公开(公告)号：US4275094A

公开(公告)日：1981-06-23

申请号：US955755

申请日：1978-10-30

申请人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

发明人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

摘要翻译： 一种用于硅的高压氧化的方法，包括以下步骤：将硅晶片和氧化物质插入石英胶囊中，通过熔融气密地密封石英胶囊，并加热石英胶囊以在其中产生高压氧化气氛，并形成 硅晶片上的氧化膜，而没有氧化气氛的流动。 在使用水作为氧化物质的情况下，水被冻结，石英胶囊的内部空间在密封操作之前被排出。 此外，在例如氧化气体的情况下， 氧气用作氧化物质，如果气体的压力高于环境压力，则在密封操作之前，将石英胶囊冷却以将气体压力降低到低于环境压力的压力。

公开(公告)号：US4293590A

公开(公告)日：1981-10-06

申请号：US192813

申请日：1980-10-01

申请人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

发明人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

公开(公告)号：US4293589A

公开(公告)日：1981-10-06

申请号：US192812

申请日：1980-10-01

申请人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

发明人： Mikio Takagi ,  Mamoru Maeda ,  Hajime Kamioka

IPC分类号： C30B33/00 ,  H01L21/316

CPC分类号： H01L21/02238 ,  C30B33/005 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for high pressure oxidation of silicon comprising the steps of inserting silicon wafers and an oxidizing substance into a quartz capsule sealing the quartz capsule gas-tightly by fusing, and heating the quartz capsule to generate a high pressure oxidizing atmosphere therein and to form an oxide film on the silicon wafers without a flow of the oxidizing atmosphere. In a case where water is used as the oxidizing substance, the water is frozen and the inside space of the quartz capsule is exhausted before the sealing operation. Furthermore, in a case where an oxidizing gas, e.g. oxygen gas, is used as the oxidizing substance, if the pressure of the gas is higher than the ambient pressure, the quartz capsule is cooled to decrease the gas pressure to a pressure below the ambient pressure before the sealing operation.

公开(公告)号：US4263087A

公开(公告)日：1981-04-21

申请号：US120094

申请日：1980-02-11

申请人： Kaoru Tanabe ,  Yoshifumi Nomura ,  Mamoru Maeda ,  Mikio Takagi

发明人： Kaoru Tanabe ,  Yoshifumi Nomura ,  Mamoru Maeda ,  Mikio Takagi

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  H01L21/205 ,  H01L21/31 ,  C23C13/00

CPC分类号： C30B29/06 ,  C30B25/10 ,  C30B25/12 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.

摘要翻译： 通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层 在所述半导体衬底上。 高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。

公开(公告)号：US4394401A

公开(公告)日：1983-07-19

申请号：US290978

申请日：1981-08-07

申请人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

IPC分类号： C01B33/113 ,  C03C17/02 ,  C03C17/245 ,  C23C16/30 ,  C23C16/40 ,  C23C16/50 ,  C23C16/509 ,  C30B25/02 ,  C30B29/18 ,  H01L21/316

CPC分类号： H01L21/02129 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625

摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

摘要翻译： 公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。 这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。 在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

公开(公告)号：US4625678A

公开(公告)日：1986-12-02

申请号：US740306

申请日：1985-06-03

申请人： Yoshimi Shioya ,  Mamoru Maeda ,  Yasushi Ohyama ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mamoru Maeda ,  Yasushi Ohyama ,  Mikio Takagi

IPC分类号： C23C16/50 ,  C23C16/448 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  H01L21/20 ,  C23C13/08

CPC分类号： H01J37/3244 ,  C23C16/5096

摘要： A plasma CVD apparatus for forming a deposited film on a base body by introducing a gas of a compound into a chamber and converting the gas into plasma by applying a high frequency electric power, includes a gas feeding pipe leading from the exterior of the chamber into the interior of the chamber, and a heating device. The heating device heats at least a part of the gas feeding pipe inside the chamber, thereby preventing the gas from condensing or solidifying. With this apparatus, plasma CVD can stably be carried out using gases of various compounds which are liquid or solid at room temperature.

摘要翻译： 一种等离子体CVD装置，其通过将化合物的气体引入室内并通过施加高频电力将气体转化为等离子体而在基体上形成沉积膜，包括从所述室的外部引出的供气管 室的内部和加热装置。 加热装置加热室内的供气管的至少一部分，从而防止气体冷凝或凝固。 使用这种装置，可以使用在室温下为液体或固体的各种化合物的气体来稳定地进行等离子体CVD。

公开(公告)号：US4513026A

公开(公告)日：1985-04-23

申请号：US518329

申请日：1983-08-01

申请人： Hidekazu Miyamoto ,  Yoshimi Shioya ,  Mamoru Maeda ,  Mikio Takagi

发明人： Hidekazu Miyamoto ,  Yoshimi Shioya ,  Mamoru Maeda ,  Mikio Takagi

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/316

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45578 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/31625

摘要： A semiconductor device having a deposited phosphosilicate glass film, containing an insubstantial amount of hydrogen and a low phosphorus concentration, is manufactured at a high mass productivity. This semiconductor device is manufactured by first placing plural substrates for semiconductor devices to be treated in a reaction tube so that the main surfaces of the substrates are substantially vertically aligned with respect to one another and are substantially perpendicularly intersected by the central axis of the reaction tube, the reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof. Second, a silicon compound gas is introduced through one of the gas feed pipes into the reaction tube and an oxidizing gas is introduced through the other of the gas feed pipes into the reaction tube, while the inside of the reaction tube is maintained a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of the substrates.

