公开(公告)号：US20230197892A1

公开(公告)日：2023-06-22

申请号：US18106671

申请日：2023-02-07

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Kiseong JEON ,  Jinhong PARK ,  Hwankuk YUH

IPC: H01L33/08 ,  H01L25/075 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H01L33/38 ,  H05K1/11

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L33/382 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H05K1/111 ,  H01L33/62

Abstract: A display device, including a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting devices electrically connected to the metal pads. A respective semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer, a conductive electrode on the p-type semiconductor layer; and a passivation layer configured to surround the respective semiconductor light emitting device and including a through hole through which the conductive electrode is exposed. Further, the conductive electrode includes a protruding portion protruding through the through hole of the passivation layer and overlapping outer surfaces of the passivation layer. Also, the protruding portion of the conductive electrode contacts a corresponding metal pad, and a width of the protruding portion of the conductive electrode is greater than a width of the corresponding metal pad.

公开(公告)号：US20230079059A1

公开(公告)日：2023-03-16

申请号：US17798664

申请日：2020-02-13

Applicant: LG ELECTRONICS INC.

Inventor： Younho HEO ,  Jinhyung LEE ,  Seongmin MOON ,  Changseo PARK

IPC: H01L21/673 ,  H01L33/00

Abstract: A substrate for manufacturing a display device according to the present invention includes a base part; assembly electrodes extending in one direction and disposed on the base part at predetermined intervals; an etch stop layer formed on at least a portion of the base part; a barrier wall part formed on the etch stop layer while forming a cell on which a semiconductor light emitting device is mounted along an extension direction of the assembly electrodes. The etch stop layer is formed on at least a first region in which the assembly electrodes are formed among the entire region of the base part.

公开(公告)号：US20230015395A1

公开(公告)日：2023-01-19

申请号：US17780880

申请日：2019-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Jinhyung LEE ,  Changseo PARK ,  Younho HEO ,  Kisu KIM ,  Seongmin MOON

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a display device including a base portion; a first electrode formed on the base portion; a barrier rib portion stacked on the first electrode while forming a plurality of cells; a second electrode formed on the barrier rib portion; and semiconductor light emitting diodes seated in the plurality of cells, wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween.

公开(公告)号：US20220351993A1

公开(公告)日：2022-11-03

申请号：US17621107

申请日：2019-07-09

Applicant: LG ELECTRONICS INC.

Inventor： Changhyun JEONG ,  Seongmin MOON ,  Changseo PARK ,  Donghae OH

IPC: H01L21/67 ,  H01L21/683 ,  H01L25/075

Abstract: Discussed is an assembly board including: a base portion; a plurality of assembly electrodes extending in one direction and disposed on the base portion at predetermined intervals; a dielectric layer stacked on the base portion to cover the plurality of assembly electrodes; and barrier ribs stacked on the dielectric layer and defining cells in which semiconductor light emitting diodes are seated at the predetermined intervals along an extending direction of the plurality of assembly electrodes so as to overlap a portion of the plurality of assembly electrodes, wherein the plurality of assembly electrodes include first electrodes and second electrodes disposed on different planes on the base portion, and wherein the first electrodes are disposed on one surface of the base portion, and the second electrodes are disposed on one surface of the dielectric layer.

公开(公告)号：US20200303592A1

公开(公告)日：2020-09-24

申请号：US16894262

申请日：2020-06-05

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Changseo PARK ,  Bongchu SHIM ,  Byoungkwon CHO ,  Hyunwoo CHO

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.

