公开(公告)号：US20220262999A1

公开(公告)日：2022-08-18

申请号：US17603602

申请日：2020-04-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian PERZLMAIER ,  Tobias MEYER

IPC: H01L33/62 ,  H01L33/24 ,  H01L33/38

Abstract: An optoelectronic semiconductor component may include a semiconductor body having a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, as well as a first surface and a second surface different from the first surface. The component may further include a first contact structure for electrically contacting the first semiconductor region and a second contact structure for electrically contacting the second semiconductor region. The first and second contact structures may each have a first connection region arranged on the first surface and a second connection region arranged on the second surface for electrically contacting the semiconductor component from the outside. The first and second connection regions of the first contact structure and the first and second connection regions of the second contact structure may each be designed to be rotationally symmetrical with respect to an axis of symmetry.

公开(公告)号：US20220262852A1

公开(公告)日：2022-08-18

申请号：US17734035

申请日：2022-04-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Andreas BIEBERSDORF ,  Ruth BOSS ,  Erwin LANG ,  Tobias MEYER ,  Alexander PFEUFFER ,  Marc PHILIPPENS ,  Julia STOLZ ,  Tansen VARGHESE ,  Sebastian WITTMANN ,  Siegfried HERRMANN ,  Berthold HAHN ,  Bruno JENTZSCH ,  Korbinian PERZLMAIER ,  Peter STAUSS ,  Petrus SUNDGREN ,  Jens MUELLER ,  Kerstin NEVELING ,  Frank SINGER ,  Christian MUELLER

IPC: H01L27/15 ,  H01L33/58 ,  H01L33/10

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220262851A1

公开(公告)日：2022-08-18

申请号：US17734034

申请日：2022-04-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER ,  Andreas BIEBERSDORF ,  Ruth BOSS ,  Erwin LANG ,  Tobias MEYER ,  Alexander PFEUFFER ,  Marc PHILIPPENS ,  Julia STOLZ ,  Tansen VARGHESE ,  Sebastian WITTMANN ,  Siegfried HERRMANN ,  Berthold HAHN ,  Bruno JENTZSCH ,  Korbinian PERZLMAIER ,  Peter STAUSS ,  Petrus SUNDGREN ,  Jens MUELLER ,  Kerstin NEVELING ,  Frank SINGER ,  Christian MUELLER

IPC: H01L27/15 ,  H01L33/58 ,  H01L33/10

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220102583A1

公开(公告)日：2022-03-31

申请号：US17426456

申请日：2020-01-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten BAUMHEINRICH ,  Martin BEHRINGER ,  Andreas BIEBERSDORF ,  Ruth BOSS ,  Michael BRANDL ,  Peter BRICK ,  Jean-Jacques DROLET ,  Hubert HALBRITTER ,  Laura KREINER ,  Erwin LANG ,  Andreas LEBER ,  Tobias MEYER ,  Alexander PFEUFFER ,  Marc PHILIPPENS ,  Jens RICHTER ,  Thomas SCHWARZ ,  Paul TA ,  Tansen VARGHESE ,  Xue WANG ,  Sebastian WITTMANN ,  Julia STOLZ ,  Karsten DIEKMANN ,  Karl ENGL ,  Siegfried HERRMANN ,  Berthold HAHN ,  Stefan ILLEK ,  Bruno JENTZSCH ,  Korbinian PERZLMAIER ,  Ines PIETZONKA ,  Andreas RAUSCH ,  Kilian REGAU ,  Tilman RUEGHEIMER ,  Simon SCHWALENBERG ,  Christopher SOELL ,  Peter STAUSS ,  Petrus SUNDGREN ,  Hoa VU ,  Christopher WIESMANN ,  Georg BOGNER ,  Patrick HOERNER ,  Christoph KLEMP ,  Jens MUELLER ,  Kerstin NEVELING ,  Jong PARK ,  Christine RAFAEL ,  Frank SINGER ,  Kanishk CHAND ,  Felix FEIX ,  Christian MUELLER ,  Eva-Maria RUMMEL ,  Nicole HEITZER ,  Marie ASSMANN ,  Christian BERGER ,  Ana KANEVCE

IPC: H01L33/38 ,  H01L27/15 ,  H01L25/075 ,  H01L21/683 ,  H01L33/06 ,  H01L33/18 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  G09G3/32

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20180212108A1

公开(公告)日：2018-07-26

申请号：US15743606

申请日：2016-07-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian LEIRER ,  Korbinian PERZLMAIER

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/40 ,  H01L31/0224 ,  H01L31/0232 ,  H01L27/146

CPC classification number: H01L33/382 ,  H01L27/146 ,  H01L27/15 ,  H01L31/0224 ,  H01L31/02327 ,  H01L33/08 ,  H01L33/36 ,  H01L33/405

Abstract: An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically conductively connected to one another by means of the first contact plane (51) and are electrically contactable by means of the first contact location (52).

公开(公告)号：US20180190711A1

公开(公告)日：2018-07-05

申请号：US15739102

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian PERZLMAIER ,  Lutz HOEPPEL

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L29/872

CPC classification number: H01L27/15 ,  H01L29/1604 ,  H01L29/247 ,  H01L29/872 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). Furthermore, a first contact layer (5a) is provided which extends laterally along the first semiconductor layer (3a) and electrically contacts same. A third semiconductor layer (7) is applied onto a first contact layer (5a) face facing away from the semiconductor layer sequence (3). A recess (8) is formed which extends through the third semiconductor layer (7), the first contact layer (5a), and the first semiconductor layer (3a) into the second semiconductor layer (3b). A passivation layer (9) is applied onto a third semiconductor layer (7) face facing away from the the semiconductor layer sequence (3). At least one first (9a) and at least one second passage opening (9b, 9c) are formed in the passivation layer (9). A second contact layer (5b) is applied which electrically contacts the second semiconductor layer (3b) in the region of the at least one first passage opening (9a) and the third semiconductor layer (7) in the region of the at least one second passage opening (9b, 9c). The invention additionally relates to an optoelectronic semiconductor chip (1).