公开(公告)号：US20050161620A1

公开(公告)日：2005-07-28

申请号：US11086589

申请日：2005-03-23

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G03F1/22 ,  G03F7/20 ,  G21K1/087 ,  H01J37/147 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/08 ,  G21G5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3174 ,  H01J2237/31776

摘要： Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

公开(公告)号：US06914252B2

公开(公告)日：2005-07-05

申请号：US10763175

申请日：2004-01-26

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G03F1/22 ,  G03F7/20 ,  G21K1/087 ,  H01J37/147 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/02 ,  G21G5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3174 ,  H01J2237/31776

摘要： Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

摘要翻译： 为带电束产生源准备了两个或多个阶段的掩模。 一个掩模具有布置成格子形状的矩形孔的第一孔径部分和在相应的第一孔径部分偏转梁的电极。 另一个掩模具有第二孔径部分，其具有用于使通过或穿过第一孔部分的梁的成形的基本图形孔。 将半导体装置的布局数据分为基准图的尺寸，这些尺寸考虑到曝光量的降低，以便根据基本图形进行分类。 成形为分割布置的重叠部分的形式的光束和分类的基本图形被发射到样品上。

公开(公告)号：US06818364B2

公开(公告)日：2004-11-16

申请号：US10843431

申请日：2004-05-12

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G03F900

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.

公开(公告)号：US06703629B2

公开(公告)日：2004-03-09

申请号：US09912365

申请日：2001-07-26

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G21K510

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3174 ,  H01J2237/31776

摘要： Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

摘要翻译： 为带电束产生源准备了两个或多个阶段的掩模。 一个掩模具有布置成格子形状的矩形孔的第一孔径部分和在相应的第一孔径部分偏转梁的电极。 另一个掩模具有第二孔径部分，其具有用于使通过或穿过第一孔部分的梁的成形的基本图形孔。 将半导体装置的布局数据分为基准图的尺寸，这些尺寸考虑到曝光量的降低，以便根据基本图形进行分类。 成形为分割布置的重叠部分的形式的光束和分类的基本图形被发射到样品上。

公开(公告)号：US06376136B1

公开(公告)日：2002-04-23

申请号：US09465932

申请日：1999-12-17

申请人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

发明人： Tetsuro Nakasugi ,  Yuichiro Yamazaki ,  Hideaki Abe

IPC分类号： G03F900

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

摘要翻译： 带电束曝光方法包括对样品施加电压从而在样品上形成加速电场的步骤，加速从电子枪发射的电子束并用电子扫描样品上形成的对准标记的步骤 通过检测器检测从对准标记产生的反向散射电子和二次电子的步骤，基于检测到的信号波形获取对准标记的位置的步骤，消除或减少对准标记的步骤 通过改变向样品施加的电压的加速电场，以及基于对准标记的位置的信息，用电子枪发射的电子束曝光图案的步骤。

公开(公告)号：US5994030A

公开(公告)日：1999-11-30

申请号：US30888

申请日：1998-02-26

申请人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174

摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

公开(公告)号：US09188879B2

公开(公告)日：2015-11-17

申请号：US13600123

申请日：2012-08-30

申请人： Kentaro Kasa ,  Manabu Takakuwa ,  Ryoichi Inanami ,  Kazuto Matsuki ,  Tetsuro Nakasugi ,  Hiroshi Koizumi ,  Minoru Inomoto

发明人： Kentaro Kasa ,  Manabu Takakuwa ,  Ryoichi Inanami ,  Kazuto Matsuki ,  Tetsuro Nakasugi ,  Hiroshi Koizumi ,  Minoru Inomoto

IPC分类号： G03B27/58 ,  G03F7/20

CPC分类号： G03F7/70783 ,  G03F7/707

摘要： According to one embodiment, a substrate holding apparatus includes a main unit and a plurality of first support units. The main unit has a major surface. The main unit has a plate configuration. The first support units are disposed on the major surface. Each of the first support units includes a suction-holding unit capable of holding a substrate by suction. The suction-holding unit is movable along a first direction perpendicular to the major surface and a second direction parallel to the major surface.

摘要翻译： 根据一个实施例，一种基板保持装置包括主单元和多个第一支撑单元。 主机具有主要表面。 主机具有板配置。 第一支撑单元设置在主表面上。 每个第一支撑单元包括能够通过抽吸来保持基板的吸持保持单元。 抽吸保持单元可沿垂直于主表面的第一方向和平行于主表面的第二方向移动。

公开(公告)号：US08895210B2

公开(公告)日：2014-11-25

申请号：US13680415

申请日：2012-11-19

申请人： Masato Suzuki ,  Tetsuro Nakasugi

发明人： Masato Suzuki ,  Tetsuro Nakasugi

IPC分类号： G03F1/62 ,  G03F1/64 ,  G03F1/68

CPC分类号： G03F1/62 ,  G03F1/68

摘要： An aspect of the present embodiment, there is provided a method for fabricating a pellicle, including acquiring a shape of a pellicle frame, deciding a thickness distribution of an adhesive to be coated on the pellicle frame on a basis of the acquired shape of the pellicle frame, and coating the adhesive on the pellicle frame based on the decision of the thickness distribution.

摘要翻译： 本实施例的一个方面，提供了一种防护薄膜组件的制造方法，其特征在于，获取防护薄膜组件的形状，根据取得的防护薄膜组件的形状来确定要涂布在防护薄膜框架上的粘合剂的厚度分布 框架，并且基于厚度分布的决定将粘合剂涂覆在防护薄膜框架上。

公开(公告)号：US20130130158A1

公开(公告)日：2013-05-23

申请号：US13680415

申请日：2012-11-19

申请人： Masato Suzuki ,  Tetsuro Nakasugi

发明人： Masato Suzuki ,  Tetsuro Nakasugi

IPC分类号： G03F1/62 ,  G03F1/68

CPC分类号： G03F1/62 ,  G03F1/68

摘要： An aspect of the present embodiment, there is provided a method for fabricating a pellicle, including acquiring a shape of a pellicle frame, deciding a thickness distribution of an adhesive to be coated on the pellicle frame on a basis of the acquired shape of the pellicle frame, and coating the adhesive on the pellicle frame based on the decision of the thickness distribution.

摘要翻译： 本实施例的一个方面，提供了一种防护薄膜组件的制造方法，其特征在于，获取防护薄膜组件的形状，根据取得的防护薄膜组件的形状来确定要涂布在防护薄膜框架上的粘合剂的厚度分布 框架，并且基于厚度分布的决定将粘合剂涂覆在防护薄膜框架上。

公开(公告)号：US08419995B2

公开(公告)日：2013-04-16

申请号：US12563461

申请日：2009-09-21

申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

IPC分类号： B28B11/08 ,  B29C35/08

CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。