Abstract:
A method of producing a dielectric ceramic composition is disclosed which includes the steps of: preparing a main ceramic composition comprising BaO, TiO.sub.2 and RE.sub.2 O.sub.3 (where RE represents at least one rare earth metal) as major components; calcining a mixture of starting materials which give the main ceramic composition, at a temperature of 1050.degree. C. or higher, to provide a calcined mixture; finely pulverizing the calcined mixture to provide a calcined ceramic powder having an average grain size of not larger than 0.8 .mu.m; and adding, as at least a part of a secondary component, a B.sub.2 O.sub.3 powder or a glass powder containing B.sub.2 O.sub.3, to the main ceramic composition. Also disclosed are a dielectric resonator and dielectric filter using such a dielectric ceramic composition as produced according to the above method, and a method of producing such a dielectric resonator or filter.
Abstract translation:公开了一种制备电介质陶瓷组合物的方法,其包括以下步骤:制备包含BaO,TiO 2和RE 2 O 3(其中RE表示至少一种稀土金属)作为主要组分的主要陶瓷组合物; 在1050℃或更高的温度下煅烧得到主要陶瓷组合物的起始材料的混合物,以提供煅烧混合物; 将煅烧后的混合物粉碎,得到平均粒径不大于0.8μm的煅烧陶瓷粉末; 并将作为至少一部分次要成分的B 2 O 3粉末或含有B 2 O 3的玻璃粉末添加到主要陶瓷组合物中。 还公开了使用根据上述方法制造的这种介电陶瓷组合物的介质谐振器和介质滤波器以及制造这种介质谐振器或滤波器的方法。
Abstract:
To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate, the film is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.
Abstract:
A semiconductor device has a first interconnection pattern formed on a semiconductor substrate, and a second interconnection pattern located in and over a through hole formed at a composite insulating layer structure. The composite insulating layer structure is constituted by a first inorganic insulating film and an organic insulating film. At a peripheral region of the second interconnection pattern, the organic insulating film is partially eliminated to form an eliminated portion. The semiconductor device also has a second inorganic insulating film which is formed over the organic insulating film and is directly formed on the first inorganic insulating film, via the eliminated portion.
Abstract:
A plasma chemical vapor deposition apparatus comprises a reaction chamber, electrodes provided in the reaction chamber and a side wall constituting part of the reaction chamber and having a wafer access opening, at least the side wall having its surface portion covered with an insulating member. The insulating member prevents abnormal discharge between the electrodes and side wall.
Abstract:
This invention relates to a continuously treating line for a steel band, having a heating furnace by directly flaming. For heating the steel band with causing reduction, the heating furnace of directly flaming system is provided with a plurality of heating burners of reduction system which may form non-equilibrium range of the air and the fuel in a flame, that is, a reduction range, wherein the heating burners are positioned at predetermined arrangement with respect to the steel band and at a certain pitch predetermined in relation with an inner diameter of the burner in a line running direction.The treating line has said heating furnace constructed as mentioned above and a subsequent atmosphere furnace, and said atmosphere furnace may be provided with a sealing chamber having various means for avoiding invasion of the outer air.The line has, in order, a pre-heating furnace, said heating furnace and an indirectly heating furnace, and it may be furnished with intermediate chambers between respective furnaces for preventing the furnace gas from moving, and further may be furnished with an after-burning chamber for perfectly burning a combustion exhaust gas to be supplied to the pre-heating chamber.
Abstract:
A curable epoxy resin composition, comprising (1) an alicyclic epoxy resin having an average of more than one epoxy group per molecule, (2) a polybasic acid hydrazide, and (3) a latent curing agent for said epoxy resin which comprises an addition product obtained by reacting (a) a polyfunctional epoxy compound with (b) a compound having at least one functional group in the molecule selected from the group consisting of OH, SH, COOH and CONHNH.sub.2 together with a tertiary amino group, or by reacting said components (a) and (b) with (c) an organic compound which has more than two active hydrogen atoms in the molecule, said reactions occurring under conditions in which the ratio of (a) to (b) or (a) to (b) and (c) ranges from 0.8 to 2.5 equivalents of (a) per equivalent of the total active hydrogen atoms in component (b) and in components (b) and (c), the molar ratio of (c) to (b) being 0.2:1 to 1:1, and said addition product having a softening point of 60.degree. to 180.degree. C.
Abstract:
A semiconductor device with a bonding section comprising a semiconductor substrate, a silicon layer formed on the semiconductor substrate with a first insulating layer interposed therebetween, and a bonding pad formed on the silicon layer with a second insulating layer interposed therebetween. The silicon layer has substantially the same size as the bonding pad. When a lead line is bonded to the bonding pad, the silicon layer lessens the stress caused by the bonding.
Abstract:
A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.
Abstract:
An addition product obtained by reacting (a) a polyfunctional epoxy compound and (b) a compound having at least one functional group of OH group, SH group, COOH group and CONHNH.sub.2 group together with a tertiary amino group in the molecule, and an addition product obtained (a), (b) and (c) an organic compound having two or more active hydrogen atoms in the molecule (excluding a compound having an epoxy group or tertiary amino group) are good curing agents for epxoy resin. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resin-based compositions.
Abstract:
Hydrazides of the formula ##STR1## are good curing agents for epoxy resin, in the formula R.sub.1 and R.sub.2 being each hydrogen atom, C.sub.1 -C.sub.8 alkyl radical or --CH.sub.2 CH.sub.2 SCH.sub.3, R being hydrogen atom or methyl radical. The curing agents are useful in formulating novel storable one-package, heat-curable epoxy resins-based compositions.