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    Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections
    21.
    发明授权
    Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections 有权
    具有圆形和椭圆形横截面的扫描光束的明场差分干涉对比度系统

    公开(公告)号：US09052190B2

    公开(公告)日：2015-06-09

    申请号：US13797901

    申请日：2013-03-12

    Applicant: KLA-Tencor Corporation

    Inventor： Ali Salehpour ,  Jaydeep Sinha ,  Kurt Lindsay Haller ,  Pradeep Vukkadala ,  George Kren ,  Jiayao Zhang ,  Mehdi Vaez-Iravani

    IPC: G01B11/02 ,  G01B11/30

    CPC classification number: G01B11/303 ,  G01B11/306 ,  G01B2210/56

    Abstract: A method of providing high accuracy inspection or metrology in a bright-field differential interference contrast (BF-DIC) system is described. This method can include creating first and second beams from a first light beam. The first and second beams have round cross-sections, and form first partially overlapping scanning spots radially displaced on a substrate. Third and fourth beams are created from the first light beam or a second light beam. The third and fourth beams have elliptical cross-sections, and form second partially overlapping scanning spots tangentially displaced on the substrate. At least one portion of the substrate can be scanned using the first and second partially overlapping scanning spots as the substrate is rotated. Radial and tangential slopes can be determined using measurements obtained from the scanning using the first and second partially overlapping scanning spots. These slopes can be used to determine wafer shape or any localized topography feature.

    Abstract translation: 描述了在亮场差分干涉对比（BF-DIC）系统中提供高精度检测或计量的方法。 该方法可以包括从第一光束产生第一和第二光束。 第一和第二光束具有圆形横截面，并形成在衬底上径向位移的第一部分重叠的扫描点。 从第一光束或第二光束产生第三和第四光束。 第三和第四光束具有椭圆形横截面，并形成在衬底上切向位移的第二部分重叠的扫描点。 当衬底旋转时，可以使用第一和第二部分重叠的扫描点来扫描衬底的至少一部分。 可以使用从使用第一和第二部分重叠的扫描点的扫描获得的测量来确定径向和切向斜率。 这些斜面可用于确定晶片形状或任何局部地形特征。

    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    24.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于有限元模型的半导体晶片卡盘的平面失真预测的系统和方法

    公开(公告)号：US20140107998A1

    公开(公告)日：2014-04-17

    申请号：US13735737

    申请日：2013-01-07

    Applicant: KLA-Tencor Corporation

    Inventor： Pradeep Vukkadala ,  Sathish Veeraraghavan ,  Jaydeep Sinha ,  Haiguang Chen ,  Michael Kirk

    IPC: G06F17/50

    CPC classification number: G06F17/5018 ,  H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真（IPD）的系统和方法。 根据本公开的一个实施例，利用仿真基于IPD预测的非线性有限元（FE）接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效，并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度，并且需要计算密集模拟。 此外，还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology
    25.
    发明申请
    Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology 有权
    用于晶圆表面计量的先进的基于位点的纳米形貌的系统和方法

    公开(公告)号：US20130236085A1

    公开(公告)日：2013-09-12

    申请号：US13779947

    申请日：2013-02-28

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Haiguang Chen ,  Sergey Kamensky ,  Jaydeep Sinha ,  Pradeep Vukkadala

    IPC: G06T7/00

    CPC classification number: G06T7/0004 ,  G06T5/20 ,  G06T2207/20021 ,  G06T2207/30148

    Abstract: Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.

    Abstract translation: 公开了用于为光学系统提供微缺陷检测能力的系统和方法。 在进行表面特征检测和定量之前，对每个给定的晶片图像进行过滤，处理和归一化。 利用分割方案将晶片图像分割成多个测量位置，并且为多个测量位置中的每一个计算度量值。 此外，为了分析目的，转换步骤也可以用于提取附加的过程相关度量值。

    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    27.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于半导体晶片卡盘的有限元模型预测面内失真的系统和方法

    公开(公告)号：US20160283625A1

    公开(公告)日：2016-09-29

    申请号：US15172667

    申请日：2016-06-03

    Applicant: KLA-Tencor Corporation

    Inventor： Pradeep Vukkadala ,  Sathish Veeraraghavan ,  Jaydeep Sinha ,  Haiguang Chen ,  Michael Kirk

