公开(公告)号：US10893588B2

公开(公告)日：2021-01-12

申请号：US16484232

申请日：2018-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Schulten ,  Michael Schumann ,  Dominik Scholz

IPC: H05B45/20 ,  G09G5/02 ,  G03B15/02 ,  H05B45/24

Abstract: A method of operating a lighting device with a light-emitting component, in which the light-emitting component includes a plurality of pixels configured to illuminate a plurality of zones in a field of view, the light-emitting component includes a processing device including characterization data of the light-emitting component, and the pixels of the light-emitting component are operated as a function of the characterization data, wherein to determine characterization data prior to intended operation of the lighting device an intensity and/or a color location of the emitted light of a pixel or of each pixel is measured as a function of an operating current.

公开(公告)号：US10516079B2

公开(公告)日：2019-12-24

申请号：US16006765

申请日：2018-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L33/00 ,  H01L33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L25/16 ,  H01L31/12

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and the first contact layer (41) and the second contact layer (42) run parallel to each other.

公开(公告)号：US10381521B2

公开(公告)日：2019-08-13

申请号：US16069129

申请日：2017-01-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel ,  Dominik Scholz

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/20 ,  H01L33/62

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence.

公开(公告)号：US10374121B2

公开(公告)日：2019-08-06

申请号：US15774960

申请日：2016-11-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, a component includes a semiconductor layer sequence including a first main side, a first layer, an active layer, a second layer and a second main side, a first contact element arranged on the second main side filling a recess in the semiconductor layer sequence, wherein the recess extends from the second main side through the second layer and the active layer and opens out into the first layer and a second contact element arranged on the second main side, the second contact element being arranged laterally next to the recess in a plan view of the second main side, wherein the first contact element comprises a first transparent intermediate layer, a metallic first mirror layer and a metallic injection element.

公开(公告)号：US10256602B2

公开(公告)日：2019-04-09

申请号：US15516964

申请日：2015-10-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz

IPC: H01S5/00 ,  H01S5/022 ,  H01S5/024

Abstract: A laser component has a housing, which includes a carrier having a cavity with a bottom surface and a sidewall, wherein the cavity widens starting from the bottom surface, the side wall is inclined relative to the bottom surface by an angle different from 45°, a laser chip, an emission direction of which is oriented parallel to the bottom surface, is arranged on the bottom surface in the cavity, a reflective element is arranged in the cavity and bears on an edge between the bottom surface and the side wall, a reflective surface of the reflective element defines an angle with the bottom surface of the cavity, and the emission direction defines an angle of 45° with the reflective surface of the reflective element.

公开(公告)号：US20190013434A1

公开(公告)日：2019-01-10

申请号：US15775817

申请日：2017-02-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer ,  Isabel Otto

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

Abstract: A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer.

公开(公告)号：US20170040500A1

公开(公告)日：2017-02-09

申请号：US15100062

申请日：2015-01-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Brittaö Göötz ,  Ion Stoll ,  Alexander F. Pfeuffer ,  Dominik Scholz ,  lsabel Otto

IPC: H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  C23F1/14 ,  C23F1/02

CPC classification number: H01L33/502 ,  C23C28/00 ,  C23C28/32 ,  C23C28/345 ,  C23F1/02 ,  C23F1/14 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L33/504 ,  H01L2933/0041

Abstract: A method for producing a laterally structured phosphor layer and an optoelectronic component comprising such a phosphor layer are disclosed. In an embodiment the method includes providing a carrier having a first electrically conductive layer at a carrier top side, applying an insulation layer to the first electrically conductive layer and a second electrically conductive layer to the insulation layer, etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is maintained as a continuous layer. The method further includes applying a voltage to the first electrically conductive layer and electrophoretically coating the first electrically conductive layer with a first material, and applying a voltage to the second electrically conductive layer and electrophoretically coating the second electrically conductive layer with a second material.

Abstract translation: 公开了一种用于制造横向结构的荧光体层的方法和包含这种磷光体层的光电子部件。 在一个实施例中，该方法包括提供在载体顶侧具有第一导电层的载体，向第一导电层施加绝缘层，向绝缘层施加第二导电层，蚀刻第二导电层和 绝缘层，其中第一导电层保持为连续层。 该方法还包括向第一导电层施加电压并用第一材料电泳涂覆第一导电层，以及向第二导电层施加电压并用第二材料电泳涂覆第二导电层。

公开(公告)号：US11164850B2

公开(公告)日：2021-11-02

申请号：US16622669

申请日：2018-06-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Siegfried Herrmann

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

Abstract: An arrangement having a plurality of lighting modules and a method for producing an arrangement having a plurality of lighting modules are disclosed. In an embodiment an arrangement includes a plurality of lighting modules held by a carrier, each lighting module having a plurality of optoelectronic components arranged in a first number of rows and a second number of columns, wherein the lighting modules include a respective first number of first electrodes and a respective second number of second electrodes, wherein the optoelectronic components of a respective row of the rows are electrically connected to one of the first electrodes of the respective lighting module, wherein the optoelectronic components of a respective column of the columns are electrically connected to one of the second electrodes of the respective lighting module, and wherein the carrier includes one third electrode per row and one fourth electrode per column, the electrodes being electrically contactable in each case from outside the carrier.

公开(公告)号：US11133250B2

公开(公告)日：2021-09-28

申请号：US16615839

申请日：2018-05-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Dominik Scholz ,  Christian Leirer

IPC: H01L23/528 ,  H01L23/532

Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.

公开(公告)号：US11081620B2

公开(公告)日：2021-08-03

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.