公开(公告)号：US08274624B2

公开(公告)日：2012-09-25

申请号：US12602604

申请日：2008-05-27

申请人： Takeharu Kitagawa ,  Daisuke Hayashi ,  Hideki Ishida ,  Takeshi Nishibe ,  Nao Murakami

发明人： Takeharu Kitagawa ,  Daisuke Hayashi ,  Hideki Ishida ,  Takeshi Nishibe ,  Nao Murakami

IPC分类号： G02F1/1335

CPC分类号： G02F1/133528 ,  G02B5/3083 ,  G02B27/28 ,  G02F1/133634 ,  G02F2001/133531 ,  G02F2001/133607 ,  G02F2201/50 ,  G02F2202/40 ,  G02F2413/02 ,  G02F2413/07 ,  G02F2413/11 ,  G02F2413/12

摘要： The present invention provides a liquid crystal panel that can provide a neutral display that is free from coloring in every direction. The liquid crystal panel includes a first polarizer 14a, a second polarizer 14b, and a liquid crystal cell 13. The first polarizer 14a is arranged on the visible side of the liquid crystal cell 13 and the second polarizer 14b is arranged on the backlight side of the liquid crystal cell 13. The liquid crystal panel further includes a first retardation layer 11 and a second retardation layer 12. A refractive index ellipsoid of the first retardation layer 11 has a relationship of nx=ny>nz, and a refractive index ellipsoid of the second retardation layer 12 has a relationship of nx>ny≧nz. The first retardation layer 11 and the second retardation layer 12 are arranged between the liquid crystal cell 13 and the second polarizer 14b.

摘要翻译： 本发明提供一种能够提供在各个方向上不着色的中性显示器的液晶面板。 液晶面板包括第一偏振片14a，第二偏振片14b和液晶单元13.第一偏振片14a配置在液晶单元13的可视侧，第二偏振片14b配置在 液晶面板还包括第一延迟层11和第二延迟层12.第一延迟层11的折射率椭圆体的关系为nx = ny> nz，折射率椭圆体的折射率椭圆体 第二延迟层12具有nx>ny≥nz的关系。 第一延迟层11和第二延迟层12布置在液晶单元13和第二偏振器14b之间。

公开(公告)号：US08211232B2

公开(公告)日：2012-07-03

申请号：US12019911

申请日：2008-01-25

申请人： Daisuke Hayashi

发明人： Daisuke Hayashi

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/46

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/4411

摘要： A substrate processing apparatus that can reduce the number of parts. A first gas introduction hole through which the hydrogen fluoride gas is introduced into a GDP is formed in an upper lid. A second gas introduction hole through which hydrogen fluoride gas is introduced from a hydrogen fluoride gas source is formed in a processing vessel. When the upper lid engages the upper portion of the processing vessel, one end of the first gas introduction hole is joined with one end of the second gas introduction hole to form an introduction path through which the hydrogen fluoride gas is introduced into a chamber.

摘要翻译： 可以减少部件数量的基板处理装置。 在上盖中形成有将氟化氢气体引入到GDP中的第一气体导入孔。 在处理容器中形成有从氟化氢气体源引入氟化氢气体的第二气体导入孔。 当上盖接合处理容器的上部时，第一气体导入孔的一端与第二气体导入孔的一端接合，形成引入路径，通过该导入路径将氟化氢气体引入到室内。

公开(公告)号：US20110226420A1

公开(公告)日：2011-09-22

申请号：US13046900

申请日：2011-03-14

申请人： Daisuke Hayashi ,  Shoichiro Matsuyama ,  Koichi Murakami

发明人： Daisuke Hayashi ,  Shoichiro Matsuyama ,  Koichi Murakami

IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/50

CPC分类号： H01J37/3266 ,  H01J37/32091 ,  H01J37/32541

摘要： There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.

摘要翻译： 提供了一种等离子体处理装置，其包括：处理室100，被配置为对晶片W执行等离子体处理; 上部电极105和下部电极110，其配置成在处理室100中彼此面对，并且构成为在其间形成处理空间; 以及与上部电极105和下部电极110中的至少一个连接并构成为向处理室100输出高频电力的高频电源150.上部电极105包括由介电材料制成的上部基座105a 并且在上部基座105a中形成具有等于或小于鞘的厚度的两倍的多个细孔A.

公开(公告)号：US20110155322A1

公开(公告)日：2011-06-30

申请号：US12979875

申请日：2010-12-28

申请人： Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

发明人： Shinji HIMORI ,  Daisuke Hayashi ,  Akitaka Shimizu

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605

摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.

摘要翻译： 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。

公开(公告)号：US20100304505A1

公开(公告)日：2010-12-02

申请号：US12791082

申请日：2010-06-01

申请人： Wataru Shimizu ,  Kazuhiro Kubota ,  Daisuke Hayashi

发明人： Wataru Shimizu ,  Kazuhiro Kubota ,  Daisuke Hayashi

IPC分类号： H01L21/30

CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76826 ,  Y10S438/935

摘要： There is provided a processing method for performing a recovery process on a damaged layer formed on a surface of a low-k film of a target substrate by introducing a processing gas containing a methyl group into a processing chamber. The method includes: increasing an internal pressure of the processing chamber up to a first pressure lower than a processing pressure for the recovery process by introducing a dilution gas into the processing chamber maintained in a depressurized state; then stopping the introduction of the dilution gas, and increasing the internal pressure of the processing chamber up to a second pressure as the processing pressure for the recovery process by introducing the processing gas into a region where the target substrate exists within the processing chamber; and performing the recovery process on the target substrate while the processing pressure is maintained.