    IPC: G06F17/50

    CPC classification number: G06F17/5018 ,  H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真（IPD）的系统和方法。 根据本公开的一个实施例，利用基于IPD预测的非线性有限元（FE）接触力学模型的一系列Zernike基晶片形状处理。 基于模拟的基于有限元模型的预测过程基本上更有效，并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度，并且需要计算密集模拟。 此外，还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
    28.
    发明授权
    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking 有权
    系统和方法来模拟基于半导体晶片夹持的面内失真预测的有限元模型

    公开(公告)号：US09430593B2

    公开(公告)日：2016-08-30

    申请号：US13735737

    申请日：2013-01-07

    Applicant: KLA-Tencor Corporation

    Inventor： Pradeep Vukkadala ,  Sathish Veeraraghavan ,  Jaydeep Sinha ,  Haiguang Chen ,  Michael Kirk

    IPC: G06F17/10 ,  G06F17/50 ,  H01L21/67

    CPC classification number: G06F17/5018 ,  H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真（IPD）的系统和方法。 根据本公开的一个实施例，利用仿真基于IPD预测的非线性有限元（FE）接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效，并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度，并且需要计算密集模拟。 此外，还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    Prediction Based Chucking and Lithography Control Optimization
    29.
    发明申请
    Prediction Based Chucking and Lithography Control Optimization 审中-公开
    基于预测的卡盘和平版印刷控制优化

    公开(公告)号：US20160239600A1

    公开(公告)日：2016-08-18

    申请号：US14656422

    申请日：2015-03-12

    Applicant: KLA-Tencor Corporation

    Inventor： Bin-Ming Benjamin Tsai ,  Oreste Donzella ,  Pradeep Vukkadala ,  Jaydeep Sinha

    IPC: G06F17/50

    CPC classification number: G03F7/707 ,  G03F7/70783

    Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.

    Abstract translation: 公开了用于优化晶片夹持和光刻控制的基于预测的系统和方法。 计算出当通过夹紧装置夹紧晶片时发生的变形，并用于控制夹紧装置的夹持参数。 夹头参数可以包括夹紧压力和夹紧顺序。 此外，还可以利用预测的失真来促进预期校正的应用。 控制夹持参数和/或应用预期校正有助于减少或最小化重叠错误。

    Detection of selected defects in relatively noisy inspection data
    30.
    发明授权
    Detection of selected defects in relatively noisy inspection data 有权
    检测相对嘈杂的检查数据中选定的缺陷

    公开(公告)号：US09355440B1

    公开(公告)日：2016-05-31

    申请号：US13649080

    申请日：2012-10-10

    Applicant: KLA-Tencor Corporation

    Inventor： Haiguang Chen ,  Michael D. Kirk ,  Stephen Biellak ,  Jaydeep Sinha

    IPC: G06T7/00 ,  G01N21/88

    CPC classification number: G06T7/0012 ,  G01N21/8851 ,  G01N21/95623 ,  G01N2021/8887 ,  G06K9/4633 ,  G06K2209/19 ,  G06T7/0004 ,  G06T7/60 ,  G06T2207/20056 ,  G06T2207/20061 ,  G06T2207/30148

    Abstract: Methods and systems for detection of selected defects in relatively noisy inspection data are provided. One method includes applying a spatial filter algorithm to inspection data acquired across an area on a substrate to determine a first portion of the inspection data that has a higher probability of being a selected type of defect than a second portion of the inspection data. The selected type of defect includes a non-point defect. The inspection data is generated by combining two or more raw inspection data corresponding to substantially the same locations on the substrate. The method also includes generating a two-dimensional map illustrating the first portion of the inspection data. The method further includes searching the two-dimensional map for an event that has spatial characteristics that approximately match spatial characteristics of the selected type of defect and determining if the event corresponds to a defect having the selected type.

    Abstract translation: 提供了用于检测相对噪声检查数据中选定缺陷的方法和系统。 一种方法包括将空间滤波器算法应用于跨越衬底上的区域获取的数据，以确定检查数据的第一部分与检查数据的第二部分相比具有较高选择类型的缺陷概率。 所选择的缺陷类型包括非点缺陷。 通过组合对应于基板上基本上相同的位置的两个或更多个原始检查数据来生成检查数据。 该方法还包括生成示出检查数据的第一部分的二维映射。 该方法还包括搜索具有近似匹配所选类型的缺陷的空间特征的空间特征的事件的二维地图，并且确定该事件是否对应于具有所选类型的缺陷。

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