公开(公告)号：US09947838B2

公开(公告)日：2018-04-17

申请号：US15297336

申请日：2016-10-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Martin Mandl

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/58

CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

公开(公告)号：US09691815B2

公开(公告)日：2017-06-27

申请号：US14434760

申请日：2013-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Koelper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/24 ,  H01L25/075 ,  H01L33/18 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

公开(公告)号：US20150207043A1

公开(公告)日：2015-07-23

申请号：US14414744

申请日：2013-07-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Martin Mandl

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

Abstract translation: 一种方法产生多色LED显示器，该显示器包括具有多个像素的LED发光单元。 第一子像素，第二子像素和第三子像素包含发射第一颜色的辐射的LED芯片，其中将辐射转换成第二颜色的第一转换层布置在第二子像素的至少上方，以及转换辐射的第二转换层 在第三子像素的上方配置第三颜色。 执行至少一个处理步骤，其中在像素上方的至少一个限定区域中施加或去除第一或第二转换层，其中一部分LED芯片是电操作的，并且其中该区域由辐射 由所操作的LED芯片产生的热量或产生的电场。

公开(公告)号：US20140339577A1

公开(公告)日：2014-11-20

申请号：US14362155

申请日：2012-11-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/44 ,  H01L33/60 ,  H01L27/15

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

Abstract translation: 光电子半导体芯片包括彼此间隔设置的多个有源区和布置在多个有源区的下侧的反射层，其中至少一个有源区具有主延伸方向， 所述有源区具有形成有第一半导体材料的芯区，所述有源区具有有源层，至少在相对于所述有源区的主延伸方向横向的方向上覆盖所述芯区，所述有源区具有覆盖层 形成有第二半导体材料，并且至少在相对于有源区的主延伸方向横向的方向上覆盖有源层，并且反射层反射在有源层中操作期间产生的电磁辐射。