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111 条记录 (耗时 0.06 秒)

    Mouse MTS2 gene
    21.
    发明授权
    Mouse MTS2 gene 有权
    小鼠MTS2基因

    公开(公告)号：US06210949B1

    公开(公告)日：2001-04-03

    申请号：US09201139

    申请日：1998-11-30

    申请人： Steven Stone ,  Ping Jiang ,  Alexander Kamb

    发明人： Steven Stone ,  Ping Jiang ,  Alexander Kamb

    IPC分类号： C07H2104

    CPC分类号： C12Q1/6886 ,  C12Q2600/136 ,  C12Q2600/156 ,  C12Q2600/172

    摘要： The present invention relates to the Multiple Tumor Suppressor (MTS) genes in mice, their expression products, and their homology to the human MTS genes. The human MTS genes are involved in human cancers. The invention is further related to the use of the MTS genes in the therapy, diagnosis and prognosis of human cancer. The invention further relates to mutations in the MTS gene and their use in the diagnosis of predisposition to melanoma, leukemia, astrocytoma, glioblastoma, lymphoma, glioma, Hodgkin's lymphoma, CLL, and cancers of the pancreas, breast, thyroid, ovary, uterus, testis, kidney, stomach and rectum. The invention also relates to the therapy of human cancers which have a mutation in the MTS gene, including gene therapy, protein replacement therapy and protein mimetics. Finally, the invention relates to the screening of drugs for cancer therapy.

    摘要翻译： 本发明涉及小鼠中的多重肿瘤抑制因子（MTS）基因，其表达产物及其与人MTS基因的同源性。 人类MTS基因涉及人类癌症。 本发明进一步涉及MTS基因在人类癌症的治疗，诊断和预后中的应用。 本发明还涉及MTS基因中的突变及其在诊断黑色素瘤，白血病，星形细胞瘤，成胶质细胞瘤，淋巴瘤，神经胶质瘤，霍奇金淋巴瘤，CLL和胰腺，乳腺，甲状腺，卵巢，子宫， 睾丸，肾，胃和直肠。 本发明还涉及在MTS基因中具有突变的人类癌症的治疗，包括基因治疗，蛋白质替代疗法和蛋白质模拟物。 最后，本发明涉及用于癌症治疗的药物的筛选。

    Method for ligating adaptors to nucleic acids which methods are useful for obtaining the ends of genes
    22.
    发明授权
    Method for ligating adaptors to nucleic acids which methods are useful for obtaining the ends of genes 失效
    将衔接子与核酸连接的方法，该方法可用于获得基因的末端

    公开(公告)号：US5789206A

    公开(公告)日：1998-08-04

    申请号：US499787

    申请日：1995-07-07

    申请人： Sean V. Tavtigian ,  Steven Stone ,  Ping Jiang ,  Alexander Kamb

    发明人： Sean V. Tavtigian ,  Steven Stone ,  Ping Jiang ,  Alexander Kamb

    IPC分类号： C12Q1/68 ,  C12P19/34

    CPC分类号： C12Q1/6853

    摘要： The present invention is directed to cloning the ends of genes. Traditionally it has been very difficult to recover the 5' end of a gene. The present invention greatly eases this problem. The invention is a variation on RACE and uses a combination of techniques. Specific genes are purified by using three enrichment steps--1) a polymerase chain reaction, 2) a hybrid capture step, and 3) a second polymerase chain reaction. The inclusion of the hybrid capture step results in a greater enrichment than occurs with RACE. The ends of the gene are retained by use of a novel technique of attaching adaptors at the ends of the nucleic. The 5' end of the gene is conserved by preparing a first strand of cDNA and ligating to this an adaptor which is partially double stranded wherein the overhang or single stranded region of the adaptor is degenerate which allows for a fraction of the adaptor population to hybridize with the first strand of cDNA at the 3' end of the cDNA. This hybridization holds the adaptor in conjunction with the cDNA during the ligation step thereby resulting in a highly efficient ligation. The unique portion of the adaptor is used to design an oligomer to prime the second strand synthesis. None of the 5' sequence is lost in this method thereby allowing for a greater possibility of recovering the extreme 5' end of the gene.

