Display device and manufacturing method thereof

    公开(公告)号:US11469352B2

    公开(公告)日:2022-10-11

    申请号:US16698980

    申请日:2019-11-28

    Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

    Picking apparatus capable of picking up target micro-elements

    公开(公告)号:US11357145B2

    公开(公告)日:2022-06-07

    申请号:US16693399

    申请日:2019-11-25

    Abstract: A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes a main body and a plurality of picking portions. The picking portions connect with and protrude from the main body. Each of the picking portions has a first surface. The first surfaces are away from the main body and configured to pick up the micro elements. The main body has a second surface at least partially located between the picking portions. Each of the first surfaces has a first viscosity. The second surface has a second viscosity. The second viscosity is less than the first viscosity.

    Pixel structure
    23.
    发明授权

    公开(公告)号:US11018182B2

    公开(公告)日:2021-05-25

    申请号:US16171334

    申请日:2018-10-25

    Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

    Display Device and Manufacturing Method Thereof

    公开(公告)号:US20210135063A1

    公开(公告)日:2021-05-06

    申请号:US16698980

    申请日:2019-11-28

    Abstract: A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

    Light Emitting Structure, Light Device and Backlight Module
    29.
    发明申请
    Light Emitting Structure, Light Device and Backlight Module 有权
    发光结构,灯光装置和背光模块

    公开(公告)号:US20160365491A1

    公开(公告)日:2016-12-15

    申请号:US14887451

    申请日:2015-10-20

    CPC classification number: H01L33/504 G02B6/0003 G02B6/0035 G02B6/0073

    Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.

    Abstract translation: 本公开提供了包括蓝色光源,第一荧光材料层和第二荧光材料层的发光结构。 蓝色光源具有发光面。 第一荧光体层覆盖蓝色光源的发光面。 第一荧光材料层由第一荧光材料构成。 第一荧光体的激发带为蓝色波段,第一荧光体的发光带为绿色波段。 第二荧光材料层覆盖第一荧光材料层。 第二荧光材料层由第二荧光材料构成。 第二荧光体的激发带为绿色波段,第二荧光体的发光带为红色波段。 本文还提供了一种灯装置和背光模块。

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