公开(公告)号：US07556892B2

公开(公告)日：2009-07-07

申请号：US11093295

申请日：2005-03-30

申请人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

发明人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  Y10T428/31616

摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

摘要翻译： 在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素 地区。 还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子 硅和多个金属元素，通常为Mo和Zr或Hf。

公开(公告)号：US07340679B2

公开(公告)日：2008-03-04

申请号：US10161071

申请日：2002-05-31

申请人： Martin Botscheck ,  Udo Waibel ,  Mirjam Sonnleithner ,  Monty Gray ,  Wolfram Hepp ,  Martin Zurmuehl ,  Heiko Schultze ,  Mikio Takagi ,  Wolfgang Kuhn ,  Herbert Penzkofer

发明人： Martin Botscheck ,  Udo Waibel ,  Mirjam Sonnleithner ,  Monty Gray ,  Wolfram Hepp ,  Martin Zurmuehl ,  Heiko Schultze ,  Mikio Takagi ,  Wolfgang Kuhn ,  Herbert Penzkofer

IPC分类号： G06F3/00 ,  G06F9/46

CPC分类号： G06Q10/10 ,  G06Q10/06311 ,  Y10S715/963

摘要： A system with user interface controls, a build component, a runtime component, and a workflow engine enables a user to specify an event definition, create an event instance based on the event definition, and process the event instance. The event definition may include a list of tasks corresponding to a life or work event, a specification of resources associated with each task, and a task order. The user may deselect optional tasks, specify participants who are to collaborate in the event, and otherwise personalize the event instance. The user processes the event instance by selecting tasks in accordance with the task order. The system provides access to the resources associated with each task, and allows the user to mark tasks as completed, and to store and monitor the progress of the event instance. Multiple event instances that are created from the same event definition can be processed independently.

摘要翻译： 具有用户界面控件，构建组件，运行时组件和工作流引擎的系统使用户能够指定事件定义，基于事件定义创建事件实例，并处理事件实例。 事件定义可以包括与生命或工作事件相对应的任务的列表，与每个任务相关联的资源的规范以及任务顺序。 用户可以取消选择可选任务，指定要在事件中进行协作的参与者，否则将个性化事件实例。 用户通过根据任务顺序选择任务来处理事件实例。 系统提供对与每个任务相关联的资源的访问，并允许用户将任务标记为已完成，并存储和监视事件实例的进度。 可以单独处理从同一事件定义创建的多个事件实例。

公开(公告)号：US20050130451A1

公开(公告)日：2005-06-16

申请号：US11050738

申请日：2005-02-07

申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H01L21/8242 ,  C23F1/00 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

公开(公告)号：US06686259B2

公开(公告)日：2004-02-03

申请号：US09994507

申请日：2001-11-27

申请人： Sang-sik Park ,  Mikio Takagi ,  Jae-heon Choi ,  Sang-il Jung ,  Jun-taek Lee

发明人： Sang-sik Park ,  Mikio Takagi ,  Jae-heon Choi ,  Sang-il Jung ,  Jun-taek Lee

IPC分类号： H01L21322

CPC分类号： H01L21/3221 ,  H01L27/14601 ,  H01L27/14665

摘要： In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.

摘要翻译： 在制造能够提高吸气效率的固体摄像装置的方法中，提供了可以形成固体摄像装置的正面的半导体衬底和与正面相反的后侧。 随后，在半导体衬底的后侧形成包含具有预定浓度的吸杂杂质的多晶硅层。 接下来，包含用于吸杂的杂质的多晶硅层的预定厚度被氧化，并且用于吸杂的杂质被冷凝成还原的多晶硅层。

公开(公告)号：US6077573A

公开(公告)日：2000-06-20

申请号：US83350

申请日：1998-05-22

申请人： Young-sun Kim ,  Sang-hyeop Lee ,  Seung-hwan Lee ,  Young-wook Park ,  Mikio Takagi

发明人： Young-sun Kim ,  Sang-hyeop Lee ,  Seung-hwan Lee ,  Young-wook Park ,  Mikio Takagi

IPC分类号： H01L27/04 ,  C23C16/24 ,  H01L21/205 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H05H1/24

CPC分类号： C23C16/24

摘要： A method of forming a microelectronic device includes the step of forming an impurity doped amorphous silicon layer on a microelectronic substrate using plasma-enhanced chemical vapor deposition. The impurity doped amorphous silicon layer is patterned so that portions of the microelectronic substrate are exposed adjacent the patterned amorphous silicon layer. A hemispherical grained silicon layer is then formed on the patterned amorphous silicon layer. Moreover, the step of forming the impurity doped amorphous silicon layer can be performed at a temperature of 400.degree. C. or less.

