation: 本文公开了用于制备用于递送药物纳米颗粒的颗粒的方法。 该方法包括以下步骤：（a）通过在微混合环境下将沉淀剂溶液与抗溶剂溶液混合形成药物纳米颗粒的悬浮液，其中所形成的纳米颗粒具有窄的粒度分布; （b）向沉淀剂溶液，抗溶剂溶液和药物纳米颗粒的悬浮液中的至少一种提供赋形剂，所述赋形剂被选择为当液体形式时将所述药物纳米颗粒维持在分散状态; 和（c）干燥其中含有赋形剂的药物纳米颗粒的悬浮液以从其中除去溶剂，其中去除溶剂导致赋形剂固化，从而形成微尺寸的基质颗粒，每个微尺寸颗粒由分散在 赋形剂的固体基质。

公开(公告)号：US08829912B2

公开(公告)日：2014-09-09

申请号：US13059869

申请日：2009-08-26

Applicant: Xin Huang ,  Jun Hu ,  Qiang Wang

Inventor： Xin Huang ,  Jun Hu ,  Qiang Wang

IPC: G01R29/12 ,  G01N33/44 ,  G01N27/60

CPC classification number: G01N27/60 ,  G01N33/442

Abstract: A fixture can include a test fixture that holds an object whose electrostatic charge characteristics are to be measured, means for moving a piece of rubbing material into contact with the object, and means for rubbing a surface of the object. A method for measuring the electrostatic charge characteristics of an object using a test fixture can include: placing the object in the test fixture, moving a piece of rubbing material into contact with the object and rubbing a surface of the object with the piece of rubbing material for a period of time. The rubbing causes an electrostatic charge to be built up on the surface of the object. The electrostatic charge characteristics of the object can be measured and the measured electrostatic charge characteristics of the object can be displayed.

Abstract translation: 固定装置可以包括固定要测量其静电荷特性的物体的测试夹具，用于将一块摩擦材料移动到与物体接触的装置，以及用于摩擦物体表面的装置。 使用测试夹具测量物体的静电电荷特性的方法可以包括：将物体放置在测试夹具中，使一块摩擦材料与物体接触并用该摩擦材料摩擦物体的表面 一段时间。 摩擦会导致在物体表面上形成静电电荷。 可以测量物体的静电电荷特性，并且可以显示物体的测量的静电电荷特性。

公开(公告)号：US08785279B2

公开(公告)日：2014-07-22

申请号：US13561523

申请日：2012-07-30

Applicant: Anup Bhalla ,  Hamza Yilmaz ,  Madhur Bobde ,  Lingpeng Guan ,  Jun Hu ,  Jongoh Kim ,  Yongping Ding

Inventor： Anup Bhalla ,  Hamza Yilmaz ,  Madhur Bobde ,  Lingpeng Guan ,  Jun Hu ,  Jongoh Kim ,  Yongping Ding

IPC: H01L21/336

CPC classification number: H01L29/0634 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor power device formed in a semiconductor substrate comprising a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region supported by a heavily doped region. The semiconductor power device further comprises source trenches opened into the highly doped region filled with conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises buried P-regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 一种形成在半导体衬底中的半导体功率器件，包括在由重掺杂区域支撑的轻掺杂区域的顶部附近的半导体衬底的顶表面附近的高掺杂区域。 所述半导体功率器件还包括向所述高掺杂区域开放的源极沟槽，所述源极沟槽填充有与所述顶部表面附近的所述源极区域电接触的导电沟槽填充材料。 半导体功率器件还包括设置在源沟槽下方并且掺杂有与高掺杂区域相反导电性的掺杂剂的掩埋P区。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。