摘要:
In an image search apparatus, a data manager responds to an instruction for a first search condition issued via a user interface to manage data of a target model acquired from a database and generates an image to be displayed on a user interface. A determination processor responds to an instruction for a second search condition issued by positioning a pointer on the whole model image to compare a closed area defined by the specified position with boundary information of each part image, retrieves candidate part images, and prioritizes the candidate part images in order of increasing area calculated based on the boundary information. A parts selection processor displays the retrieved candidate part images on the user interface according to the order of increasing area in response to an instruction for a third search condition for choosing a target part image from among the candidate part images.
摘要:
A method of generating a solid-shell object from a solid object having a shelling-designated surface and other surfaces includes the steps of inwardly displacing the other surfaces to generate displaced surfaces, dividing the shelling-designated surface and the displaced surfaces into portions, removing unnecessary portions among the portions to leave necessary portions of the shelling-designated surface and the displaced surfaces, and connecting the necessary portions of the shelling-designated surface and the displaced surfaces together to generate a first surface model. The method further includes the steps of removing the shelling-designated surface from the solid object to generate a second surface model, and connecting the first surface model and the second surface model to generate the solid-shell object.
摘要:
A multilayered electronic part with minimized silver diffusion into ceramic body. The multilayered electronic part is produced by sintering a green ceramic body of a plurality of ceramic layers comprising a main phase and a grain boundary phase, at least one of the ceramic layers being printed thereon Ag-containing internal electrode patterns which may serve as markers for indicating several information such as a production number, a name of manufacturer, a kind of circuit, etc. By the production method of the invention, the diffusion of Ag in the internal electrode patterns into the ceramic body is effectively prevented to avoid the deterioration of the electrical characteristics as well as to avoid the blackening of the ceramic to ensure a high lightness of the ceramic body which enhances the reliability of the visual identification and distinguishability of the markers.
摘要:
An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.
摘要:
A substrate processing apparatus is used for radiating UV rays onto a target film formed on a target surface of a substrate to perform a curing process of the target film. The apparatus includes a hot plate configured to heat the substrate to a predetermined temperature, a plurality of support pins disposed on the hot plate to support the substrate, and a UV radiating device configured to radiate UV rays onto the target surface of the substrate supported on the support pins. The support pins are preset to provide a predetermined thermal conductivity to conduct heat of the substrate to the hot plate. The hot plate is preset to have a predetermined thermal capacity sufficient to absorb heat conducted through the support pins.
摘要:
The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
摘要:
The present invention provides a membrane structure having favorable pressure resistance and a manufacturing method of the same. After forming an opening (21a) on a substrate (21) by Deep Digging Reactive Ion Etching (DRIE), vertical streak formed by DRIE on the side face (inner peripheral face) of the opening (21a) is removed by performing light etching with an alkali etchant. The level of overhang of an overhanging section (21b) formed when forming an opening (22a) of a BOX layer (22) is suppressed by suppressing the overetching level when forming the BOX layer (22) by etching.
摘要:
A change rate prediction method according to which there can be eliminated the need for experimentally determining electron beam intensities for making a change rate of a specification value of a predetermined film on a substrate uniform. The distribution of the shrinkage rate of a low-k film on a wafer upon the low-k film being modified is measured while changing the inputted current value inputted to a central electron beam tube of an electron beam irradiating mechanism, the relationship between the inputted current value and the shrinkage rate measured directly below the electron beam tube is calculated, and a dose distribution calculated through simulation is converted into a low-k film shrinkage rate distribution based on the ratio between the inputted current value and the dose and a power curve giving the relationship between the inputted current value and the measured shrinkage rate.
摘要:
A change rate prediction method according to which there can be eliminated the need for experimentally determining electron beam intensities for making a change rate of a specification value of a predetermined film on a substrate uniform. The distribution of the shrinkage rate of a low-k film on a wafer upon the low-k film being modified is measured while changing the inputted current value inputted to a central electron beam tube of an electron beam irradiating mechanism, the relationship between the inputted current value and the shrinkage rate measured directly below the electron beam tube is calculated, and a dose distribution calculated through simulation is converted into a low-k film shrinkage rate distribution based on the ratio between the inputted current value and the dose and a power curve giving the relationship between the inputted current value and the measured shrinkage rate.