公开(公告)号：US4576676A

公开(公告)日：1986-03-18

申请号：US497620

申请日：1983-05-24

Applicant: Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

Inventor： Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

IPC: C30B13/00 ,  C30B13/34 ,  C30B1/08

CPC classification number: C30B13/34 ,  C30B13/00 ,  C30B29/64 ,  Y10S438/973

Abstract: To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (

Abstract translation: 为了在异质基底上的厚（>1μm）膜中获得均匀的纹理，大的晶粒或在一些情况下为单晶取向，形成薄（<1μm） 某一部分。 区域熔融重结晶在薄部分开始，然后延伸到厚部分。 该方法可以采用取向滤波器图案的平面收缩图案。

公开(公告)号：US4632723A

公开(公告)日：1986-12-30

申请号：US481096

申请日：1983-03-31

Applicant: Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

Inventor： Henry I. Smith ,  Harry A. Atwater ,  Carl V. Thompson ,  Michael W. Geis

IPC: C30B13/34 ,  C30B13/06

CPC classification number: C30B13/34 ,  Y10S117/913 ,  Y10S117/918

Abstract: A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

Abstract translation: 将基材涂覆以重结晶的膜。 在膜中产生结晶阻挡层的图案，例如通过蚀刻膜中的空隙。 通常应用包封层以保护膜，填充空隙，否则增强再结晶过程。 进行重结晶，使得某些取向通常优先通过势垒，通常由于生长速度各向异性。 结果是具有特定的预定晶体取向，取向范围或一组离散取向的薄膜。

公开(公告)号：US09455146B2

公开(公告)日：2016-09-27

申请号：US12928762

申请日：2010-12-17

Applicant: Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

Inventor： Harry A. Atwater ,  Marina S. Leite ,  Emily C. Warmann ,  Dennis M. Callahan

IPC: H01L29/06 ,  H01L21/18

CPC classification number: H01L21/187

Abstract: A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

Abstract translation: 虚拟衬底包括手柄支撑件和手柄支撑件上的应变消除的单晶层。 制造虚拟衬底的方法包括在初始生长衬底上生长相干应变的单晶层，去除初始生长衬底以减轻单晶层上的应变，并将应变消除的单晶层施加在手柄支撑件上 。

公开(公告)号：US08808933B2

公开(公告)日：2014-08-19

申请号：US12957065

申请日：2010-11-30

Applicant: Michael D. Kelzenberg ,  Harry A. Atwater ,  Ryan M. Briggs ,  Shannon W. Boettcher ,  Nathan S. Lewis ,  Jan A. Petykiewicz

Inventor： Michael D. Kelzenberg ,  Harry A. Atwater ,  Ryan M. Briggs ,  Shannon W. Boettcher ,  Nathan S. Lewis ,  Jan A. Petykiewicz

IPC: H01M6/30 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/068

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Abstract translation: 描述了包括半导体结构阵列，半导体材料之间的填充材料和一个或多个光俘获元件的结构。 基于这种结构的光转换器和光电化学装置也被描述。

公开(公告)号：US20130298985A1

公开(公告)日：2013-11-14

申请号：US13876652

申请日：2011-09-29

Applicant: Davis S. Darvish ,  Harry A. Atwater

Inventor： Davis S. Darvish ,  Harry A. Atwater

IPC: H01L21/02 ,  H01L31/0336 ,  H01L29/24

CPC classification number: H01L21/02565 ,  C30B23/04 ,  C30B29/16 ,  H01L29/242 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/072 ,  H01L33/005 ,  Y02E10/50

Abstract: The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like.

Abstract translation: 本发明提供了制造更高质量p-n异质结的策略，其中掺入了氧化亚铜和适用于形成异质结的另一种材料。 当纳入微电子器件时，预期这些改进的异质结将提供改进的微电子特性，例如改善的缺陷密度，特别是在pn异质结处的较低的界面缺陷密度，导致改进的微电子器件，例如具有改进的开路电压的太阳能电池器件， 填充因子，效率，电流密度等。

公开(公告)号：US20130240026A1

公开(公告)日：2013-09-19

申请号：US13602115

申请日：2012-09-01

Applicant: Harry A. Atwater ,  Naomi Coronel ,  Lise Lahourcade

Inventor： Harry A. Atwater ,  Naomi Coronel ,  Lise Lahourcade

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/032 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/02631 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

Abstract: The disclosure provides semiconductive material derived from group IV elements that are useful for photovoltaic applications.

