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    Semiconductor light emitting device and its manufacturing method
    21.
    发明申请
    Semiconductor light emitting device and its manufacturing method 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20050040409A1

    公开(公告)日：2005-02-24

    申请号：US10932697

    申请日：2004-09-02

    申请人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

    发明人： Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

    IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L29/06

    CPC分类号： B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/04 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/3216 ,  H01S5/34333

    摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

    摘要翻译： 在使用氮化物III-V族化合物半导体的半导体激光器等半导体发光装置中，在n侧包覆层和p侧覆层之间具有活性层的结构，p侧包覆层由 未掺杂或n型第一层9和p型第二层12，其从有源层更接近地远离沉积。 第一层9不比50nm薄。 p型第二层12包括其中插入较大带隙的p型第三层作为电子阻挡层。 因此，为了确保良好的光学性能，半导体发光器件的操作电压降低，同时保持p侧覆层的厚度。

    Method of manufacturing semiconductor device
    24.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06991952B2

    公开(公告)日：2006-01-31

    申请号：US10613624

    申请日：2003-07-03

    申请人： Takashi Mizuno ,  Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

    发明人： Takashi Mizuno ,  Motonobu Takeya ,  Takeharu Asano ,  Masao Ikeda

    IPC分类号： H01L21/00

    CPC分类号： H01S5/0224 ,  H01S5/0021 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/02272 ,  H01S5/32341

    摘要： Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.

    摘要翻译： 提供一种制造半导体器件的方法，其适于防止材料沉积在激光发射边缘上，从而能够提高激光器的寿命特性。 用具有比激光芯片的振荡波长短的波长的能量束照射安装有激光芯片的基座。 由能量束引起的光解和氧化导致从整个基底中去除附着物或其劣化，附带地，粘合剂衍生自用于将激光芯片附着到基底的粘合片等。 优选地，例如使用激光或紫外线作为能量束。 或者，可以用等离子体照射安装有激光芯片的基座，以便利用等离子体的离子清洁效果去除粘附剂。 照射后，将顶部安装在基座上，以从外部切断激光芯片。

    Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
    27.
    发明授权
    Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device 有权
    氮化物III-V族化合物半导体的生长方法，半导体装置的制造方法以及半导体装置

    公开(公告)号：US06682991B1

    公开(公告)日：2004-01-27

    申请号：US09448584

    申请日：1999-11-24

    申请人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

    发明人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

    IPC分类号： H01L2120

    CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0332 ,  H01S5/2077 ,  H01S5/32341

    摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

    摘要翻译： 当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。 生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合 ，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。 氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或 例如Pt膜。

    Laser diode
    29.
    发明授权
    Laser diode 失效
    激光二极管

    公开(公告)号：US07672349B2

    公开(公告)日：2010-03-02

    申请号：US11462726

    申请日：2006-08-07

    申请人： Keiji Sato ,  Ryuichiro Hayashi ,  Kenji Oikawa ,  Takeharu Asano

    发明人： Keiji Sato ,  Ryuichiro Hayashi ,  Kenji Oikawa ,  Takeharu Asano

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4025 ,  H01L2224/48247 ,  H01L2224/4917 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/405 ,  H01S5/4087

    摘要： A laser diode which can be easily assembled at low material cost is provided. A first light emitting device having a laser structure on a substrate, a second light emitting device having laser structures on a substrate, and a support base are provided. The first light emitting device and the second light emitting device are layered in this order on the support base in a manner that the respective laser structures of the first light emitting device and the second light emitting device are opposed to each other. A substrate side of the first light emitting device and a laser structure side of the second light emitting device are electrically connected to the support base.

    摘要翻译： 提供了可以以低成本容易地组装的激光二极管。 提供了在基板上具有激光结构的第一发光器件，在衬底上具有激光结构的第二发光器件和支撑基座。 第一发光器件和第二发光器件按照第一发光器件和第二发光器件的相应激光器结构彼此相对的方式依次层叠在支撑基座上。 第一发光器件的衬底侧和第二发光器件的激光器结构侧电连接到支撑基座。

    Laser diode and laser diode device
    30.
    发明申请
    Laser diode and laser diode device 审中-公开
    激光二极管和激光二极管器件

    公开(公告)号：US20070064758A1

    公开(公告)日：2007-03-22

    申请号：US11521429

    申请日：2006-09-15

    申请人： Masaru Kuramoto ,  Takeharu Asano

    发明人： Masaru Kuramoto ,  Takeharu Asano

    IPC分类号： H01S5/00

    CPC分类号： H01S5/024 ,  B82Y20/00 ,  H01L2224/48463 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/2214 ,  H01S5/34333

    摘要： A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is abosorbed in the saturable absorption region to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, and an interaction between the saturable absorption region and the gain region is intitiated, thereby self-oscillation can be produced.

    摘要翻译： 提供能够容易地安装的激光二极管，以及安装有激光二极管的激光二极管装置。 在半导体层中设置有空穴，p型电极和n型半导体层通过孔的底部（连接部）彼此电连接。 因此，p型电极具有与n型半导体层相同的电位，并且在对应于电流路径的区域中形成可饱和吸收区域。 在增益区域（未示出）中产生的光在可饱和吸收区域中被吸收以被转换为电流。 电流通过p侧电极和底部放电到地，并且可饱和吸收区域和增益区域之间的相互作用被抑制，从而可以产生自振荡。