公开(公告)号：US20130142034A1

公开(公告)日：2013-06-06

申请号：US13813112

申请日：2011-07-29

Applicant: Liu Yang ,  Haifeng Zhao

Inventor： Liu Yang ,  Haifeng Zhao

IPC: H04L12/56

CPC classification number: H04L45/22 ,  H04L45/02 ,  H04L45/28

Abstract: A method for routing switch is disclosed. The method comprises: when a network device forwards traffic through N equal-cost multi-path (ECMP) routes to a destination, if M of these routes are inactive, then for each inactive route, determining an alternative route for replacing the inactive route from N-M active routes, and modifying the inactive route to the alternative route so as to switch the traffic of the inactive route onto the alternative route, wherein N and M are positive integer numbers, with N being greater than or equal to 2 and M being greater than or equal to 1 and smaller than N.

Abstract translation: 公开了路由交换机的方法。 该方法包括：当网络设备通过N个等价多路径（ECMP）路由将流量转发到目的地时，如果这些路由的M不活跃，则对于每个非活动路由，确定用于替换不活动路由的替代路由 NM活动路由，并修改到替代路由的不活动路由，以将非活动路由的业务切换到替代路由，其中​​N和M是正整数，其中N大于或等于2，并且M更大 大于等于1且小于N.

公开(公告)号：US20120286701A1

公开(公告)日：2012-11-15

申请号：US13465375

申请日：2012-05-07

Applicant: Liu Yang ,  Fang Sheng

Inventor： Liu Yang ,  Fang Sheng

IPC: H05B33/12

CPC classification number: C09K11/7774 ,  C09K11/7731 ,  C09K11/7734 ,  H01L33/504

Abstract: The LED (light emitting diode) light source that includes an LED chip or an array of LED chips that emit blue, or UV, violet, or other narrow wavelength light and a phosphor conversion coating that absorbs the radiation from the LED and re-emits lights of longer wavelengths and with wider spectrum of wavelength. The phosphor conversion coating includes a plurality of layered phosphor films wherein adjacent phosphor films are formed of different phosphor materials. A method of forming an LED light source includes soldering LED chip to an electrically insulating substrate and forming a phosphor conversion layer. Forming the phosphor conversion layer includes depositing a number of adjacent phosphor films directly on the surface of the LED chip or on the surface of an optically transparent substrate which may be of curved or flat surface.

Abstract translation: LED（发光二极管）光源，其包括发射蓝色的LED芯片或LED芯片的阵列，或UV，紫色或其他窄波长的光和荧光体转换涂层，其吸收来自LED的辐射并再次发射 较长波长的光和更宽的波长谱线。 荧光体转换涂层包括多个层状荧光体膜，其中相邻的荧光膜由不同的荧光体材料形成。 形成LED光源的方法包括将LED芯片焊接到电绝缘基板上并形成荧光体转换层。 形成荧光体转换层包括直接在LED芯片的表面上或在可以是弯曲或平坦表面的光学透明基板的表面上沉积多个相邻的磷光体膜。

公开(公告)号：US08298628B2

公开(公告)日：2012-10-30

申请号：US12476734

申请日：2009-06-02

Applicant: Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

Inventor： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Kazuhide Hasebe ,  Masanobu Matsunaga ,  Masato Yonezawa ,  Hansong Cheng

IPC: C23C16/00 ,  H05H1/24

CPC classification number: H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract translation: 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US20110150389A1

公开(公告)日：2011-06-23

申请号：US12643922

申请日：2009-12-21

Applicant: Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

Inventor： Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

IPC: G02B6/26

CPC classification number: G02B6/29395 ,  G02B6/3594

Abstract: A wavelength selective switch (WSS) with hitless switching. The WSS includes the fiber collimator array, the focusing lens, collimating lens, diffraction grating, focusing lens, and attenuation reflection unit array. Each attenuation reflection unit has an interconnected transmission-type MEMS attenuator and a one-dimension MEMS reflector. The transmission-type MEMS attenuator is positioned in the front of the one-dimension MEMS reflector. The central axis of the transmission-type MEMS attenuator aligns and coincides with that of the one-dimension MEMS reflector, with the two central axes being glued together. The WSS of the present invention effectively utilizes the combination of a one-dimension reflector array and a transmission-type optical attenuator chip. With the use of one-dimension reflector array, instead of the known two-dimension reflector array, the complexity of design and manufacture is greatly reduced, thereby reducing the production costs of the switch.

Abstract translation: 具有无间断切换的波长选择开关（WSS）。 WSS包括光纤准直器阵列，聚焦透镜，准直透镜，衍射光栅，聚焦透镜和衰减反射单元阵列。 每个衰减反射单元具有互连的透射型MEMS衰减器和一维MEMS反射器。 传输型MEMS衰减器位于一维MEMS反射器的前面。 传输型MEMS衰减器的中心轴与一维MEMS反射器的中心轴对准并重合，两个中心轴被粘合在一起。 本发明的WSS有效地利用了一维反射器阵列和透射型光衰减器芯片的组合。 使用一维反射器阵列，而不是已知的二维反射器阵列，大大降低了设计和制造的复杂性，从而降低了开关的生产成本。

公开(公告)号：US07960205B2

公开(公告)日：2011-06-14

申请号：US12272886

申请日：2008-11-18

Applicant: Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

Inventor： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

IPC: H01L21/00

CPC classification number: C23C16/45531 ,  C23C16/305 ,  C23C16/45527 ,  C23C16/45553

