公开(公告)号：US20180019268A1

公开(公告)日：2018-01-18

申请号：US15213082

申请日：2016-07-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/0232

CPC classification number: H01L27/1443 ,  G01J2001/442 ,  H01L27/14603 ,  H01L27/1464 ,  H01L31/02027 ,  H01L31/02327 ,  H01L31/107

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

公开(公告)号：US09799699B2

公开(公告)日：2017-10-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

公开(公告)号：US09224881B2

公开(公告)日：2015-12-29

申请号：US13856993

申请日：2013-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L21/02 ,  H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20150318327A1

公开(公告)日：2015-11-05

申请号：US14270309

申请日：2014-05-05

Applicant: OmniVision Technologies, Inc.

Inventor： Wei Zheng ,  Dyson Hsin-Chih Tai ,  Vincent Venezia

IPC: H01L27/146 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/762 ,  H01L21/76224 ,  H01L21/76829 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.

Abstract translation: 一种用于制造背面照明彩色图像传感器的方法包括：（a）修改具有像素阵列的图像传感器晶片的前侧以产生与像素阵列的电连接，其中电连接从图像传感器晶片向深度方向延伸到图像传感器晶片中 （b）修改图像传感器晶片的背面以暴露电连接。

公开(公告)号：US20140319639A1

公开(公告)日：2014-10-30

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20140312447A1

公开(公告)日：2014-10-23

申请号：US14319807

申请日：2014-06-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dyson H. Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element.

Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。

公开(公告)号：US08759934B2

公开(公告)日：2014-06-24

申请号：US13649953

申请日：2012-10-11

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US08729712B2

公开(公告)日：2014-05-20

申请号：US14052944

申请日：2013-10-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson H. Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L21/00

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US20130032921A1

公开(公告)日：2013-02-07

申请号：US13649953

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US12273639B2

公开(公告)日：2025-04-08

申请号：US17893689

申请日：2022-08-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Young Woo Jung ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Zhiqiang Lin ,  Sang Joo Lee

IPC: H04N25/704 ,  H04N23/67 ,  H04N25/709 ,  H10F39/00 ,  H10F39/18

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.