Metal ion reduction in top anti-reflective coatings for photoresists
    21.
    发明授权
    Metal ion reduction in top anti-reflective coatings for photoresists 失效
    用于光致抗蚀剂的顶部抗反射涂层中的金属离子还原

    公开(公告)号:US5516886A

    公开(公告)日:1996-05-14

    申请号:US258898

    申请日:1994-06-10

    CPC分类号: G03F7/091

    摘要: The present invention provides methods for producing top anti-reflective coating compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such top anti-reflective coating compositions.

    摘要翻译: 本发明提供了利用特殊处理的离子交换树脂生产具有非常低水平金属离子的顶部抗反射涂料组合物的方法。 还提供了一种用于制造使用这种顶部抗反射涂层组合物的半导体器件的方法。

    Antireflective Coating Composition
    24.
    发明申请
    Antireflective Coating Composition 有权
    防反射涂料组合物

    公开(公告)号:US20090246691A1

    公开(公告)日:2009-10-01

    申请号:US12060307

    申请日:2008-04-01

    IPC分类号: G03F7/004 G03F7/00

    CPC分类号: G03F7/091

    摘要: The present invention relates to an antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, at least one unit of structure 2. where, R1 to R12 are independently selected from hydrogen and C1-C4 alkyl, structure. 1 has a configuration selected from cis, trans or mixture thereof, and x and y are the mole % of the monomeric units in the polymer. The invention also relates to a process for manufacturing a microelectronic device.

    摘要翻译: 本发明涉及一种抗反射组合物,其包含热酸产生剂和环氧聚合物,其包含至少一个结构单元1,至少一个结构单元,其中R1至R12独立地选自氢和C1-C4烷基, 结构体。 1具有选自顺式,反式或其混合物的构型,x和y是聚合物中单体单元的摩尔%。 本发明还涉及一种用于制造微电子器件的方法。

    Photoactive Compounds
    26.
    发明申请
    Photoactive Compounds 失效
    光活性化合物

    公开(公告)号:US20080153032A1

    公开(公告)日:2008-06-26

    申请号:US11613403

    申请日:2006-12-20

    摘要: The present application relates to a compound of formula where X is selected from the group CF3SO3, C4F9SO3, N(SO2C2F5)2, N(SO2CF3SO2C4F9), N(SO2C3F7)2, N(SO2C4F9)2, CF3CHFO(CF2)2SO3, and CH3CH2CH2O(CF2)4SO3. A photoresist composition comprising a polymer containing an acid labile group, the above compounds, and one or more additional photoacid generators is also provided for.

    摘要翻译: 本申请涉及下式的化合物,其中X选自CF 3,SO 3,C 4 H 9, N(SO 2 CO 2)3 N 2 SO 2, >,N(SO 2,CF 3)3,SO 3,S 3,N 3, N(SO 2)2,N(SO 2 H 2 SO 3) CF 3(CH 2)2 CF 3,CF 3 CH 2(CF 2) 2 3 3和CH 3 3 CH 2 CH 2 O(CF 3) 4 3 3。 还提供了包含含有酸不稳定基团的聚合物,上述化合物和一种或多种另外的光酸产生剂的光致抗蚀剂组合物。

    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
    28.
    发明授权
    Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
    用于深紫外光刻的光致抗蚀剂组合物,其包含光活性化合物的混合物

    公开(公告)号:US06991888B2

    公开(公告)日:2006-01-31

    申请号:US10439472

    申请日:2003-05-16

    摘要: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

    摘要翻译: 本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物,能够在深紫外线的曝光波长下成像。 本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。 新型光致抗蚀剂包含a)含有酸不稳定基团的聚合物,和b)光活性化合物的新混合物,其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物 ,其中R 1和R 2 R 5,R 6,R 7,或N R 8,R 9和R 9在本文中定义; m = 1-5; X - 是阴离子,Ar选自萘基,蒽基和结构3,其中R 30,R 31,R SUB > 32,R 33和R 34在本文中定义。

    Process for producing film forming resins for photoresist compositions
    29.
    发明授权
    Process for producing film forming resins for photoresist compositions 失效
    用于制造光致抗蚀剂组合物的成膜树脂的方法

    公开(公告)号:US06610465B2

    公开(公告)日:2003-08-26

    申请号:US09833226

    申请日:2001-04-11

    IPC分类号: G03F732

    摘要: The present invention provides a method for producing a film forming resin suitable for use in a photoresist composition, involving the following steps: (a) providing a solution of a film forming resin in a solvent; (b) providing the following two filter sheets: (i) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid and particulate ion exchange resin particles, where the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and (ii) a filter sheet containing a self-supporting matrix of fibers having immobilized therein particulate filter aid and binder resin; (c) rinsing the filter sheets of step (b) with the solvent of step (a); and (d) passing the solution of the film forming resin through the rinsed filter sheets of step (c).

    摘要翻译: 本发明提供一种适用于光致抗蚀剂组合物的成膜树脂的制造方法,包括以下步骤:(a)在成膜剂中提供成膜树脂的溶液; (b)提供以下两个过滤片:(i)含有固定有微粒过滤助剂和粒状离子交换树脂颗粒的自支撑纤维基质的过滤片,其中颗粒助滤剂和离子交换树脂颗粒基本上分布 均匀地遍布所述基质的横截面; 和(ii)含有固定有颗粒助滤剂和粘合剂树脂的纤维自支撑基质的过滤片; (c)用步骤(a)的溶剂冲洗步骤(b)的过滤片; 和(d)使成膜树脂的溶液通过步骤(c)的冲洗过的滤纸。

    Photoresist composition for deep UV and process thereof
    30.
    发明授权
    Photoresist composition for deep UV and process thereof 失效
    用于深紫外线的光致抗蚀剂组合物及其工艺

    公开(公告)号:US06447980B1

    公开(公告)日:2002-09-10

    申请号:US09619336

    申请日:2000-07-19

    IPC分类号: G03C1492

    摘要: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

    摘要翻译: 本发明涉及一种化学放大系统,其对300nm至100nm之间的波长敏感,并且包括a)不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物,b)具有能力的化合物 在辐射时产生酸。 本发明包括由脂环烃烯烃,具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。 本发明还涉及这种光致抗蚀剂的成像方法。