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    Semiconductor laser having a multiple quantum well structure doped with impurities
    4.
    发明授权
    Semiconductor laser having a multiple quantum well structure doped with impurities 失效
    具有掺杂有杂质的多量子阱结构的半导体激光器

    公开(公告)号：US4881235A

    公开(公告)日：1989-11-14

    申请号：US41410

    申请日：1987-04-23

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。