公开(公告)号：US07048797B2

公开(公告)日：2006-05-23

申请号：US10665075

申请日：2003-09-22

申请人： Masaki Mizutani ,  Takehiko Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Takehiko Yoshino ,  Shoji Nishida

IPC分类号： C30B19/06

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/28

摘要： A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epitaxy which comprises a crystallizing material dissolved in a solvent in a supersaturated state and which is flowing in a solution flow passage, and while said plurality of substrates being moved by virtue of said flowing solution in said solution flow passage, a crystal film is grown on the surfaces of said plurality of substrates which are in contact with said flowing solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

摘要翻译： 一种用于相对于其一个侧表面在多个基板上连续生长晶体膜的液相生长方法，其特征在于，所述多个基板保持在用于液相外延的流动溶液的表面上，所述流动溶液包括 结晶材料溶解在过饱和状态的溶剂中，并且在溶液流动通道中流动，并且当所述多个基板通过所述流动溶液在所述溶液流动通道中移动时，在所述溶液流动通道的表面上生长晶体膜 与所述流动溶液接触的多个基板。 适用于实施所述液相生长过程的液相生长装置。

公开(公告)号：US06756289B1

公开(公告)日：2004-06-29

申请号：US09638398

申请日：2000-08-15

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成 （b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层 在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06500731B1

公开(公告)日：2002-12-31

申请号：US09662604

申请日：2000-09-14

申请人： Katsumi Nakagawa ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shoji Nishida

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  H01L21/76259 ,  H01L21/76838 ,  H01L31/022433 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/1804 ,  H01L31/1896 ,  H01L2221/68359 ,  H01L2924/3025 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor device module comprises the steps of forming a first substrate having a separation layer having thereon a plurality of independent semiconductor layers and semiconductor devices individually formed on the plurality of semiconductor layers, electrically connecting the semiconductor devices one another on the first substrate, and separating the plurality of semiconductor layers from the first substrate at the separation layer to transfer the semiconductor layers to a second substrate.

摘要翻译： 一种制造半导体器件模块的方法包括以下步骤：形成具有分离层的第一衬底，其上具有多个独立的半导体层和分别形成在所述多个半导体层上的半导体器件，所述半导体器件分别形成在所述多个半导体层上， 衬底，并且在分离层处将多个半导体层与第一衬底分离，以将半导体层转移到第二衬底。

公开(公告)号：US06391108B2

公开(公告)日：2002-05-21

申请号：US09208377

申请日：1998-12-10

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： C30B1900

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06

摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.

摘要翻译： 提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到 溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。 还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有 至少硅原子进入溶剂。 这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

公开(公告)号：US06211038B1

公开(公告)日：2001-04-03

申请号：US09047325

申请日：1998-03-25

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

IPC分类号： H01L2176

CPC分类号： H01L21/76259

摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

摘要翻译： 制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含 通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。 励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。 从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

公开(公告)号：US06602767B2

公开(公告)日：2003-08-05

申请号：US09769329

申请日：2001-01-26

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

IPC分类号： H01L2120

CPC分类号： H01L21/02032 ,  H01L21/76259 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.

摘要翻译： 用于转移多孔层的方法包括通过阳极氧化在晶体硅构件的一侧上形成多孔层，将支撑衬底固定在多孔层的表面上，并向支撑衬底和多孔层中的任何一个施加力， 由此多孔层的至少一部分从结晶硅构件上被切割并转移到支撑衬底上。 结晶硅元件可以循环利用，这种方法适合以低成本批量生产半导体器件或太阳能电池。

公开(公告)号：US06384313B2

公开(公告)日：2002-05-07

申请号：US09790589

申请日：2001-02-23

申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

IPC分类号： H01L2500

CPC分类号： H01L31/042 ,  H01L31/0443 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure it is possible to simplify the formation of a bypass diode invention therefore provide solar cell module with high reliability at a low cost.

摘要翻译： 太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。 电极具有未被第一半导体层覆盖的区域。 第二半导体层具有由沟槽分隔开的主区域和子区域。 一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。 在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。 利用这种结构，可以简化旁路二极管发明的形成，因此以低成本提供高可靠性的太阳能电池模块。

公开(公告)号：US06231667B1

公开(公告)日：2001-05-15

申请号：US09200867

申请日：1998-11-27

申请人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

发明人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

IPC分类号： C30B1906

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06

摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.

摘要翻译： 浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作 在退火室中进行与上述基板不同的另一基板。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为 在退火室中进行。 这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。 此外，还提供了液相生长方法。

公开(公告)号：US07077901B2

公开(公告)日：2006-07-18

申请号：US10402214

申请日：2003-03-31

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

IPC分类号： C30B19/02

CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

公开(公告)号：US06566277B1

公开(公告)日：2003-05-20

申请号：US09664340

申请日：2000-09-18

申请人： Katsumi Nakagawa ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shoji Nishida

IPC分类号： H01L2130

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02625 ,  H01L21/02628

摘要： The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate.

摘要翻译： 本发明提供一种制造半导体衬底的方法，其包括以下步骤：在适当控制的温度下在液相中在衬底上生长第一半导体层，以消除缺陷，并在液相中在第一半导体层上生长第二半导体层 更高的温度; 通过包括通过液相生长法生产的半导体衬底的第一层和第二层的表面进行阳极氧化的步骤的方法制造的太阳能电池; 液相生长装置，包括用于储存熔体的装置，用于改变所储存的熔体温度的装置，以及使含氧基材与熔体接触的装置，其中使衬底与熔体接触， 以抑制在衬底表面上生长的半导体层中包含的堆垛层错。