Abstract translation: 本公开提供衍生自可用于光伏应用的IV族元素的半导体材料。

公开(公告)号：US08507307B2

公开(公告)日：2013-08-13

申请号：US13160681

申请日：2011-06-15

Applicant: Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

Inventor： Gregory M. Kimball ,  Marty W. DeGroot ,  Nathan S. Lewis ,  Harry A. Atwater

IPC: H01L31/109

CPC classification number: H01L31/18 ,  H01L31/032 ,  H01L31/0321 ,  H01L31/068 ,  Y02E10/547

Abstract: The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

Abstract translation: 本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。 特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体 物种），其与并入作为晶格取代基的IIB / VA族半导体中的至少一种VA族物质具有充分的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族 半导体以其他方式，例如，作为掺杂剂等）。

公开(公告)号：US20110186119A1

公开(公告)日：2011-08-04

申请号：US12928964

申请日：2010-12-23

Applicant: Harry A. Atwater ,  Vivian Ferry ,  Albert Polman ,  Ruud Schropp ,  Marc Verschuuren

Inventor： Harry A. Atwater ,  Vivian Ferry ,  Albert Polman ,  Ruud Schropp ,  Marc Verschuuren

IPC: H01L31/0232 ,  H01L31/0352

CPC classification number: H01L31/0232 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/0352 ,  H01L31/056 ,  Y02E10/52

Abstract: A solar cell includes a nano-scale patterned back contact layer; a spacer layer on the nano-scale patterned back contact layer; a semiconductor layer on the spacer layer; and a light transmissive first electrode on the semiconductor layer.

Abstract translation: 太阳能电池包括纳米级图案化的背接触层; 在纳米尺度图案化的背接触层上的间隔层; 间隔层上的半导体层; 以及半导体层上的透光第一电极。

公开(公告)号：US20090057839A1

公开(公告)日：2009-03-05

申请号：US12176065

申请日：2008-07-18

Applicant: Nathan S. LEWIS ,  Katherine E. Plass ,  Joshua M. Spurgeon ,  Harry A. Atwater

Inventor： Nathan S. LEWIS ,  Katherine E. Plass ,  Joshua M. Spurgeon ,  Harry A. Atwater

IPC: H01L21/20 ,  H01L29/06

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  Y10S438/962

Abstract: A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such a structure include forming the semiconductor structures on a substrate, casting a binder material onto the substrate to embed the semiconductor structures in the binder material, and separating the binder material from the substrate at the substrate. These methods provide for the retention of the orientation and order of highly ordered semiconductor structures in the separated binder material.

Abstract translation: 由嵌入在粘合剂材料中的有序半导体结构组成的结构，其维持半导体结构的排序和取向。 用于形成这种结构的方法包括在基底上形成半导体结构，将粘合剂材料浇铸到基底上以将半导体结构嵌入粘合剂材料中，并在基片上将粘合剂材料与基底分离。 这些方法提供了在分离的粘合剂材料中保持高度有序的半导体结构的取向和顺序。

公开(公告)号：US07346248B2

公开(公告)日：2008-03-18

申请号：US11497935

申请日：2006-08-01

Applicant: Harry A. Atwater ,  Kaushik Bhattacharya ,  Kaushik Dayal ,  Matthew Dicken ,  Demetri Psaltis ,  Axel Scherer ,  Guruswami Ravichandran

Inventor： Harry A. Atwater ,  Kaushik Bhattacharya ,  Kaushik Dayal ,  Matthew Dicken ,  Demetri Psaltis ,  Axel Scherer ,  Guruswami Ravichandran

IPC: G02B6/00

CPC classification number: G02F1/03 ,  B82Y20/00 ,  G02B6/3574 ,  G02F2202/32

Abstract: Systems and methods for manipulating light with tunable ferroelectric photonic devices. Devices having tunable properties that exhibit photonic bandgap behavior are fabricated from ferroelectric materials. Apparatus is provided to apply tuning signals to the ferroelectric material using one or more of electric fields, mechanical forces, optical fields, and thermal fields. Control circuitry is provided to generate the control signals needed to apply the tuning signals. Input and output ports are provided to allow input signals to be received and to provide output signals. In some cases, a feedback loop is provided to use a portion of the output signal as a diagnostic signal for control of the operation of the device within an acceptable range. It is expected that ferroelectric photonic devices operating according to principles of the invention will be useful for a wide variety of applications, including optical switching, optical modulation, optical computing, and performing logic optically.

Abstract translation: 用可调谐铁电光子器件操纵光的系统和方法。 具有光子带隙特性的具有可调谐特性的器件由铁电材料制成。 提供了使用电场，机械力，光场和热场中的一个或多个来将调谐信号施加到铁电材料的装置。 提供控制电路以产生应用调谐信号所需的控制信号。 提供输入和输出端口以允许接收输入信号并提供输出信号。 在一些情况下，提供反馈回路以使用输出信号的一部分作为用于在可接受范围内控制装置的操作的诊断信号。 期望根据本发明的原理操作的铁电光子器件对于各种应用（包括光学开关，光学调制，光学计算和光学执行逻辑）将是有用的。