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88 条记录 (耗时 0.04 秒)

    Radial temperature control for lattice-mismatched epitaxy
    23.
    发明授权
    Radial temperature control for lattice-mismatched epitaxy 失效
    晶格失配外延的径向温度控制

    公开(公告)号：US07534714B2

    公开(公告)日：2009-05-19

    申请号：US11418634

    申请日：2006-05-05

    申请人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    发明人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    IPC分类号： H01L21/28 ,  H01L21/3205

    CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with the substrate. A group-III precursor and a nitrogen precursor are flowed into the processing chamber. The susceptor is heated with a nonuniform temperature profile to heat the substrate. A nitride layer is deposited over the heated substrate with a thermal chemical vapor deposition process within the processing chamber using the group-III precursor and the nitrogen precursor.

    摘要翻译： 公开了制造复合氮化物半导体结构的方法。 基板设置在处理室中的基座上方，基座与基板热连通。 III族前体和氮前体流入处理室。 感受器以不均匀的温度分布被加热以加热基底。 使用III族前体和氮前体，在处理室内利用热化学气相沉积工艺在加热的衬底上沉积氮化物层。

    SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY
    24.
    发明申请
    SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
    具有不断发生的背景区域的障碍物

    公开(公告)号：US20080274604A1

    公开(公告)日：2008-11-06

    申请号：US11744760

    申请日：2007-05-04

    申请人： Errol Sanchez ,  David Carlson ,  Craig Metzner

    发明人： Errol Sanchez ,  David Carlson ,  Craig Metzner

    IPC分类号： H01L21/20 ,  C23C16/00

    CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/52

    摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.

    摘要翻译： 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。 还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

    METHOD AND APPARATUS FOR DETECTION OF NERVOUS SYSTEM DISORDERS
    26.
    发明申请
    METHOD AND APPARATUS FOR DETECTION OF NERVOUS SYSTEM DISORDERS 审中-公开
    用于检测神经系统疾病的方法和装置

    公开(公告)号：US20070249953A1

    公开(公告)日：2007-10-25

    申请号：US11609388

    申请日：2006-12-12

    申请人： Mark Frei ,  Ivan Osorio ,  David Carlson ,  Eric Panken ,  Touby Drew

    发明人： Mark Frei ,  Ivan Osorio ,  David Carlson ,  Eric Panken ,  Touby Drew

    IPC分类号： A61B5/04 ,  A61N1/00

    CPC分类号： A61N1/36082

    摘要： Systems and methods for detecting and/or treating nervous system disorders, such as seizures, are disclosed. Certain embodiments of the invention relate generally to implantable medical devices (IMDs) adapted to detect and treat nervous system disorders in patients with an IMD. Certain embodiments of the invention include detection of seizures based upon comparisons of long-term and short-term representations of physiological signals. Other embodiments include prediction of seizure activity based upon analysis of physiological signal levels. A further embodiment of the invention includes detection of seizure activity following the delivery of therapy.

    摘要翻译： 公开了用于检测和/或治疗诸如癫痫发作的神经系统疾病的系统和方法。 本发明的某些实施方案一般涉及适于检测和治疗患有IMD的患者的神经系统疾病的可植入医疗装置（IMD）。 本发明的某些实施方案包括基于生理信号的长期和短期表示的比较来检测癫痫发作。 其他实施方案包括基于生理信号水平的分析预测癫痫发作活动。 本发明的另一个实施方案包括在递送治疗后检测发作活动。

    Silicon-containing layer deposition with silicon compounds
    27.
    发明申请
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US20070240632A1

    公开(公告)日：2007-10-18

    申请号：US11549033

    申请日：2006-10-12

    申请人： Kaushal Singh ,  Paul Comita ,  Lance Scudder ,  David Carlson

    发明人： Kaushal Singh ,  Paul Comita ,  Lance Scudder ,  David Carlson

    IPC分类号： C30B23/00

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

    Back-Contact Photovoltaic Cells
    28.
    发明申请
    Back-Contact Photovoltaic Cells 审中-公开

    公开(公告)号：US20070137692A1

    公开(公告)日：2007-06-21

    申请号：US11565738

    申请日：2006-12-01

    申请人： David Carlson

    发明人： David Carlson

    IPC分类号： H01L31/00

    CPC分类号： H01L31/022433 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/061 ,  Y02E10/50

    摘要： A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact comprising point contacts positioned over the second surface of the wafer and having a conductivity type opposite to that of the wafer; and a second electrical contact comprising point contacts and positioned over the second surface of the wafer and separated electrically from the first electrical contact and having a conductivity type the same as that of the wafer.

    Light apparatus
    29.
    发明申请
    Light apparatus 失效
    灯光装置

    公开(公告)号：US20070091633A1

    公开(公告)日：2007-04-26

    申请号：US11542370

    申请日：2006-10-03

    申请人： Kevin Harrity ,  Cory Nelson ,  David Carlson ,  Mark Johnson ,  Scott Demarest ,  Matthew Dubin ,  Kenneth Michaels

    发明人： Kevin Harrity ,  Cory Nelson ,  David Carlson ,  Mark Johnson ,  Scott Demarest ,  Matthew Dubin ,  Kenneth Michaels

    IPC分类号： G02B6/00

    CPC分类号： F21S10/04 ,  F21S6/001 ,  F21V3/04 ,  F21Y2115/10 ,  G02B6/0011 ,  Y10S362/80

    摘要： A light apparatus includes one or more light pipes and/or diffusers to transfer and/or diffuse light from a few point light sources to a broader area and to other points. A hollow light pipe includes a light transmissive sidewall that encompasses an interior space, which receives and hides control circuitry for the light sources therein. A bottom end surface of the hollow light pipe is disposed adjacent to one or more light sources and transmits the light therefrom over a relatively large, uniform area. A solid core light pipe has a light receiving end and a light dispersion end having a reflective facet therein. The reflective facet includes a depression forming a reflective surface angularly displaced from a longitudinal axis of the solid core light pipe. A light diffuser surrounding a point source of light is adapted to cause the point source to look like a flame. A light apparatus including the hollow light pipe and the solid core light pipe and/or the light diffuser is adapted to provide a plurality of different light effects, including a multi-color light show through the hollow light pipe and a flame flicker effect through the solid core light pipe.

    摘要翻译： 光装置包括一个或多个光管和/或扩散器，用于将来自几个点光源的光传输和/或漫射到更广泛的区域和其它点。 空心光管包括透光侧壁，其包围内部空间，其接收并隐藏其中的光源的控制电路。 中空光管的底端表面邻近一个或多个光源设置，并且在其上透过较大的均匀区域。 实芯光管具有光接收端和在其中具有反射面的光分散端。 反射小面包括形成从实芯光管的纵向轴线角度位移的反射表面的凹陷。 围绕点光源的光漫射器适于使点源看起来像火焰。 包括中空光管和实芯光管和/或光扩散器的光装置适于提供多种不同的光效果，包括通过中空光管的多色光显示和通过该中空光管的火焰闪烁效果 实芯光管。