摘要翻译： 具有含有非实质量的氢和低磷浓度的沉积磷硅酸盐玻璃膜的半导体器件以高质量生产率被制造。 该半导体器件通过首先在反应管中放置要处理的半导体器件的多个基板，使得基板的主表面相对于彼此大致垂直取向并且基本上垂直于反应管的中心轴线相交 反应管设置有至少两个气体供给管，其具有沿其纵向方向刺穿的多个小开口。 其次，将硅化合物气体通过气体供给管中的一个引入反应管中，并且将氧化气体通过另一个气体供给管引入反应管中，同时反应管的内部保持较低的 压力，由此磷硅玻璃膜沉积在基板的主表面上。

公开(公告)号：US4366506A

公开(公告)日：1982-12-28

申请号：US271239

申请日：1981-06-08

申请人： Koichi Ejiri ,  Morisumi Kurose ,  Mamoru Maeda

发明人： Koichi Ejiri ,  Morisumi Kurose ,  Mamoru Maeda

IPC分类号： H03M7/46 ,  H04N1/41 ,  H04N1/411 ,  H04N7/12

CPC分类号： H04N1/411

摘要： A system for sampling binary value images of white and black and efficiently encoding and decoding them is disclosed. An image is sampled to form a plurality of small picture cells. The small picture cells are merged in groups of four to form a plurality of large picture cells. At least one least frequently occurring density level is determined for the plurality of large picture cells. The least frequently occurring density level is converted to an adjacent density level. The density levels for the picture cells are then encoded and transmitted to a receiver. At the receiving end, the encoded large picture cells are decoded to form a plurality of restored large picture cells. Each restored large picture cell is divided into four small restored picture cells by comparing its density level with that of four neighboring large restored picture cells.

摘要翻译： 公开了一种用于对白和黑二进制值图像进行采样并对其进行有效编码和解码的系统。 对图像进行采样以形成多个小图像单元。 小图像单元以四组合并形成多个大图像单元。 为多个大图像单元确定至少一个最不频繁出现的浓度水平。 最不发生的密度水平被转换为相邻的密度水平。 然后将图像单元的密度级别编码并发送到接收器。 在接收端，编码的大图像单元被解码以形成多个恢复的大图像单元。 将每个恢复的大图像单元通过将其密度水平与四个相邻的大的恢复图像单元的密度水平进行比较而被分为四个小的恢复图像单元

公开(公告)号：US6025603A

公开(公告)日：2000-02-15

申请号：US957737

申请日：1997-10-24

申请人： Yutaka Hasegawa ,  Takeshi Ukai ,  Hideaki Yamagata ,  Kazuhisa Ohtsubo ,  Mamoru Maeda

发明人： Yutaka Hasegawa ,  Takeshi Ukai ,  Hideaki Yamagata ,  Kazuhisa Ohtsubo ,  Mamoru Maeda

IPC分类号： G03G21/04 ,  G07D7/10 ,  G07D7/20 ,  H04N1/00 ,  G06K5/00

CPC分类号： H04N1/00846 ,  G03G21/046 ,  G07D7/10 ,  G07D7/20 ,  H04N1/00864 ,  H04N1/00872

摘要： The present specific document determining apparatus according to the present invention comprises a microwave sensor for irradiating a microwave to and scanning a document, detecting a reflected portion of the irradiated microwave, outputting a first detection signal, again irradiating a microwave and scanning the document after the document is placed on a contact glass, detecting a reflected portion of the irradiated microwave, and outputting a second detection signal; a signal processing section for using the first detection signal as a reference signal and comparing a level of the reference signal to a level of the second detection signal to make determination as to whether metallic fiber is included in the document or not, and a controller for making determination as to whether the document is a specific one or not according to a result of determination by the signal processing section.

摘要翻译： 根据本发明的本具体文件确定装置包括微波传感器，用于向原稿照射微波并扫描原稿，检测被照射的微波的反射部分，输出第一检测信号，再次照射微波并扫描文件 文件放置在接触玻璃上，检测被照射的微波的反射部分，并输出第二检测信号; 信号处理部分，用于使用第一检测信号作为参考信号，并将参考信号的电平与第二检测信号的电平进行比较，以确定金属纤维是否包括在文档中;以及控制器， 根据信号处理部的判断结果，确定文件是否是特定的。

公开(公告)号：US5270224A

公开(公告)日：1993-12-14

申请号：US822232

申请日：1992-01-17

申请人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

发明人： Yuji Furumura ,  Fumitake Mieno ,  Tsutomu Nakazawa ,  Takashi Eshita ,  Mamoru Maeda ,  Tsunenori Yamauchi

IPC分类号： H01L29/08 ,  H01L29/16 ,  H01L29/36 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/7375 ,  H01L29/0817 ,  H01L29/1604 ,  H01L29/36 ,  Y10S148/123 ,  Y10S148/124 ,  Y10S148/155

摘要： A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.

摘要翻译： 双极晶体管包括由掺杂有第一杂质的硅晶体制成的第一电平的基极区域，以便在基极区域中建立第一载流子浓度，并且将由掺杂有第二杂质的硅晶体制成的发射极区域基本上 大于第一电平预定因子，以便在第二杂质超过硅晶体中的第二杂质的溶解度极限的发射极区域中建立第二载流子浓度。 第一和第二电平在这样一个范围内选择，使得发射极区域和基极区域之间的载流子浓度的差异随着基极区域中的杂质水平的增加而显着降低。