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43 条记录 (耗时 0.024 秒)

    Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
    25.
    发明授权
    Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement 有权
    垂直腔表面发射激光器利用反向偏置二极管来改善电流限制

    公开(公告)号：US06680963B2

    公开(公告)日：2004-01-20

    申请号：US09912801

    申请日：2001-07-24

    申请人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    发明人： Andrew Shuh-Huei Liao ,  Ghulam Hasnain ,  Chihping Kuo ,  Hao-Chung Kuo ,  Zhiqing Shi ,  Minh Ngoc Trieu

    IPC分类号： H01S5183

    CPC分类号： H01S5/18308 ,  H01S5/18358 ,  H01S5/2059

    摘要： A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.

    摘要翻译： 可用于构造发光器件的电流限制元件。 电流限制元件包括顶层和孔限定层。 顶层包括对光透明的第一导电类型的顶部半导体材料。 孔径限定层包括孔区域和限制区域。 开口区域包括对光透明的第一导电类型的孔径半导体材料。 限制区域围绕开口区域并且包括被掺杂以提供对电流流动的高电阻的材料。 在本发明的一个实施例中，限制区域包括第二导电类型的半导体材料。

    Light emitting device with graded composition hole tunneling layer
    27.
    发明授权
    Light emitting device with graded composition hole tunneling layer 有权
    发光器件具有梯度组成孔隧道层

    公开(公告)号：US08829652B2

    公开(公告)日：2014-09-09

    申请号：US13551068

    申请日：2012-07-17

    申请人： Chao-Hsun Wang ,  Hao-Chung Kuo

    发明人： Chao-Hsun Wang ,  Hao-Chung Kuo

    IPC分类号： H01L33/00 ,  H01L29/06

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/34333

    摘要： A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.

    摘要翻译： 提供了一种具有梯度组成的空穴隧道层的发光器件。 该器件包括衬底，n型半导体层设置在衬底上，其中n型半导体层包括第一部分和第二部分。 在n型半导体层的第一部分上设置有梯度组成的空穴隧穿层。 电子阻挡层设置在梯度组合物空穴隧穿层上。 p型半导体层设置在电子阻挡层上。 第一电极设置在p型半导体层上，第二电极设置在n型半导体层的第二部分上并与n型半导体的第一部分电绝缘。 梯度组成空穴隧道层用作量子阱以提高孔的传输效率，以增加发光器件的发光效率。

    Solar cell apparatus having the transparent conducting layer with the structure as a plurality of nano-level well-arranged arrays
    29.
    发明申请
    Solar cell apparatus having the transparent conducting layer with the structure as a plurality of nano-level well-arranged arrays 审中-公开
    具有透明导电层的太阳能电池装置，其结构为多个纳米级排列好的阵列

    公开(公告)号：US20120073641A1

    公开(公告)日：2012-03-29

    申请号：US12929218

    申请日：2011-01-10

    申请人： Ping-Chen Tseng ,  Peichen Yu ,  Hao-Chung Kuo

    发明人： Ping-Chen Tseng ,  Peichen Yu ,  Hao-Chung Kuo

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/022466 ,  H01L31/0392 ,  H01L31/1884 ,  Y02E10/50

    摘要： The invention discloses an apparatus for enhancing light absorption of solar cells and photodetectors by diffraction. The invention comprises the structure as the plurality of nano-level well-arranged arrays with a plurality of certain defect areas including the shapes of rod, tapered-cone, and cone, which diffracts incident light to oblique angles for light trapping. Surface reflection can also be reduced for either broadband or narrow band spectral absorption. The increased contact area between the transparent conducting layer and photoactive layer is beneficial for current extraction, which increases the internal quantum efficiency (IQE).

    摘要翻译： 本发明公开了一种通过衍射来增强太阳能电池和光电检测器的光吸收的装置。 本发明包括具有多个具有多个特定缺陷区域的纳米级布置阵列的结构，其中包括棒状，锥形锥形和锥形的形状，其将入射光衍射成倾斜角度用于光捕获。 宽带或窄带光谱吸收也可以减少表面反射。 透明导电层和光敏层之间的增加的接触面积有利于电流提取，这增加了内部量子效率（IQE）。

    Surface-emitting laser device
    30.
    发明授权
    Surface-emitting laser device 有权
    表面发射激光器件

    公开(公告)号：US07974324B2

    公开(公告)日：2011-07-05

    申请号：US12708665

    申请日：2010-02-19

    申请人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    发明人： Shih-Wei Chen ,  Tien-Chang Lu ,  Hao-Chung Kuo ,  Shing-Chung Wang

    IPC分类号： H01S5/00

    CPC分类号： H01S5/187 ,  B82Y20/00 ,  H01S5/105 ,  H01S5/34313

    摘要： A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.

    摘要翻译： 表面发射激光器件包括：衬底; 具有折射率nL的低折射率层并且设置在基板上; 具有折射率nH的发光层状结构，其中nH> nL，发光层状结构形成在低折射率层上并具有第一和第二半导体层以及多量子阱（MQW），其设置在第一和第二半导体层之间 第二半导体层并且能够产生具有波长λ0的光子; 以及在发光层状结构中形成并具有以晶格常数a布置成周期性图案的光学纳米结构的二维光子晶体（2DPC）。 纳米结构从第一半导体层延伸通过MQW。 2DPC具有归一化频率，其被定义为a /λ0，范围从0.25到0.70。