摘要翻译： 提供了一种处理方法，用于通过将含有甲基的处理气体引入处理室来对目标衬底的低k膜的表面上形成的损伤层进行恢复处理。 该方法包括：通过将稀释气体引入维持在减压状态的处理室中，将处理室的内部压力提高到低于回收处理的处理压力的第一压力; 然后停止引入稀释气体，并且通过将处理气体引入到处理室内存在目标衬底的区域中，将处理室的内部压力提高到第二压力作为回收处理的处理压力; 并且在维持处理压力的同时对目标基板进行恢复处理。

公开(公告)号：US20100243167A1

公开(公告)日：2010-09-30

申请号：US12748702

申请日：2010-03-29

申请人： Daisuke Hayashi

发明人： Daisuke Hayashi

IPC分类号： H01L21/465

CPC分类号： H01J37/32568 ,  H01J37/32018 ,  H01J37/32458 ,  H01J37/32577 ,  H01J37/32908 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

摘要： A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.

摘要翻译： 一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。 在基板处理装置中，向可动电极和对置电极之间的第一空间施加高频电力，向其中引入处理气体，并且可动电极不与圆筒形室的侧壁接触。 至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。

公开(公告)号：US07787777B2

公开(公告)日：2010-08-31

申请号：US11502534

申请日：2006-08-11

申请人： Shinji Iio ,  Masayuki Suehiro ,  Katsuya Ikezawa ,  Akira Miura ,  Sadaharu Oka ,  Chie Sato ,  Mamoru Hihara ,  Tsuyoshi Yakihara ,  Shin-ichi Nakajima ,  Morio Wada ,  Daisuke Hayashi ,  Shinji Kobayashi ,  Yoshiyuki Asano

发明人： Shinji Iio ,  Masayuki Suehiro ,  Katsuya Ikezawa ,  Akira Miura ,  Sadaharu Oka ,  Chie Sato ,  Mamoru Hihara ,  Tsuyoshi Yakihara ,  Shin-ichi Nakajima ,  Morio Wada ,  Daisuke Hayashi ,  Shinji Kobayashi ,  Yoshiyuki Asano

IPC分类号： H04B10/00 ,  H04B10/20

CPC分类号： H04J14/0227 ,  H04J14/0201 ,  H04J14/0221 ,  H04J14/0241 ,  H04J14/0282 ,  H04J14/0283 ,  H04J14/0284 ,  H04Q11/0062 ,  H04Q11/0066 ,  H04Q2011/0049 ,  H04Q2011/0092

摘要： An optical packet network system of a ring type, capable of preventing degradation of an optical signal, can be implemented by providing a mechanism relatively simple in structure, capable of erasing light noise if the optical packet signal does not exists. In the optical packet network system made up by interconnecting respective nodes adjacent to each other, and connecting a sending source of an optical packet signal to a ring, a light noise removal function block is provided between the respective nodes adjacent to each other.

摘要翻译： 可以通过提供一种结构相对简单的机构来实现能够防止光信号劣化的环形光分组网络系统，如果光分组信号不存在则能够擦除光噪声。 在通过互相相邻的各个节点互连并将光分组信号的发送源连接到环的光分组网络系统中，在彼此相邻的相应节点之间提供光噪声去除功能块。

公开(公告)号：US20100163179A1

公开(公告)日：2010-07-01

申请号：US12086634

申请日：2006-12-12

申请人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

发明人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

IPC分类号： B08B13/00

CPC分类号： H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部 的未经表面氧化处理的Al或Al合金。 室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

公开(公告)号：US20100146741A1

公开(公告)日：2010-06-17

申请号：US12635891

申请日：2009-12-11

申请人： Daisuke Hayashi

发明人： Daisuke Hayashi

IPC分类号： A44B1/28

CPC分类号： A44B1/34

摘要： The present invention relates to a button comprising a button body and a fixture for fixing said button body to a support from the opposite side to the button body with the support therebetween, said button body having an insert hole defined by a wall, for the fixture to be inserted therein, and at least one protrusion for fixing on said support.According to the invention, there is provided a gap between said protrusion and said wall defining said insert hole. (FIG. 1A)

摘要翻译： 按钮本体技术领域本发明涉及一种钮扣，包括按钮体和固定装置，用于将按钮主体固定到与按钮主体相对的一侧的支撑体上，其中支撑件在它们之间，所述按钮主体具有由壁限定的插入孔， 以及至少一个用于固定在所述支撑上的突出部。 根据本发明，提供了所述突起和限定所述插入孔的所述壁之间的间隙。 （图1A）

公开(公告)号：US07686918B2

公开(公告)日：2010-03-30

申请号：US11016997

申请日：2004-12-21

申请人： Hidenori Sato ,  Daisuke Hayashi

发明人： Hidenori Sato ,  Daisuke Hayashi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3405

摘要： A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.

摘要翻译： 磁控管等离子体处理装置具有插入处理空间和排气口之间的挡板，以将等离子体限制在处理室中的处理空间中。 挡板具有允许处理空间和排气口彼此连通的通孔。 挡板沿着板所在的位置处的磁场的磁力线设置。