公开(公告)号：US20230081675A1

公开(公告)日：2023-03-16

申请号：US17447018

申请日：2021-09-07

Applicant: NXP B.V.

Inventor： Ljubo Radic ,  Viet Thanh Dinh ,  Petrus Hubertus Cornelis Magnee

IPC: H01L29/10 ,  H01L29/737 ,  H01L29/08

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region. A defect layer having an upper surface formed in an upper portion of the first doped region. A second semiconductor region of a second semiconductor type is formed over the first semiconductor region.

公开(公告)号：US09570546B2

公开(公告)日：2017-02-14

申请号：US14852385

申请日：2015-09-11

Applicant: NXP B.V.

Inventor： Tony Vanhoucke ,  Viet Thanh Dinh ,  Petrus Hubertus Cornelis Magnee ,  Ponky Ivo ,  Dirk Klaassen ,  Mahmoud Shehab Mohammad Al-Sa'di

IPC: H01L29/06 ,  H01L29/66 ,  H03F3/21 ,  H01L29/417 ,  H01L21/324 ,  H01L29/735 ,  H01L29/08 ,  H01L29/36 ,  H01L29/737

CPC classification number: H01L29/063 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7378 ,  H03F3/21

Abstract: A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.

Abstract translation: 一种包括双极晶体管的半导体器件及其制造方法。 一种功率放大器，包括双极晶体管。 双极晶体管包括具有横向延伸漂移区的集电极。 还包括位于收集器上方的基座。 双极晶体管还包括位于基极上方的发射极。 双极晶体管还包括具有不同于集电极的导电类型的掺杂区域。 掺杂区域在集电极下方横向延伸以在掺杂区域和集电极之间的接触区域处形成结。 掺杂区域具有非均匀的横向掺杂分布。 在最接近双极晶体管的集电极 - 基极结的掺杂区域的一部分中，掺杂区域的掺杂水平最高。

公开(公告)号：US09515644B2

公开(公告)日：2016-12-06

申请号：US14286418

申请日：2014-05-23

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Antonius Maria Hurxk ,  Tony Vanhoucke ,  Jan Willem Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: H03F1/34 ,  H03K17/10 ,  H01L29/40 ,  H01L29/732 ,  H01L29/165 ,  H01L29/737 ,  H03F3/19 ,  H03F3/21 ,  G05F1/46

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。

公开(公告)号：US09240468B2

公开(公告)日：2016-01-19

申请号：US14223296

申请日：2014-03-24

Applicant: NXP B.V.

Inventor： Tony Vanhoucke ,  Viet Thanh Dinh ,  Anco Heringa ,  Dirk Klaassen ,  Evelyne Gridelet ,  Jan Willem Slotboom

IPC: H01L29/15 ,  H01L31/0256 ,  H01L29/737 ,  H01L29/40 ,  H01L29/66 ,  H01L29/732 ,  H01L29/08 ,  H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/205

CPC classification number: H01L29/737 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66242 ,  H01L29/6628 ,  H01L29/7327 ,  H01L29/739

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.

Abstract translation: 半导体器件及其制造方法。 该器件包括半导体衬底。 该器件还包括半导体衬底上的双极晶体管。 双极晶体管包括发射极。 双极晶体管还包括位于发射极之上的基极。 双极晶体管还包括位于基极上方的横向延伸的收集器。 收集器包括延伸经过基座边缘的部分。

公开(公告)号：US20140347135A1

公开(公告)日：2014-11-27

申请号：US14284509

申请日：2014-05-22

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Adrianus Maria Hurxk ,  Tony Vanhoucke ,  Jan Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: H03K17/10 ,  H03F3/21 ,  H03F3/19 ,  H01L29/737 ,  H01L29/165

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics.

Abstract translation: 本发明提供了一种双极晶体管电路和双极晶体管的控制方法，其中双极晶体管具有用于控制晶体管的集电极区域中的电场的栅极端子。 施加到栅极端子的偏置电压被控制以实现不同的晶体管特性。

公开(公告)号：US20140347131A1

公开(公告)日：2014-11-27

申请号：US14286418

申请日：2014-05-23

Applicant: NXP B.V.

Inventor： Viet Thanh Dinh ,  Godefridus Antonius Maria Hurxk ,  Tony Vanhoucke ,  Jan Willem Slotboom ,  Anco Heringa ,  Ivan Zahariev ,  Evelyne Gridelet

IPC: G05F1/46 ,  H03F3/21

CPC classification number: H03K17/10 ,  G05F1/462 ,  H01L29/165 ,  H01L29/402 ,  H01L29/7327 ,  H01L29/737 ,  H03F1/34 ,  H03F3/19 ,  H03F3/21 ,  H03F2200/153

Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。