公开(公告)号：US20150372183A1

公开(公告)日：2015-12-24

申请号：US14841159

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil JIN ,  Hyunjung PARK ,  Youngho CHOE ,  Changseo PARK

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/035272 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract translation: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

公开(公告)号：US20150357507A1

公开(公告)日：2015-12-10

申请号：US14734870

申请日：2015-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung YANG ,  Junghoon CHOI ,  Changseo PARK ,  Hyungjin KWON

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

Abstract translation: 讨论的是制造太阳能电池的方法。 该方法包括在半导体衬底上形成隧穿层; 在隧道层上形成半导体层，其中半导体层的形成包括沉积半导体材料; 以及形成连接到所述半导体层的电极。 隧道层在比室温高且压力低于大气压的温度下形成。

公开(公告)号：US20150270415A1

公开(公告)日：2015-09-24

申请号：US14729857

申请日：2015-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil JIN ,  Goohwan SHIM ,  Youngho CHOE ,  Changseo PARK

IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。

公开(公告)号：US20140332060A1

公开(公告)日：2014-11-13

申请号：US14341637

申请日：2014-07-25

Applicant: LG ELECTRONICS INC.

Inventor： Chulchae CHOI ,  Changseo PARK ,  Jinsung KIM ,  Jaewon CHANG ,  Hyungseok KIM ,  Youngho CHOE ,  Philwon YOON

IPC: H01L31/0224 ,  H01L31/048

CPC classification number: H01L31/022441 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: A solar cell is disclosed. The solar cell includes a substrate of a first conductive type; a plurality of emitter layers having a second conductive type opposite the first conductive type, the plurality of emitter layers positioned in a first surface of the substrate and extended in a first direction in the first surface of the substrate; a plurality of surface field layers having the first conductive type more heavily doped than the substrate, the plurality of surface field layers positioned in the first surface of the substrate and extended in the first direction in the first surface of the substrate; a passivation layer positioned on the first surface of the substrate and including a plurality of first openings exposing portions of each of the plurality of surface field layers and a plurality of second openings exposing portions of each of the plurality of emitter layers; a plurality of first electrodes positioned in the plurality of first openings and contacting the plurality of surface field layers; a plurality of second electrodes positioned in the plurality of second openings and contacting the plurality of emitter layers; a plurality of first conductive members positioned on the plurality of first electrodes; and a plurality of second conductive members positioned on the plurality of second electrodes.

Abstract translation: 公开了一种太阳能电池。 太阳能电池包括第一导电类型的衬底; 多个发射极层，具有与第一导电类型相反的第二导电类型，多个发射极层位于基板的第一表面中，并在基板的第一表面中沿第一方向延伸; 具有比衬底更重掺杂的第一导电类型的多个表面场层，所述多个表面场层位于衬底的第一表面中并在衬底的第一表面中沿第一方向延伸; 钝化层，位于所述基板的第一表面上，并且包括暴露所述多个表面场层中的每一个的部分的多个第一开口和暴露所述多个发射极层中的每一个的部分的多个第二开口; 多个第一电极，其定位在所述多个第一开口中并接触所述多个表面场层; 多个第二电极，位于所述多个第二开口中并接触所述多个发射极层; 定位在所述多个第一电极上的多个第一导电构件; 以及定位在所述多个第二电极上的多个第二导电构件。

公开(公告)号：US20240332475A1

公开(公告)日：2024-10-03

申请号：US18697320

申请日：2021-09-30

Applicant: LG ELECTRONICS INC.

Inventor： Jungsub KIM ,  Changseo PARK ,  Gunho KIM ,  Yongil SHIN ,  Yoonchul KIM

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753

Abstract: The display device includes a substrate, first assembly wiring, second assembly wiring, a partition, and first to third semiconductor light emitting devices. Each of the plurality of pixels includes first to third sub-pixels. The first to third assembly holes are located in the first to third sub-pixels. The first assembly wiring includes a first bus wiring in a plurality of pixels, and a plurality of first branch wirings branching from the first bus wiring. The second assembly wiring includes a second bus wiring in a plurality of pixels, and a plurality of second branch wirings branching from the second bus wiring. Each of the first to third semiconductor light emitting devices may be disposed in first to third assembly holes between the first bus wiring, the second bus wiring, the first branch wiring, and the second branch wiring.