公开(公告)号：US06756289B1

公开(公告)日：2004-06-29

申请号：US09638398

申请日：2000-08-15

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成 （b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层 在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06211038B1

公开(公告)日：2001-04-03

申请号：US09047325

申请日：1998-03-25

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

IPC分类号： H01L2176

CPC分类号： H01L21/76259

摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

摘要翻译： 制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含 通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。 励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。 从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

公开(公告)号：US06602767B2

公开(公告)日：2003-08-05

申请号：US09769329

申请日：2001-01-26

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

IPC分类号： H01L2120

CPC分类号： H01L21/02032 ,  H01L21/76259 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.

摘要翻译： 用于转移多孔层的方法包括通过阳极氧化在晶体硅构件的一侧上形成多孔层，将支撑衬底固定在多孔层的表面上，并向支撑衬底和多孔层中的任何一个施加力， 由此多孔层的至少一部分从结晶硅构件上被切割并转移到支撑衬底上。 结晶硅元件可以循环利用，这种方法适合以低成本批量生产半导体器件或太阳能电池。

公开(公告)号：US06190937B1

公开(公告)日：2001-02-20

申请号：US08999132

申请日：1997-12-29

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2176

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  H01L2221/68368 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔 （b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在 多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06258698B1

公开(公告)日：2001-07-10

申请号：US09046600

申请日：1998-03-24

申请人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2130

CPC分类号： H01L21/2007

摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

摘要翻译： 提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体 在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤， 在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。 这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

公开(公告)号：US06452091B1

公开(公告)日：2002-09-17

申请号：US09614548

申请日：2000-07-12

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： H01L2102

CPC分类号： H01L21/76259 ,  H01L21/304 ,  Y10T156/1002 ,  Y10T156/1028 ,  Y10T156/1041 ,  Y10T156/1048 ,  Y10T156/1049

摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

摘要翻译： 进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于 剥离的单晶。 该单晶体用于太阳能电池和图像显示元件的驱动电路部件。 提供了当从基板剥离时防止单晶层的质量和产量降低的方法。 制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。 因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

公开(公告)号：US06605518B1

公开(公告)日：2003-08-12

申请号：US09558657

申请日：2000-04-26

申请人： Kazuaki Ohmi ,  Katsumi Nakagawa ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Takao Yonehara

发明人： Kazuaki Ohmi ,  Katsumi Nakagawa ,  Nobuhiko Sato ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Takao Yonehara

IPC分类号： H01L2146

CPC分类号： H01L21/76259 ,  Y10S438/96

摘要： To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.

摘要翻译： 为了在分离层中的固定位置产生裂纹，分离复合构件的方法包括在复合构件内部形成分离层的步骤，在分离层的内部形成面内应力的应力提升层 集中制造到不会由于面内应力而产生分离，扩大面内应力，引起应力提升层的裂纹，从而分离复合部件。

公开(公告)号：US07077901B2

公开(公告)日：2006-07-18

申请号：US10402214

申请日：2003-03-31

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

IPC分类号： C30B19/02

CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

公开(公告)号：US5712199A

公开(公告)日：1998-01-27

申请号：US466761

申请日：1995-06-06

申请人： Katsumi Nakagawa ,  Takao Yonehara

发明人： Katsumi Nakagawa ,  Takao Yonehara

IPC分类号： H01L31/04 ,  C30B15/00 ,  C30B15/34 ,  C30B19/06 ,  H01L21/208 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/1876 ,  C30B15/007 ,  C30B15/34 ,  H01L31/0392 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of making a semiconductor body includes the steps of preparing a sheet-like substrate having an insulating film and holes which pass through the insulating film, the holes being disposed at a uniform density, preparing a solution in which a semiconductor material is dissolved, and conveying the sheet-like substrate along a surface of the solution so as to grow a single crystal nucleus from each of the holes and thereby form a set of single crystal semiconductors on the sheet-like substrate. A solar cell can be manufactured by forming a semiconductor active area on the sheet-like support member made of a conductive material by a process containing the above-described semiconductor body forming method, and then by forming an electrode which makes a pair with the sheet-like support member.

摘要翻译： 制造半导体本体的方法包括以下步骤：制备具有绝缘膜的片状基材和穿过绝缘膜的孔，孔以均匀的密度设置，制备半导体材料溶解的溶液， 并且沿着溶液的表面输送片状基材，以从每个孔生长单晶核，从而在片状基材上形成一组单晶半导体。 可以通过通过包含上述半导体本体形成方法的工艺在由导电材料制成的片状支撑构件上形成半导体有源区域来制造太阳能电池，然后通过形成与片材成对的电极 类支撑构件。

公开(公告)号：US07282190B2

公开(公告)日：2007-10-16

申请号：US10563115

申请日：2005-05-17

申请人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

发明人： Masaki Mizutani ,  Shoji Nishida ,  Katsumi Nakagawa

IPC分类号： C01B33/26 ,  C30B15/20

CPC分类号： H01L31/182 ,  C30B19/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02658 ,  Y02E10/546 ,  Y02P70/521

摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

摘要翻译： 通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成 硅层中的pn结。 因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。