摘要翻译： 形成微电子器件的方法包括使用等离子体增强化学气相沉积在微电子衬底上形成掺杂杂质的非晶硅层的步骤。 图案化杂质掺杂非晶硅层，使得微电子衬底的部分暴露在图案化的非晶硅层附近。 然后在图案化的非晶硅层上形成半球形的硅层。 此外，形成杂质掺杂非晶硅层的步骤可以在400℃以下的温度下进行。

公开(公告)号：US4487787A

公开(公告)日：1984-12-11

申请号：US436294

申请日：1982-10-25

申请人： Yoshimi Shioya ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mikio Takagi

IPC分类号： C23C16/40 ,  C23C16/455 ,  C30B31/02 ,  H01L21/225 ,  H01L21/316

CPC分类号： H01L21/31625 ,  C23C16/401 ,  C23C16/455 ,  C30B29/06 ,  C30B31/02 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/2255

摘要： Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas.

摘要翻译： 使用化学气相沉积工艺沉积在半导体衬底上的PSG中掺杂的杂质浓度取决于同时在一批中用相同设备处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流速。 同时在同一设备中处理的多个半导体衬底中的第一个半导体衬底附近的反应气体的流量的调节对于所加工的所有半导体衬底均匀掺杂PSG中的杂质浓度是有效的 在一批中使用目前可用的真空气相沉积工艺的密封管式设备。 通过监测布置在其入口周围的压力计的读数并且通过诸如氮气的非反应性气体的流量校准的流量调节是可能的。

公开(公告)号：US4293590A

公开(公告)日：1981-10-06

申请号：US192813

申请日：1980-10-01

申请人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

发明人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

公开(公告)号：US4293589A

公开(公告)日：1981-10-06

申请号：US192812

申请日：1980-10-01

申请人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

发明人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

公开(公告)号：US08271882B2

公开(公告)日：2012-09-18

申请号：US10137212

申请日：2002-04-30

申请人： Martin Botscheck ,  Udo Waibel ,  Mirjam Sonnleithner ,  Monty Gray ,  Wolfram Hepp ,  Martin Zurmuehl ,  Heiko Schultze ,  Mikio Takagi ,  Wolfgang Kuhn ,  Herbert Penzkofer

发明人： Martin Botscheck ,  Udo Waibel ,  Mirjam Sonnleithner ,  Monty Gray ,  Wolfram Hepp ,  Martin Zurmuehl ,  Heiko Schultze ,  Mikio Takagi ,  Wolfgang Kuhn ,  Herbert Penzkofer

IPC分类号： G06F3/00 ,  G06F3/048

CPC分类号： G06Q10/10 ,  G06Q10/06311 ,  Y10S715/963

摘要： A method provides a user with access to resources associated with a life or work event by enabling the user to perform certain operations, including specifying a list of one or more tasks corresponding to the event, specifying one or more resources associated with each task, indicating a task order (including an indication of whether two or more tasks in the task list are to be performed in an order-dependent or in an order-independent manner), and formatting the task list into a presentation format. A system with user interface controls enables a user to perform certain operations, including designating an event, generating a list of tasks associated with the event, and specifying an order for performance of the tasks in the task list that may be followed in processing an instance of the event.

摘要翻译： 方法通过使用户能够执行某些操作（包括指定与事件相对应的一个或多个任务的列表）来指定与每个任务相关联的一个或多个资源来向用户提供对与生活或工作事件相关联的资源的访问，指示 任务顺序（包括任务列表中的两个或多个任务是以依次顺序执行还是以独立于顺序的方式进行的指示），并且将任务列表格式化为呈现格式。 具有用户界面控制的系统使得用户能够执行某些操作，包括指定事件，生成与事件相关联的任务列表，以及指定在处理实例时可能遵循的任务列表中的任务的执行顺序 的事件。

公开(公告)号：US20100177954A1

公开(公告)日：2010-07-15

申请号：US12728562

申请日：2010-03-22

申请人： Tohru ANDO ,  Tsutomu Saito ,  Yasuhiko Nara ,  Mikio Takagi ,  Koichi Takauchi

发明人： Tohru ANDO ,  Tsutomu Saito ,  Yasuhiko Nara ,  Mikio Takagi ,  Koichi Takauchi

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06T2200/24 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/2817 ,  Y10S715/964

摘要： A navigation system for easily determining defective positions is provided. In the case of CAD navigation to defective positions, logical information for indicating defective positions is created in a CAD format, instead of CAD data of physical information indicating circuit design. Specifically, by attaching marks such as rectangles, characters, or lines, to an electron microscope image with software, quick navigation is performed with required minimum information. By using created CAD data, re-navigation with the same equipment and CAD navigation to heterogeneous equipment are performed.

摘要翻译： 提供了用于容易地确定缺陷位置的导航系统。 在CAD导航到缺陷位置的情况下，代替用于指示电路设计的物理信息的CAD数据，以CAD格式创建用于指示缺陷位置的逻辑信息。 具体地，通过用软件将诸如矩形，字符或线的标记附加到电子显微镜图像上，使用所需的最小信息进行快速导航。 通过使用创建的CAD数据，执行使用相同设备和CAD导航到异构设备的重新导航。