摘要:
A semiconductor laser device may include a structure formed separately of a light radiating region, and an electrode for injecting carriers over the light radiating region. A gap is formed between the light radiating region and the structure to introduce an air-bridge structure into the aforementioned electrode so that the capacitive component resulting from a presence of the electrode is drastically reduced.
摘要:
An ultrasonic microscope comprises an ultrasonic pulse transmitting/receiving circuit for emitting an ultrasonic to a sample and receiving an echo from it, a scanner for scanning the sample in a direction normal to the direction of emitting the ultrasonic pulse, an extraction circuit for sampling the output signal of the ultrasonic pulse transmitting/receiving circuit at a given duration and at given intervals to extract echo data signals of plural depths in the sample, a first memory for storing B mode image data attained by a single scanning, a second memory for storing, as 3D image data, the B mode image data sequentially read out from the first memory, an image processor for reading out the image data from the second memory for image processing, and a display device for displaying the processed image data as a 2D or 3D image.
摘要:
In a single-lens reflex camera having an objective lens, a focusing screen and a view finder, a photodetector array is arranged to receive a central part of an object image formed by the objective lens and a focusing condition of the objective lens is detected by calculating an evaluation function from image signals supplied from the photodetectors. A presetting dial for selecting given photodetectors whose image signals are used for detecting the focusing condition is provided at such a position that a part of the dial is exposed to the outside through an opening formed in a rear wall of a camera body at a position underneath a film winding lever. A light emitting diode array is provided on the focusing screen so as to be seen by a user through the view finder. Only desired light emitting diodes are lighted on under the control of a signal supplied by the dial to indicate the region of the photodetector array which is used for detecting the focusing condition.
摘要:
A high strength and high toughness welding material containing: C: 0.05-0.15%, Si: 0.25-0.70%, Mn: 0.60-1.80%, Ni: 4.5-11.0%, Cr: 0.20-1.20%, Mo: 0.20-0.60%, Ti: 0.03-0.12%, Cr+Mo: from 0.40% to 0.030.times.(Ni%).sup.2 by weight and the balance essentially iron.
摘要:
A focus detection system is provided in which an image of an object is projected onto an array comprising a plurality of light acceptor elements, formed by photoelectric elements, to cause them to produce photoelectric signals in accordance with the distribution of light intensity of the image. The photoelectric signals are converted into digital equivalents, and an absolute magnitude of a difference between digital signals of adjacent elements is calculated. These absolute magnitudes are arranged in the sequence of their magnitude, and a given number of them is accumulated, starting from the largest one. The accumulated value is utilized as the value of an evaluation function which indicates the sharpness of the image.
摘要:
In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.
摘要:
A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要:
In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要:
There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
摘要:
It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 μm wavelength band laser device suitable for several to several ten km short distance fiber optic transmission and also a less power consuming optical communication module in which such a laser is preferably mounted.As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, a angled mirror structure is formed at the laser's emitting edge to change the optical output direction so that the light is emitted from the top or bottom of the substrate.