    摘要翻译： 本发明涉及克隆基因的末端。 传统上，恢复基因的5'末端是非常困难的。 本发明大大减轻了这个问题。 本发明是RACE的变体，并且使用技术的组合。 通过使用三个富集步骤-1）聚合酶链反应，2）杂交捕获步骤和3）第二聚合酶链反应来纯化特异性基因。 包含杂交捕获步骤导致比RACE发生的更大的富集。 通过使用在核酸末端连接衔接子的新技术来保留基因的末端。 基因的5'末端通过制备第一条cDNA链并连接到该部分双链的衔接子来保守，其中衔接子的突出端或单链区域是简并的，其允许一部分衔接子群体杂交 cDNA的第一条cDNA在cDNA的3'末端。 该杂交在连接步骤期间使衔接子与cDNA结合，从而导致高效连接。 适配器的独特部分用于设计低聚物以引发第二链合成。 在该方法中没有一个5'序列丢失，从而允许更大的恢复基因的极端5'末端的可能性。

    Modified hyaluronidases and uses in treating hyaluronan-associated diseases and conditions
    23.
    发明授权
    Modified hyaluronidases and uses in treating hyaluronan-associated diseases and conditions 有权

    公开(公告)号：US10328130B2

    公开(公告)日：2019-06-25

    申请号：US13385528

    申请日：2012-02-22

    申请人： Gregory I. Frost ,  Ping Jiang ,  Curtis B. Thompson

    发明人： Gregory I. Frost ,  Ping Jiang ,  Curtis B. Thompson

    IPC分类号： C12N9/26 ,  A61K38/47 ,  C12N11/08 ,  A61K31/337

    摘要： Provided are combinations, compositions and kits containing a hyaluronan degrading enzyme, such as a soluble hyaluronidase, for treatment of hyaluronan-associated conditions, diseases and disorders. In one example, the products include an additional agent or treatment. Such products can be used in methods for administering the products to treat the hyaluronan-associated diseases and conditions, for example, hyaluronan-associated cancers, for example, hyaluronan-rich tumors. The methods include administration of the hyaluronan degrading enzyme composition alone or in combination with other treatments. Also provided are methods and compositions for providing sustained treatment effects in hyaluronan-associated diseases and conditions.

    Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
    27.
    发明授权
    Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权
    用于回收其上具有低k电介质材料的半导体晶片的组合物和方法

    公开(公告)号：US07960328B2

    公开(公告)日：2011-06-14

    申请号：US12093290

    申请日：2006-11-09

    申请人： Pamela M. Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  Mackenzie King

    发明人： Pamela M. Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  Mackenzie King

    IPC分类号： C11D7/32

    CPC分类号： C09K13/08 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/32134

    摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

    摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。

    DAMASCENE PROCESS HAVING RETAINED CAPPING LAYER THROUGH METALLIZATION FOR PROTECTING LOW-K DIELECTRICS
    30.
    发明申请
    DAMASCENE PROCESS HAVING RETAINED CAPPING LAYER THROUGH METALLIZATION FOR PROTECTING LOW-K DIELECTRICS 审中-公开
    通过用于保护低K电介质的金属化具有保留的覆盖层的大面积工艺

    公开(公告)号：US20080299718A1

    公开(公告)日：2008-12-04

    申请号：US11757147

    申请日：2007-06-01

    申请人： Ping Jiang ,  Deepak A. Ramappa

    发明人： Ping Jiang ,  Deepak A. Ramappa

    IPC分类号： H01L21/336 ,  H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L29/78

    摘要： A method of forming single or dual damascene interconnect structures using either a via-first or trench first approach includes the steps of providing a substrate surface having an etch-stop layer thereon, a low-k dielectric layer on the etch-stop layer, and a dielectric capping layer on the low-k dielectric layer. In the single damascene process using trench pattern, a trench is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the via-first process, using a via pattern, the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the trench first process, using the via pattern the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the single damascene or either via-first or trench-first dual damascene embodiment, the capping layer is retained over the low-k dielectric layer on top surfaces of the trench into the metal processing, generally including CMP processing, wherein the CMP process removes at least a portion, and in one embodiment the entire, capping layer.

    摘要翻译： 使用通孔或沟槽第一方法形成单个或双镶嵌互连结构的方法包括以下步骤：提供其上具有蚀刻停止层的衬底表面，蚀刻停止层上的低k电介质层，以及 在低k电介质层上的介电覆盖层。 在使用沟槽图案的单个镶嵌工艺中，通过覆盖层，低k电介质层和蚀刻停止层蚀刻沟槽以到达衬底表面。 在通孔第一工艺中，使用通孔图案，通过覆盖层，低k电介质层和蚀刻停止层蚀刻通孔以到达衬底表面。 在沟槽第一工艺中，使用通孔图案，通过覆盖层，低k电介质层和蚀刻停止层蚀刻通孔以到达衬底表面。 在单镶嵌或通过第一或第一沟槽的双镶嵌实施例中，覆盖层保留在沟槽顶表面上的低k介电层上，进入金属加工，通常包括CMP处理，其中CMP工艺移除 至少一部分，并且在一个实施方案中为整个封盖层。