公开(公告)号：US09034149B2

公开(公告)日：2015-05-19

申请号：US12387377

申请日：2009-05-01

申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

IPC分类号： C23C14/58 ,  C23C14/14 ,  C23C14/02 ,  G01R33/09 ,  G11B5/31 ,  G11B5/39

CPC分类号： C23C14/5833 ,  C23C14/025 ,  C23C14/14 ,  C23C14/5873 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932

摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

摘要翻译： 公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置（HB）层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。 每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。 蚀刻可以在IBD室中进行，并且在蚀刻表面上产生更高浓度的成核位点，从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。 较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。 在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。

公开(公告)号：US20100330395A1

公开(公告)日：2010-12-30

申请号：US12456935

申请日：2009-06-24

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

IPC分类号： G11B5/33 ,  B32B15/01 ,  B05D3/02

CPC分类号： G11B5/332 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/315 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49067 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12819

摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

摘要翻译： 公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层 以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。 （Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。 在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。 在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。 可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

公开(公告)号：US20100172053A1

公开(公告)日：2010-07-08

申请号：US12660908

申请日：2010-03-05

申请人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC分类号： G11B5/187 ,  B05D1/36

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

摘要翻译： 用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US07688555B2

公开(公告)日：2010-03-30

申请号：US10868716

申请日：2004-06-15

申请人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

摘要翻译： 用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US20050275975A1

公开(公告)日：2005-12-15

申请号：US10868716

申请日：2004-06-15

申请人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

摘要翻译： 用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层 另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。 上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US08107201B2

公开(公告)日：2012-01-31

申请号：US12660908

申请日：2010-03-05

申请人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

摘要翻译： 用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US09021685B2

公开(公告)日：2015-05-05

申请号：US12075605

申请日：2008-03-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/127 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/31 ,  G11C11/16 ,  H01L43/12

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01L43/12 ,  Y10T29/49034

摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

公开(公告)号：US20130082787A1

公开(公告)日：2013-04-04

申请号：US13200844

申请日：2011-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

摘要翻译： 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

公开(公告)号：US08379351B2

公开(公告)日：2013-02-19

申请号：US12073895

申请日：2008-03-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。

公开(公告)号：US20130001189A1

公开(公告)日：2013-01-03

申请号：US13561206

申请日：2012-07-30

申请人： Tong Zhao ,  Hui Chuan Wang ,  Min Li ,  Kunliang Zhang

发明人： Tong Zhao ,  Hui Chuan Wang ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49052

摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.

摘要翻译： 公开了具有FL1 /插入/ FL2配置的复合自由层，其中用弱等离子体蚀刻处理FL1的顶表面，以实现增强的dR / R，同时保持低的RA和TMR或GMR传感器中的低λ。 弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。 薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。 当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。