Optical semiconductor device and manufacturing method of the same
    21.
    发明授权
    Optical semiconductor device and manufacturing method of the same 有权
    光半导体器件及其制造方法

    公开(公告)号:US07663139B2

    公开(公告)日:2010-02-16

    申请号:US11444420

    申请日:2006-06-01

    IPC分类号: H01L31/00

    摘要: A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.

    摘要翻译: 在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。 在构成侧壁的各个侧壁阻挡层中,形成作为施加拉伸应变的第一侧阻挡层,下侧阻挡层(从底部的最下层到第四层的四层) 每个上侧阻挡层(从第五层到底层的最上层的三层)形成为不具有应变的第二侧面阻挡层。

    Semiconductor device
    22.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07456422B2

    公开(公告)日:2008-11-25

    申请号:US11366597

    申请日:2006-03-03

    IPC分类号: H01L29/06 H01L31/00

    摘要: A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second lattice constant formed on the barrier layer and a side barrier layer of a semiconductor crystal having a third lattice constant, which is formed in contact with the side faces of the plurality of quantum dots, in which the barrier layer, the quantum dots and the side barrier layer are configured so that the difference between the values of the first lattice constant and the second lattice constant has a sign opposite to that of the difference between values of the first lattice constant and the third lattice constant.

    摘要翻译: 包括量子点的半导体器件包括具有第一晶格常数的半导体晶体的阻挡层和包含在阻挡层上形成的具有第二晶格常数的半导体晶体的多个量子点的量子点层和形成在阻挡层上的侧阻挡层 具有第三晶格常数的半导体晶体,其形成为与多个量子点的侧面接触,其中阻挡层,量子点和侧阻挡层被构造成使得 第一晶格常数和第二晶格常数具有与第一晶格常数和第三晶格常数的值之差的符号。

    Semiconductor integrated circuit device, program delivery method, and program delivery system
    23.
    发明申请
    Semiconductor integrated circuit device, program delivery method, and program delivery system 审中-公开
    半导体集成电路设备,程序传递方法和程序传递系统

    公开(公告)号:US20080155272A1

    公开(公告)日:2008-06-26

    申请号:US11797548

    申请日:2007-05-04

    申请人: Kenichi Kawaguchi

    发明人: Kenichi Kawaguchi

    IPC分类号: G06F12/14

    摘要: When an encrypted program and a decryption program are inputted to a first memory, a semiconductor integrated circuit device causes a bus port to disable access from the outside and enables access to the first memory and to a second memory, thereby transferring the encrypted program and the decryption program from the first memory to the second memory. When the transfer is completed, the semiconductor integrated circuit device disables access to the first memory and gives, to a CPU, an instruction to decrypt the encrypted program by using a secret key held in a secret key holder and the decryption program and execute the decrypted program. After the execution of the decrypted program is completed, the semiconductor integrated circuit device disables access to the second memory.

    摘要翻译: 当将加密程序和解密程序输入到第一存储器时,半导体集成电路装置使得总线端口禁止从外部访问,并且能够访问第一存储器和第二存储器,由此传送加密程序和 解密程序从第一个内存到第二个内存。 当传输完成时,半导体集成电路装置禁止对第一存储器的访问,并且通过使用保存在秘密密钥保持器中的秘密密钥和解密程序向CPU给出解密加密程序的指令,并执行解密的 程序。 在完成解密程序的执行之后,半导体集成电路装置禁止访问第二存储器。

    Light emitting device and semiconductor device
    24.
    发明申请
    Light emitting device and semiconductor device 有权
    发光器件和半导体器件

    公开(公告)号:US20080006817A1

    公开(公告)日:2008-01-10

    申请号:US11882988

    申请日:2007-08-08

    申请人: Kenichi Kawaguchi

    发明人: Kenichi Kawaguchi

    IPC分类号: H01L31/00

    CPC分类号: H01L33/34 B82Y10/00 H01L33/06

    摘要: In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate (1) formed from a Si material system, a Si1-x-yGexCy (0