Abstract: The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

Abstract translation: 本发明是使用选自原子层沉积和化学气相沉积的方法制造锗 - 锑 - 碲合金膜的方法，其中甲硅烷基碲前驱物被用作合金膜的碲源，并且是 在沉积过程中与醇反应。

公开(公告)号：US20110078162A1

公开(公告)日：2011-03-31

申请号：US12570023

申请日：2009-09-30

Applicant: Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

Inventor： Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

IPC: G06F17/30

CPC classification number: G06F17/30867

Abstract: Described is a summarizing a web entity (e.g., a person, place, product or so forth) based upon the entity's appearance in web documents (e.g., on the order of hundreds of millions or billions of webpages). Webpages are separated into blocks, which are then processed according to various features to filter the number of blocks to further process, and rank the most relevant blocks with respect to the entity that remain. A redundancy removal mechanism removes redundant blocks, leaving a set of remaining blocks that are used to provide a summary of information that is relevant to the entity.

Abstract translation: 描述了基于实体在web文档中的出现（例如，数亿或数十亿个网页的数量级）来汇总web实体（例如，人，地点，产品等）。 网页被分成块，然后根据各种特征来处理块以过滤块的数量以进一步处理，并且相对于保留的实体排列最相关的块。 冗余删除机制去除冗余块，留下一组用于提供与该实体相关的信息摘要的剩余块。

公开(公告)号：US06449132B1

公开(公告)日：2002-09-10

申请号：US09522517

申请日：2000-03-10

Applicant: Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

Inventor： Liu Yang ,  Jumna Ramdular ,  Sara L. Gordon ,  Ralph D. Knox ,  John E. Dzarnoski

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/3109

Abstract: A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.

Abstract translation: 根据本发明的用于MR磁头的氮化硅电介质膜包含约38％至44体积％的Si，约35％至37体积％的N和约21％至24％的 电介质膜通过等离子体增强化学气相沉积（PECVD）在较低温度下形成。 将能够反应形成氮化硅的多种气体引入PECVD反应器。 在反应器中产生电场以产生等离子体。 反应器中的气体在存在电场的情况下反应形成氮化硅电介质膜。

公开(公告)号：US09696052B2

公开(公告)日：2017-07-04

申请号：US13179770

申请日：2011-07-11

Applicant: Mark Malchiondo ,  Liu Yang

Inventor： Mark Malchiondo ,  Liu Yang

IPC: F24F11/04 ,  G05D22/00 ,  G05D22/02 ,  F24F3/14 ,  F24F11/00

CPC classification number: F24F11/0012 ,  F24F11/30 ,  F24F11/56 ,  F24F11/58 ,  F24F11/64 ,  F24F11/74 ,  F24F2110/10 ,  F24F2110/20 ,  F24F2130/00 ,  F24F2130/10

Abstract: A controller is provided for HVAC equipment. The controller receives a set of internal temperature values, and a set of external temperature values, the set of external temperature values representing at least one non-current temperature. The controller determines a predictive internal temperature value from the set of internal temperature values and a predictive external temperature value from the set of external temperature values. The controller receives an internal humidity value representing humidity within the premise, the controller further controls the HVAC equipment to modify the humidity within the premise when the received internal humidity value is different from a humidity set point; and the humidity set point is regulated by a humidity limit value, the humidity limit value being where condensation forms, the humidity limit value being calculated using the predictive internal temperature value and the predictive external temperature value.

公开(公告)号：US08229960B2

公开(公告)日：2012-07-24

申请号：US12570023

申请日：2009-09-30

Applicant: Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

Inventor： Zaiqing Nie ,  Ji-Rong Wen ,  Liu Yang

IPC: G06F17/00

CPC classification number: G06F17/30867

Abstract: Described is a summarizing a web entity (e.g., a person, place, product or so forth) based upon the entity's appearance in web documents (e.g., on the order of hundreds of millions or billions of webpages). Webpages are separated into blocks, which are then processed according to various features to filter the number of blocks to further process, and rank the most relevant blocks with respect to the entity that remain. A redundancy removal mechanism removes redundant blocks, leaving a set of remaining blocks that are used to provide a summary of information that is relevant to the entity.

Abstract translation: 描述了基于实体在web文档中的出现（例如，数亿或数十亿个网页的数量级）来汇总web实体（例如，人，地点，产品等）。 网页被分成块，然后根据各种特征来处理块以过滤块的数量以进一步处理，并且相对于保留的实体排列最相关的块。 冗余删除机制去除冗余块，留下一组用于提供与该实体相关的信息摘要的剩余块。

公开(公告)号：US20120171378A1

公开(公告)日：2012-07-05

申请号：US13156501

申请日：2011-06-09

Applicant: Manchao Xiao ,  Xinjian Lei ,  Liu Yang

Inventor： Manchao Xiao ,  Xinjian Lei ,  Liu Yang

IPC: C23C16/30 ,  B05D3/10

CPC classification number: C23C16/305 ,  C23C16/45553

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本发明公开了使用化学气相沉积（CVD）工艺，原子层沉积（ALD）工艺或湿法工艺的金属硫族化合物的合成。 有机甲硅烷基碲或有机甲硅烷基硒与一系列具有亲核取代基的金属化合物的配体交换反应产生金属硫族化物。 该化学物质用于沉积锗 - 锑碲（GeSbTe）和锗 - 锑 - 硒（GeSbSe）膜或其他碲和硒基金属化合物用于相变记忆和光伏器件。