公开(公告)号：US5463271A

公开(公告)日：1995-10-31

申请号：US90228

申请日：1993-07-09

Applicant: Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

Inventor： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC: H01J1/14 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are chemically bonded to the electronegative atoms. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.

Abstract translation: 阴极结构含有化学键合到含碳阴极（10）的由氧和/或氟组成的电负性原子（22）。 正电性金属的原子（24R）与电负性原子化学键合。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。

公开(公告)号：US4576676A

公开(公告)日：1986-03-18

申请号：US497620

申请日：1983-05-24

Applicant: Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

Inventor： Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

IPC: C30B13/00 ,  C30B13/34 ,  C30B1/08

CPC classification number: C30B13/34 ,  C30B13/00 ,  C30B29/64 ,  Y10S438/973

Abstract: To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (

Abstract translation: 为了在异质基底上的厚（>1μm）膜中获得均匀的纹理，大的晶粒或在一些情况下为单晶取向，形成薄（<1μm） 某一部分。 区域熔融重结晶在薄部分开始，然后延伸到厚部分。 该方法可以采用取向滤波器图案的平面收缩图案。

公开(公告)号：US4565599A

公开(公告)日：1986-01-21

申请号：US680237

申请日：1984-12-10

Applicant: Michael W. Geis ,  Henry I. Smith ,  Dimitri A. Antoniadis ,  Dale C. Flanders

Inventor： Michael W. Geis ,  Henry I. Smith ,  Dimitri A. Antoniadis ,  Dale C. Flanders

IPC: C30B1/02 ,  C30B13/00 ,  C30B13/34 ,  H01L21/20 ,  C30B1/08

CPC classification number: H01L21/2022 ,  C30B1/02 ,  C30B13/00 ,  C30B13/34 ,  C30B29/64 ,  Y10S117/913 ,  Y10S148/152

Abstract: Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.

Abstract translation: 描述了用于获得外延或优选取向膜的图案外延工艺的改进，其中在要取向的膜上形成材料盖，人造表面浮雕结构可存在于基板，盖或两者中，并且膜可以 用电磁辐射照射加热。

公开(公告)号：US4562106A

公开(公告)日：1985-12-31

申请号：US617311

申请日：1984-06-04

Applicant: Michael W. Geis ,  Henry I. Smith

Inventor： Michael W. Geis ,  Henry I. Smith

IPC: C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  B32B33/00

CPC classification number: C30B27/00 ,  C30B13/00 ,  C30B13/28 ,  C30B29/60 ,  Y10S148/06 ,  Y10T428/24802

Abstract: A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.

Abstract translation: 诸如硅晶片上的热生长二氧化硅的薄膜的衬底涂覆有通过化学气相沉积沉积的厚度范围为0.05-10μm的多晶或非晶硅薄膜。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以在膜中形成位错和晶体缺陷 夹带在与条纹相关的位置跟随条纹图案。

公开(公告)号：US08818150B2

公开(公告)日：2014-08-26

申请号：US11731338

申请日：2007-03-30

Applicant: Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

Inventor： Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

IPC: G02B6/26

CPC classification number: G02F1/025 ,  B82Y20/00 ,  G02F1/0136

Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Abstract translation: 通过向波导施加偏置电压来调制硅波导中的辐射的强度和极化两者的方法和装置。

公开(公告)号：US07880204B2

公开(公告)日：2011-02-01

申请号：US11541975

申请日：2006-10-02

Applicant: Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/144 ,  H01L31/102

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US06413781B1

公开(公告)日：2002-07-02

申请号：US09287591

申请日：1999-04-06

Applicant: Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

Inventor： Michael W. Geis ,  Roderick R. Kunz ,  Margaret B. Stern

IPC: G01N2500

CPC classification number: G01N1/40 ,  G01N30/30 ,  G01N2001/022 ,  Y10T436/25375 ,  Y10T436/255 ,  G01N2030/3015 ,  G01N2030/3076

Abstract: The method and apparatus of the invention create a dynamic Soret effect for propelling a target chemical constituent along a pathway. A moving temperature profile impressed upon the pathway produces consecutive alternating warmer and cooler zones along the path which transport components of a mixture down the path according to their respective diffusivities. In one embodiment, the invention provides a dynamic thermophoretic concentrator for separating a target chemical constituent from a mixture of components on the basis of diffusion coefficient by using alternate forward and backward motion of a temperature profile along the pathway, thereby accumulating an ultimate concentration of the target constituent greater than its initial concentration in the mixture.

Abstract translation: 本发明的方法和装置产生用于沿着途径推进目标化学成分的动态Soret效应。 沿路径移动的移动温度曲线沿着路径产生连续交替的加热器和冷却器区域，根据它们各自的扩散率将混合物的组分沿着路径输送。 在一个实施方案中，本发明提供了一种动态热解聚焦器，用于通过使用沿着路径的温度分布的交替的向前和向后运动，基于扩散系数从组分混合物中分离目标化学成分，从而累积最终浓度 目标成分大于其混合物中的初始浓度。

公开(公告)号：US5990604A

公开(公告)日：1999-11-23

申请号：US17361

申请日：1998-02-02

Applicant: Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

Inventor： Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30457

Abstract: Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.

Abstract translation: 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

公开(公告)号：US5729094A

公开(公告)日：1998-03-17

申请号：US632026

申请日：1996-04-15

Applicant: Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

IPC: H01J1/304 ,  H01J19/02

CPC classification number: H01J1/304

Abstract: An energetic-electron emitter providing electrons having kinetic energies on the order of one thousand electron volts without acceleration through vacuum. An average electric field of 10.sup.5 V/m to 10.sup.10 V/m applied across a layer of emissive cathode material accelerates electrons inside the layer. The cathode material is a high-dielectric strength, rigid-structure, wide-bandgap semiconductors, especially type Ib diamond. A light-emitting device incorporates the energetic-electron emitter as a source of excitation to luminescence.

Abstract translation: 能量电子发射体提供具有一千电子伏特的动能的电子，而没有加速通过真空。 施加在发射阴极材料层上的105V / m至1010V / m的平均电场加速层内的电子。 阴极材料是高介电强度，刚性结构的宽带隙半导体，特别是Ib型金刚石。 发光装置将能量 - 电子发射体作为激发源发光。

公开(公告)号：US5728435A

公开(公告)日：1998-03-17

申请号：US445618

申请日：1995-05-22

Applicant: Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

Inventor： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC: H01J1/14 ,  H01J1/304 ,  H05H1/24 ,  B05D5/12

CPC classification number: H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A cathode structure is formed by a process in which a carbon-containing electron-emissive cathode is subjected to electronegative atoms that include oxygen and/or fluorine. The cathode is also subjected to atoms of electropositive metal, typically after being subjected to the atoms of oxygen and/or fluorine. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.

Abstract translation: 通过其中含碳电子发射阴极经受包括氧和/或氟的电负性原子的方法形成阴极结构。 阴极还经受正电性金属原子，通常在经受氧和/或氟的原子之后。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。