    摘要翻译: 为了能够在由Si材料体系制成的基板上容易地长大发光元件,同时能够防止产生反相域并且能够获得足够高的发光效率的发光元件, 作为包括由Si材料体系形成的衬底(1)的器件,可以使用Si 1-xy N x C y O(0 < x = 1,0 <= y <= 0.005)由直接跃迁型化合物半导体制成的层(2)和量子点(3)。 量子点(3)包括在Si 1-xy≡X≡C y>>>>(((((((((((((((((((((= = = = = = = = = = = = = = (2)形成在基板(1)上。

    Data transfer apparatus and data transfer method

    公开(公告)号:US07127544B2

    公开(公告)日:2006-10-24

    申请号:US09897574

    申请日:2001-07-02

    申请人: Kenichi Kawaguchi

    发明人: Kenichi Kawaguchi

    IPC分类号: G06F13/36

    CPC分类号: G06F13/362

    摘要: A data transfer apparatus for transferring data between a system bus and a local bus at a high speed is provided. A bus bridge 101 is connected between a system bus 132 and a local bus 137. Data transferred between a CPU 133, an I/O device 136 and a main memory 135 on the system bus 132 are retained in an associative memory 106 via an associative memory control unit 105. When an access to this data from an I/O device 138 on the local bus 137 is generated, the data are transferred from the associative memory 106 to the I/O device 138. Thus, when a data transfer request from the I/O device 138 to the main memory 135 is generated, no bus cycle is generated on the system bus 132 as long as this data are retained in the associative memory 106. Consequently, the data can be transferred at a high speed.

    Program translator and processor
    28.
    发明授权
    Program translator and processor 失效
    程序翻译器和处理器

    公开(公告)号:US06658560B1

    公开(公告)日:2003-12-02

    申请号:US09536308

    申请日:2000-03-27

    申请人: Kenichi Kawaguchi

    发明人: Kenichi Kawaguchi

    IPC分类号: G06F938

    CPC分类号: G06F8/447

    摘要: Multiple instructions, specifying equivalent operations but designating different execution units, are stored beforehand on an instruction exchange table. First, a primary compiler compiles a source program into a set of machine-readable instructions. From the set of instructions, an instruction parallelizer generates a set of long instruction words. Specifically, an instruction identifier identifies one of the instructions in the set with one of the instructions stored on the instruction exchange table. Then, an instruction replacer replaces the instruction in question with another one of the instructions that is also stored on the instruction exchange table, specifies an equivalent operation but designates a different execution unit as a target. In this manner, the number of parallelly executable instructions can be increased, while the number of no-operation instructions can be reduced, thus generating a parallelized instruction set at a higher level of parallelism.

    摘要翻译: 指定等效操作但指定不同执行单元的多个指令预先存储在指令交换表上。 首先,主编译器将源程序编译成一组机器可读指令。 指令并行器从该组指令生成一组长指令字。 具体地,指令标识符用存储在指令交换表上的指令之一来识别集合中的一个指令。 然后,指令替换器将指令替换为另一个也存储在指令交换表上的指令,指定等效操作,但指定不同的执行单元作为目标。 以这种方式,可以增加并行可执行指令的数量,同时可以减少无操作指令的数量,从而以更高的并行水平生成并行指令集。

    Light emitting device and semiconductor device
    29.
    发明授权
    Light emitting device and semiconductor device 有权
    发光器件和半导体器件

    公开(公告)号:US07732823B2

    公开(公告)日:2010-06-08

    申请号:US11882988

    申请日:2007-08-08

    申请人: Kenichi Kawaguchi

    发明人: Kenichi Kawaguchi

    IPC分类号: H01L27/15 H01L29/08 H01S5/00

    CPC分类号: H01L33/34 B82Y10/00 H01L33/06

    摘要: In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate (1) formed from a Si material system, a Si1-x-yGexCy (0

    摘要翻译: 为了能够在由Si材料体系制成的基板上容易地长大发光元件,同时能够防止产生反相域并且能够获得足够高的发光效率的发光元件, 作为包括由Si材料体系形成的衬底(1)的器件,由直接形成的Si1-x-yGexCy(0